A5046985837- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- MXene and MAX Phase Materials
- Ferroelectric and Piezoelectric Materials
- Advanced Memory and Neural Computing
- ZnO doping and properties
- Advancements in Semiconductor Devices and Circuit Design
- Machine Learning in Materials Science
- Advanced materials and composites
- Advanced ceramic materials synthesis
- Molecular Junctions and Nanostructures
- Engineering Applied Research
- Force Microscopy Techniques and Applications
- Electronic and Structural Properties of Oxides
- Neuroscience and Neural Engineering
- Nanofabrication and Lithography Techniques
- Inorganic Chemistry and Materials
The University of Texas at Dallas
2020-2025
Kangwon National University
2022
Brookhaven National Laboratory
2022
Inha University
2022
Autonomous University of San Luis Potosí
2015-2017
A novel growth technique, called atomic partial layer deposition (APLD), has been proposed to expand the applications of, and research in, (ALD). This technique allows possibility for fabrication of well-controlled alloys on a single scale. To demonstrate capabilities this samples HfO2 TiO2 were prepared as conventional ALD nanolaminates through repeated exposure separated metal-precursor reactant. Subsequently, HfO2-TiO2 APLD mode obtained by varying precursor doses times obtain fractional...
Since the first report on unexpected ferroelectricity of fluorite‐structure oxides in 2011, this topic has provided a pathway for new research directions and opportunities. Based theoretical calculations experimental demonstrations, it is now well known that ferroelectrics are compatible with complementary metal–oxide–semiconductor technology exhibit ferroelectric properties at extremely thin (<10 nm) thicknesses. It should be noted noncentrosymmetric orthorhombic phase, which responsible...
Since the first report of ferroelectricity in fluorite structure oxides a decade ago, significant attention has been devoted to studying hafnia-based ferroelectric material systems due their promising properties and opportunities. To achieve such at low temperatures (below 400 °C), stabilizing metastable noncentrosymmetric orthorhombic phase is crucial. This review provides comprehensive overview atomic layer deposition (ALD) techniques for obtaining low-temperature applications. We discuss...
In this paper, we investigate the polarization retention of Hf0.5Zr0.5O2 (HZO)-based metal–ferroelectric–insulator–Si (MFIS) capacitors with scaling ferroelectric (FE) layer thickness from 5 nm to 20 nm. The have a constant interface capacitance ∼24 μF/cm2, developed due integration HZO on degenerated Si as bottom conducting electrode. It is observed that films show small change (∼5%) in FE (PFE) between short (10 μs) and long (6 s) time, while 5-nm-thick exhibit large difference (∼90%)....
Ferroelectric Hf0.5Zr0.5O2 (HZO) capacitors have been extensively explored for in-memory computing (IMC) applications due to their nonvolatility and back-end-of-line (BEOL) compatible process. Several IMC approaches using resistance capacitance states in ferroelectric HZO proposed vector-matrix multiplication (VMM), but previous suffer from limited accuracy reliability. In this work, we propose a promising approach centered on the remanent polarization (Pr) switching of binary capacitor...
The ferroelectricity of metal–ferroelectric–metal capacitors with a ferroelectric HfxZr1−xO2/ZrO2 (HZO/ZO) bilayer thicker than 20 nm formed by atomic layer deposition and postdeposition annealing at 600 °C was investigated. HZO/ZO exhibited higher remanent polarization (2Pr = Pr+ − Pr−) breakdown voltage (Vbd) HfxZr1−xO2 (HZO) single layer. In particular, HZO (15 nm)/ZO(10 nm) (HZ15Z10) capacitor excellent Vbd 2Pr values 6.7 V 14 μC/cm2, respectively, which are much those (4.3 10...
In this Letter, a high-pressure annealing (HPA) process is proposed as way to reduce the thermal budget of Hf0.5Zr0.5O2 (HZO) thin films with ferroelectric behaviors. The low-thermal-budget essential for integrating devices in back-end-of-line provide more functionalities and effective memory area. For HZO film annealed at 300 °C using HPA process, an orthorhombic phase responsible behavior was formed decrease thickness, resulting remanent polarization (Pr) ∼13 μC/cm2 (i.e., 2Pr ∼26 μC/cm2)....
In this article nickel interdigital capacitors were fabricated on top of silicon substrates. The capacitance the capacitor was optimized by coating electrodes with a 60 nm layer HfO2. An analytical solution compared to electromagnetic simulations using COMSOL and experimental measurements. Results show that modeling Finite Element Method software such as is effective in design electrical characterization these transducers.
The change in the interplanar spacing (d-spacing) including ferroelectric orthorhombic (O) phase low-temperature fabricated HfxZr1−xO2 (HZO) films was studied using synchrotron grazing-incidence wide-angle x-ray scattering analysis. 10-nm-thick HZO were by thermal and plasma-enhanced atomic layer deposition (TH- PE-ALD) methods H2O gas O2 plasma as oxidants, respectively, a post-metallization annealing (PMA) performed at 300–400 °C. d-spacing of mixture (111)-, (101)-, (111)-planes O,...
In this Letter, the robust ferroelectric properties of low-temperature (350 °C) Hf0.5Zr0.5O2 (HZO) films are investigated. We demonstrate that lower crystallization temperature HZO originates from a densified film deposition with an anhydrous H2O2 oxidant in atomic layer process. As consequence densification, H2O2-based showed completely crystallinity fewer defects at annealing 350 °C. This reduction additionally suppresses oxidation TiN electrodes, thereby improving device reliability. The...
Ferroelectricity in Hf0.5Zr0.5O2 (HZO) has garnered increasing interest due to its potential applications neuromorphic and nonvolatile memory devices. However, with time, the adverse shift coercive voltage (Vc) observed a prepoled HZO ferroelectric capacitor can lead insufficient polarization switching from one polarity owing development of built-in voltage, causing reliability concerns. Another consequence developed is relaxation, that is, rapid loss stored time (t < 6 s). In this work,...
We studied the ferroelectricity of metal–ferroelectric–metal capacitors with a Hf x Zr 1−x O 2 (10 nm) (HZO) single layer, and nm)/ZrO (HZO/ZO) nm)/HfO (HZO/HO) bi-layers. HZO/ZO HZO exhibited high remanent polarization (2 P r = + − ) 13 12 µC/cm , respectively, compared to HZO/HO (0.5 after 10 4 wake-up cycles. This is due difference amount ferroelectric orthorhombic phase. found that breakdown voltage was approximately 1.5 times higher than while maintaining value. Moreover, kept 1.4 value...
Self-assembled monolayers of 3-aminopropyltriethoxysilane (APTES) are commonly used to promote adhesion between substrates and organic or metallic materials with applications ranging from advanced composites biomolecular lab-on-a-chip devices. In this work, the silanization on hafnium oxide (HfO2) films is reported. The layers HfO2 were deposited Si (001) by atomic layer deposition. grown modified in accordance three main steps: oxidation, silanization, cross-linking APTES monolayer using...
In article number 2100028, Jiyoung Kim, Si Joon and co-workers comprehensively review the various factors such as doping effects, deposition method, annealing method conditions, substrate material for obtaining fluorite-structure ferroelectrics with low-thermal-budget processes (400 °C or less). These facilitate not only integration of ferroelectric circuits in back-end-of-line, but also applications to flexible wearable electronics.
Since HfO 2 ‐based ferroelectric films were reported in 2011, several doping/alloying elements have been introduced to secure interesting ferroelectric/antiferroelectric properties of Hf‐based fluorite‐structured thin films. Using a conventional approach by atomic layer deposition (ALD), an enormous number experiments would be required reveal the compositional effects components ternary and quaternary systems. Therefore, for comprehensive study Hf x Zr 1− O , novel combinatorial ALD...
In this letter, a threshold switching (TS) selector with Ag doping-based nano-polycrystalline ZnO layer (SL) having (002) preferred orientation has been manifested, without incorporating an active metal layer, using facile co-sputtering deposition technique. The TS selectors extremely controlled doping of ~0.14 at. % concentration showed remarkable electroforming (EF)-free selection behavior such as gigantic selectivity (~10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...
In this work, a nano-polycrystalline Ag-doped ZnO-based threshold switching (TS) selector via facile co-sputtering technique is investigated without using an Ag active metal layer. The effects of the concentration with respect to OFF-state leakage current (Ioff) were studied, and results demonstrate that by regulating doping in layer (SL), electroforming-free Ion/Ioff ratio ∼108 could be achieved, having extremely low Ioff value ∼10−13 A. Furthermore, cycling endurance can also improved as...
Hf x Zr 1−x O 2 (HZO) has been an attractive material for future ferroelectric memory devices because of their high scalability ~10 nm, stable ferroelectricity over a wide Hf:Zr composition range, and compatibility with CMOS manufacturing process. [1] Considering the device manufacturing, in thicker film region is required. However, it reported that HZO films generally degraded thick > 10 nm. [2] To obtain superior region, we pay attention to based structures (> 20 nm) paraelectric HfO...
Integrating the HfZrO 2 (HZO) on silicon have attracted attention of researches in development ferroelectric field effect transistor (FeFETs) for implementation high-density memories and neuromorphic devices[1][2]. In this work, it has been investigated thickness scalability HZO thin films reduction equivalent-oxide-thickness (EOT) Silicon using [(CH 3 ) N] 4 Hf Zr as precursor H O oxidants by means atomic layer deposition. A TiN/HZO/Si structure was fabricated where Si substrate prepared...
Ferroelectrics have retrieved great interest since the discovery of a ferroelectric phase in HfO 2 . 1 Especially, Hf 0.5 Zr O (HZO) thin films studied for application as non-volatile memory and field-effect transistor, due to their high scalability compatibility with CMOS process. In our previous work, we achieved low thermal budget process (400 °C) by controlling tensile stress from TiN electrode during annealing 3 Moreover, can act barrier layer against hydrogen diffusion, therefore, HZO...