A5022228492- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- Semiconductor materials and interfaces
- Copper-based nanomaterials and applications
- Advanced Semiconductor Detectors and Materials
- Electron and X-Ray Spectroscopy Techniques
- Silicon and Solar Cell Technologies
- Crystal Structures and Properties
- Electrochemical Analysis and Applications
- ZnO doping and properties
Helmholtz-Zentrum Berlin für Materialien und Energie
2011-2018
Photoluminescence (PL) is commonly used for investigations of Cu2ZnSnS(e)4 [CZTS(e)] and Cu(In,Ga)Se2 (CIGS) thin film solar cells. The influence interference effects on these measurements is, however, largely overlooked in the community. Here, it demonstrated that PL spectra typical CZTS absorbers Mo/glass substrates can be heavily distorted by effects. One reason pronounced low reabsorption emission typically occurs below band gap. A similar situation gap graded CIGS where originates...
Defect states in Cu2ZnSn(SxSe1−x)4 thin films with x = 0.28, 0.36, and 1 were studied by combining photoluminescence (PL) modulated surface photovoltage (SPV) spectroscopy. A single broad band emission the PL spectra was observed can be related to quasi-donor-acceptor pair transitions. The analysis of temperature dependent quenching (x 1) SPV 0.28) signals resulted activation energies below 150 meV for about 90 300 SPV. Possible intrinsic point defects that might associated these are discussed.
Photoluminescence imaging as well quantitative photoluminescence spectroscopy has been successfully applied to different solar cell materials, such crystalline silicon and polycrystalline Cu(In, Ga)Se <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> . These methods can be used investigate spatial inhomogeneities, for the contactless determination of quasi-Fermi level splittings, which are related open-circuit voltage in finished...
The influence of composition on the quaternary Cu <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ZnSnS xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> (CZTS) absorber material secondary phase content, recombination characteristics and solar cell performance is investigated. Best efficiencies are found in a very narrow Cu-poor, Zn-rich range. Photoluminescence measurements performed at 12 K indicate strong compensation for Cu-poor...
We investigate the dominant recombination process in CZTS thin film absorber layers by time-resolved and steady state photoluminescence spectroscopy at low temperatures. show that emission peak temperatures shifts monotonically over many orders of magnitude excitation power, which is inconsistent with electrostatic potential fluctuations causing this behavior. Time-resolved 7 K shows very long times, are consistent donor-acceptor pair involving acceptors densities mid 10 <sup...