A5048250662- Optical Network Technologies
- Photonic and Optical Devices
- Advanced Photonic Communication Systems
- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- Radiation Effects in Electronics
- Semiconductor materials and devices
- Semiconductor Lasers and Optical Devices
- Radiation Detection and Scintillator Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Photocathodes and Microchannel Plates
- Metal and Thin Film Mechanics
- Semiconductor Quantum Structures and Devices
- VLSI and Analog Circuit Testing
- Electron and X-Ray Spectroscopy Techniques
- Nuclear Physics and Applications
- Silicon Carbide Semiconductor Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Radiation Therapy and Dosimetry
- ZnO doping and properties
- Nanowire Synthesis and Applications
- Photonic Crystals and Applications
- Physical Unclonable Functions (PUFs) and Hardware Security
- Advanced Optical Sensing Technologies
- Particle Detector Development and Performance
CEA DAM Île-de-France
2004-2025
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2004-2025
Infinera (United States)
2005-2014
LFB (France)
2007-2014
Advanced Micro Devices (United States)
2004
The University of Texas at Austin
1997-2003
Nortel (Canada)
2001
Sorbonne Université
1982
100-Gb/s dense wavelength division multiplexed (DWDM) transmitter and receiver photonic integrated circuits (PICs) are demonstrated. The is realized through the integration of over 50 discrete functions onto a single monolithic InP chip. resultant DWDM PICs capable simultaneously transmitting receiving ten wavelengths at 10 Gb/s on grid. Optical system performance results across representative long-haul link presented for next-generation optical transport using these large-scale PICs. PIC...
We report the electrical and optical characteristics of avalanche photodiodes fabricated in GaN grown by metalorganic chemical vapor deposition. The current–voltage indicate a multiplication >25. Experiment indicates simulation verifies that magnitude electric field at onset gain is ⩾3 MV/cm. Small-area devices exhibit stable with no evidence microplasmas.
In this paper, the current state of art for large-scale InP photonic integrated circuits (PICs) is reviewed with a focus on devices and technologies that are driving commercial scaling highly devices. Specifically, performance, reliability, manufacturability 100-Gb/s dense wavelength-division-multiplexed transmitter receiver PICs as well next- future-generation (500 Gb/s beyond). The PIC enables significant reductions in cost, packaging complexity, size, fiber coupling, power consumption...
<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> The statistical transient response of floating body SOI and bulk devices is measured under proton heavy ion irradiation. influence the device architecture analyzed in detail for several generations technologies, from 0.25 <formula formulatype="inline"><tex>$\mu$</tex></formula>m to 70 nm. effects transients on SET sensitivity are investigated. amount collected charge shape currents shown have a...
The effect of proton energy on single-event latchup (SEL) in present-day SRAMs is investigated over a wide range energies and temperature. from five different vendors were irradiated at 20 to 500 MeV temperatures 25/spl deg/ 85/spl deg/C. For the radiation conditions examined this work, SEL thresholds varied as low high 490MeV. To gain insight into observed effects, heavy-ion linear transfer (LET) measured compared high-energy transport calculations interactions with materials. some that...
An overview of commercially available large-scale photonic integrated circuits (PICs) in indium phosphide is provided. Results 100-Gb/s PICs that are field-deployed wavelength-division-multiplexing (WDM) networks provided, along with development results showing scaling both channel count and bit rate to implement next-generation an aggregate capacity 1.6 Tb/s. Use PIC-enabled WDM systems allows affordable optical-electrical-optical (OEO) conversion the implementation "digital" optical...
We investigated the influence of modifying voltage an X-ray tube with a tungsten anode between 30 kV and 225 kV, therefore its photon energy spectrum (up to keV), on Total Ionizing Dose deposited in single-mode, phosphorus-doped optical fiber, already identified as promising dosimeter. Simulation data, obtained using toolchain combining SpekPy Geant4 software, are compared experimental results this radiosensitive fiber demonstrate increase dose operating voltage, at factor 4.5 while keeping...
Defects were observed in GaN:Mg grown on sapphire substrates using metal–organic chemical-vapor deposition (MOCVD) with Mg-delta doping similar to those previously bulk from Ga solution under high hydrostatic pressure of nitrogen. Pyramidal defects (pinholes) (11̄00) hexagonal facets the (0001) base plane and six {112̄2} side facets, a rectangular shape also delineated by planar basal planes, for growth polarity both these very different methods. The Mg dopant is apparently responsible their...
We report the growth, fabrication, and characterization of AlxGa1−xN (0⩽x⩽0.60) heteroepitaxial back-illuminated solar-blind p-i-n photodiodes on (0001) sapphire substrates. The group III-nitride layers are grown by low-pressure metalorganic chemical vapor deposition double polished substrates using various growth conditions. devices exhibit very low dark current densities. Furthermore, they external quantum efficiencies up to 35% at peak photoresponse (λ∼280 nm). Improvements were made...
A single-chip 40-channel dense wavelength division multiplexed, monolithic, InP transmitter photonic integrated circuit capable of operating at per channel data rate 40 Gbit/s for a combined 1.6 Tbit/s is demonstrated.
We report here the first demonstration of a large-scale monolithically integrated InP-based 10-channel 45.6-Gb/s per channel transmitter photonic circuit employing polarization-multiplexed differential quadrature phase-shift keying modulation format.
The discovery of the visible light-emitting diode (LED) 50 years ago by Holonyak and Bevacqua associated demonstration viability III-V semiconductor alloy created a foundational basis for field optoelectronics. Key advances which enabled progression from first LED to today's photonic integrated circuits (PICs) are described. Furthermore, current state-of-the-art 500-Gb/s 1-Tb/s large-scale InP transmitter receiver PICs their essential role in optical communications networks reviewed.
The neutron-induced SEU sensitivity in the 1-10 MeV energy range is investigated using monoenergetic neutron beams at 2.5, 4, 6, and 14 MeV. Below 0.25 mum technology node, bulk technologies exhibit a relatively high to neutrons between 4 6 which explained by contribution of alpha particles coming from (n, alpha) reactions. In terrestrial environment, SER this exceeds 10%.
We demonstrate a 10 wavelength, 200 GHz spaced, monolithically integrated, polarization-multiplexed, InP differential quadrature phase shift keying receiver operating at 45.6 Gb/s per wavelength. The is based on novel technique for polarization demodulation and tracking that does not require any external components.
In this paper, we review recent developments in the area of terabit/s class monolithically integrated, transmitter and receiver photonic integrated circuits for implementation coherent, polarization-multiplexed, quadrature phase shift keying higher order modulation formats.
Get PDF Email Share with Facebook Tweet This Post on reddit LinkedIn Add to CiteULike Mendeley BibSonomy Citation Copy Text R. Nagarajan, D. Lambert, M. Kato, V. Lal, G. Goldfarb, J. Rahn, Kuntz, Pleumeekers, A. Dentai, H. Tsai, Malendevich, Missey, K. Wu, Sun, McNicol, Tang, Zhang, T. Butrie, Nilsson, Reffle, F. Kish, and Welch, "10 Channel, 100Gbit/s per Dual Polarization, Coherent QPSK, Monolithic InP Receiver Photonic Integrated Circuit," in Optical Fiber Communication...
We have fabricated and investigated high-voltage GaN vertical Schottky-barrier rectifiers grown by metalorganic chemical vapor deposition. A mesageometry rectifier having a 5-μm-thick i region, processed using reactive-ion etching, exhibited reverse breakdown voltage of −450 V (at 10 mA/cm2) an on-resistance 23 mΩ cm2. For comparison, we also applied wet etching for the fabrication rectifiers. The 2-μm-thick i-region mesa-Schottky showed −310 −280 wet-etched dry-etched devices, respectively,...
We report the growth, fabrication and characterization of Al/sub 0.4/Ga/sub 0.6/N-Al/sub 0.6/Ga/sub 0.4/N back-illuminated, solar-blind p-i-n photodiodes. The peak responsivity photodiodes is 27 79 mA/W at /spl lambda//spl ap/280 nm for bias voltages 0 V -60 V, respectively, with a UV-to-visible rejection ratio more than three decades (at 400 nm). These devices exhibit very low dark current densities (/spl sim/5 nA/cm/sup 2/ -10 V). At frequencies, noise exhibits 1/f-type behavior. power...
<a href="http://www.osa-jon.org/virtual_issue.cfm?vid=28">Feature Issue on Nanoscale Integrated Photonics for Optical Networks</a> Dense wavelength division multiplexed (DWDM) large-scale, single-chip transmitter and receiver photonic integrated circuits (PICs), each capable of operating at 100 Gbits/s, have been deployed in the field since end 2004. These highly InP chips significantly changed economics long-haul optical transport networks. First, a review ten-channel, Gbits/s PIC is...
Get PDF Email Share with Facebook Tweet This Post on reddit LinkedIn Add to CiteULike Mendeley BibSonomy Citation Copy Text P. Evans, M. Fisher, R. Malendevich, A. James, Studenkov, G. Goldfarb, T. Vallaitis, Kato, Samra, S. Corzine, E. Strzelecka, Salvatore, F. Sedgwick, Kuntz, V. Lal, D. Lambert, Dentai, Pavinski, J. Zhang, B. Behnia, Bostak, Dominic, Nilsson, Taylor, Rahn, Sanders, H. Sun, K. -. Wu, Pleumeekers, Muthiah, Missey, Schneider, Stewart, Reffle, Butrie, Nagarajan, C. Joyner,...
We present a simulation-assisted methodology for the design of point or distributed fiber dosimeters exploiting linear dependence infrared radiation-induced attenuation single-mode phosphosilicate optical fiber. demonstrate by comparing Monte Carlo simulations and experiments at different irradiation facilities (X-rays, γ-rays, protons atmospheric neutrons) that sensitivity coefficient this is independent on nature particles dose rate, least up to total ionizing doses in order 500 Gy. Our...
This work investigates the sensitivity of bulk technologies in terrestrial neutron environment as a function technology scaling. Their is analyzed with both experiments and Monte Carlo simulations. The soft error rate (SER) future generations extrapolated, discussed on basis different parameters such interaction volume, secondary ion species incident energy ranges.