A5032791574- Graphene research and applications
- 2D Materials and Applications
- Surface and Thin Film Phenomena
- Advancements in Semiconductor Devices and Circuit Design
- Quantum and electron transport phenomena
- Conducting polymers and applications
- Analytical Chemistry and Sensors
- Nanowire Synthesis and Applications
- Diamond and Carbon-based Materials Research
- Carbon Nanotubes in Composites
- ZnO doping and properties
- Semiconductor materials and interfaces
- Semiconductor Quantum Structures and Devices
- Boron and Carbon Nanomaterials Research
- Transition Metal Oxide Nanomaterials
- Silicon Carbide Semiconductor Technologies
- Advanced Chemical Physics Studies
- Catalytic Processes in Materials Science
- Electron and X-Ray Spectroscopy Techniques
- Copper-based nanomaterials and applications
- Topological Materials and Phenomena
- Advanced Sensor and Energy Harvesting Materials
University of the Philippines Los Baños
2020-2022
T.K.M. College of Arts and Science
2021
Laguna Research
2021
Institut d'électronique de microélectronique et de nanotechnologie
2014-2016
Université de Lille
2014
École Centrale de Lille
2014
Centre National de la Recherche Scientifique
2014
Synchrotron soleil
2013
By mapping the low-energy electronic dynamics using angle resolved photoemission spectroscopy (ARPES), we have shed light on essential characteristics of (3 × 3) silicene phase Ag(111) surfaces. In particular, our results show a silicene-derived band with clear gap and linear energy-momentum dispersion near Fermi level at Γ symmetry point several distinctive Brillouin zones. Moreover, confirmed that large buckling ~0.7 Å this structure induces opening close to higher than least 0.3 eV, in...
Abstract The practical difficulties to use graphene in microelectronics and optoelectronics is that the available methods grow are not easily integrated mainstream technologies. A growth method could overcome at least some of these problems chemical vapour deposition (CVD) directly on semiconducting (Si or Ge) substrates. Here we report comparison CVD molecular beam epitaxy (MBE) technologically relevant Ge(001)/Si(001) substrate from ethene (C 2 H 4 ) precursor describe physical properties...
The interaction between the dopant and Cu atoms explains vacancy formation in doped Cu<sub>2</sub>O(111) surface.
2D boron nitride (2D-BN) was synthesized by gas-source molecular beam epitaxy on polycrystalline and monocrystalline Ni substrates using gaseous borazine active nitrogen generated a remote plasma source. The excess of atoms allows to overcome the thickness self-limitation when alone. nucleation density shape 2D-BN domains are clearly related substrate preparation growth parameters. Based spatially-resolved photoemission spectroscopy detection π plasmon peak, we discuss origin N1s B1s...
Abstract Hexagonal boron nitride (h-BN) was synthesized by molecular beam epitaxy on polycrystalline Ni foils using borazine (B 3 N H 6 ) as precursor. Our photoemission analysis shows that several components of and nitrogen are detected, suggesting the complex nature bonds noticeably at h-BN/Ni interface. The BN thickness estimated distribution time-of-flight secondary ion mass spectroscopy. Due to catalytic effect substrate, this is self-limited in range 1–2 layers regardless dose. A...
This paper deals with both DC and high frequency characterization of graphene devices, associated to compact electrical modelling. Pulsed I-V microwave several Graphene Field-Effect Transistor (GFET) generations fabricated on SiC substrates were investigated in order derive a first approach for non-linear device As illustrated here Nano Ribbon FET (GNR FET), model was presented accounting the HF characteristics broad range operating conditions. The differences between pulsed I–V...
This paper deals with both DC and high frequency characterization of graphene devices, associated to compact electrical modelling. Pulsed I-V microwave several Graphene Field-Effect Transistor (GFET) generations fabricated on SiC substrates were investigated in order derive a first approach for non-linear device As illustrated here Nano Ribbon FET (GNR FET), model was presented accounting the HF characteristics broad range operating conditions. The differences between pulsed...
Abstract New angle-resolved photoelectron spectroscopy (ARPES) data, recorded at several different photon energies from the Si(111)(7 × 7) surface, show that well-known S1 and S2 surface states lie in bulk band gap are localised specific (adatom rest atom) sites on reconstructed surface. The variations photoemission intensity these as a function of polar azimuthal emission angle, incident energy, not consistent with Fermi mapping but well-described by calculations multiple elastic scattering...
In this letter we present our work on top-gated graphene field-effect transistors GFET. The Transistors have been processed epitaxial synthesized the Si-face of a SiC substrate, using high-k dielectric Al <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> as gate oxide. order to reduce access resistance, chosed T-gate geometry. Hall mobility is 780 cm <sup...
Stable electronic configuration between the interface of an n-type oxide semiconductor core and a p-type polymer shell is necessary in order to guarantee consistent functioning core-shell structure. This research aims use silane-aniline link Titanium (IV) (TiO 2 ) polyaniline emeraldine salt (PANI-ES) shell. Core-shell structure was created by functionalizing TiO powders with silane aniline molecules using simple soaking technique then polymerizing attached oxidative technique. Infrared...