A5074647017- Rare-earth and actinide compounds
- Phase-change materials and chalcogenides
- Magnetic properties of thin films
- Integrated Circuits and Semiconductor Failure Analysis
- Topological Materials and Phenomena
- Quantum Computing Algorithms and Architecture
- Quasicrystal Structures and Properties
- Silicon Carbide Semiconductor Technologies
- Theoretical and Computational Physics
- Semiconductor materials and devices
- Advanced Condensed Matter Physics
- Nuclear Materials and Properties
National High Magnetic Field Laboratory
2023-2025
Florida State University
2023-2025
National Technical University of Athens
2019
Abstract A 6H‐SiC single crystal implanted in channeling mode by 4‐MeV C +3 and Si ions at various doping levels has been examined scanning electron microscopy (SEM) micro‐Raman spectroscopy order to study the lattice distortions inflicted impinging ions. create zones of strongly damaged regions, parallel front face wafer with width increasing amount doping. As expected, induced considerably more than C, one magnitude less induces apparently same effect as C. Despite large laser spot size...
Giant magnetoresistance (GMR) in bulk nonmagnetic compounds has received considerable attention since this phenomenon challenged the classical understanding of electron transport under a magnetic field. Here, we report magnetotransport properties diamagnetic intermetallic compound ${\mathrm{YCd}}_{6}$ for applied fields up to 35 T and temperatures down 0.4 K that reveal GMR. We argue large MR value can be explained terms field-induced pseudogaps on Fermi surface. These results are relevant...