A5073982055- Electronic and Structural Properties of Oxides
- Magnetic and transport properties of perovskites and related materials
- Semiconductor Quantum Structures and Devices
- Ferroelectric and Piezoelectric Materials
- Advanced Condensed Matter Physics
- Quantum and electron transport phenomena
- Topological Materials and Phenomena
Jiangxi Science and Technology Normal University
2023-2024
Abstract Emergent phenomena such as two-dimensional electron gas (2DEG) and interfacial superconductivity ferromagnetism are generally built on the interface between insulating oxide thin films substrates, e.g., LaAlO 3 /SrTiO , where 2D profiles of these electronic states precisely confined at two insulators. Herein we report a high-mobility state with unusual symmetry Sr 2 CrMoO 6 (110) heterostructures, fermiology which follows cubic crystallographic rather than itself, resulting in...
Spin polarization of two-dimensional electron gas (2DEG) at the interface EuTiO3/SrTiO3(STO) heterostructures has been theoretical predicted and experimentally observed via x-ray magnetic circular dichroism polarized absorption spectroscopy, which, however, is lack magnetotransport evidence. Here, we report fabrication high-quality EuTiO3/STO by depositing antiferromagnetic insulating EuTiO3thin films onto STO substrates. Shubnikov-de Haas oscillation, Hall, magnetoresistance (MR)...
We report the synthesis of transition-metal-doped ferromagnetic elemental single-crystal semiconductors with quantum oscillations using physical vapor transport method. The 7.7 atom% Cr-doped Te crystals (Cr:Te) show ferromagnetism, butterfly-like negative magnetoresistance in low temperature (<3.8 K) and field (<0.15 T) region, high Hall mobility, e.g. 1320 cm2V-1s-1at 30 K 350 300 K, implying that Cr:Te are semiconductors. WhenB// [001] // I, maximum MR is ∼-27% atT= 20 andB= 8 T. In...