A5055952671- Radiation Effects in Electronics
- Semiconductor materials and devices
- Advanced Semiconductor Detectors and Materials
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- CCD and CMOS Imaging Sensors
- Radiation Detection and Scintillator Technologies
- VLSI and Analog Circuit Testing
- Electrostatic Discharge in Electronics
- Advanced Memory and Neural Computing
- Particle Detector Development and Performance
- Advancements in PLL and VCO Technologies
- Medical Imaging Techniques and Applications
- Advanced X-ray and CT Imaging
- Analog and Mixed-Signal Circuit Design
- Nuclear Physics and Applications
- Electronic and Structural Properties of Oxides
- Infrared Target Detection Methodologies
- Low-power high-performance VLSI design
- Energy Harvesting in Wireless Networks
- Radio Frequency Integrated Circuit Design
- DNA and Biological Computing
- User Authentication and Security Systems
- Electromagnetic Launch and Propulsion Technology
- Molecular Communication and Nanonetworks
Graz University of Technology
2016-2024
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2010-2021
CEA Paris-Saclay
2011-2021
Institut de Recherche sur les Lois Fondamentales de l'Univers
2010-2021
Université Paris-Saclay
2021
Abstract Objective. The efficient usage of prompt photons like Cherenkov emission is great interest for the design next generation, cost-effective, and ultra-high-sensitivity time-of-flight positron tomography (TOF-PET) scanners. With custom, high power consuming, readout electronics fast digitization prospect sub-300 ps FWHM with PET-sized BGO crystals have been shown. However, these results are not scalable to a full system consisting thousands detector elements. Approach. To pave way...
Since few years, our group is developing a family of ASICs for space applications, named IDeF-X Imaging Detector Front-end. HD the new member family. It has been optimized readout 16 x pixels CdTe or CdZnTe pixelated detectors to build low power Caliste 256 module. This micro gamma-camera will be elementary unit MAC SI (Modular Assembly Spectro Imager) camera: A 2048-pixels 8 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> gamma...
Caliste HD is the last member of family Cd(Zn)Te micro-cameras for space applications. This hybrid component made assembly one 16 × pixel detector and eight analog front-end ASIC named IDeF-X equipped with 32 spectroscopic channels. The pixels are 625 μm pitch surrounded by a 20 wide guard ring. new generation has advantage having power consumption 4 times lower as previous version (0.2 W full device) offers possibility to extend dynamic range from 250 keV 1 MeV. technology fully compliant...
Space agencies worldwide have a long-term vision of sending human missions to Mars <xref ref-type="bibr" rid="ref1" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">[1]</xref> . The next favorable launch window occurs in 2033, and plans are ongoing realize such endeavors. An essential part this preparation is the search for new technologies mitigate mission performance risks. A critical further technological advancement passive or batteryless wireless...
The reliability of electronics in the proximity ionizing radiation is a key requirement particular high energy physics, nuclear power or space applications. One way to improve robustness MOS transistors operating such environments use enclosed layout techniques. This special approach helps maintain leakage current at low level even after irradiation, contrast linear transistor, where could increase by orders magnitude. issue, arising with transistors, related channel modelling, since...
This paper describes a 16 × pixels CdTe-based X-ray detector named dimension 2 revision 1 (D <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> R <sub xmlns:xlink="http://www.w3.org/1999/xlink">1</sub> ) with pixel size of 300 μm×300 μm. An application-specific integrated circuit (ASIC) is interconnected to CdTe by means an indium gold stud bonding process. ASIC has mean equivalent noise charge 29 el.rms (at 0 pF). The combination low...
IDeF-X HD is a 32-channel analog front-end with self-triggering capability optimized for the readout of [Formula: see text] pixels CdTe or CdZnTe pixelated detectors to build low power micro-gamma camera. has been designed in standard AMS CMOS 0.35[Formula: text][Formula: text]m process technology. Its consumption 800[Formula: text]W per channel. The energy range ASIC can be extended 1.1[Formula: text]MeV thanks in-channel adjustable gain stage. When no detector connected chip and without...
The Random Telegraph Noise (RTN) is one of the major reliability concerns in nanoscale CMOS technologies. In this paper, we discuss characterization RTN 40 nm technology using Ring Oscillators (ROSCs). We used two different types ROSCs to study temporal and spectral characteristics RTN. With work, analyse suitability ROSC for on chip statistical analysis amplitude strength its frequency characteristics. Already preliminary results, without complete coverage show $\triangle$f/$f_{max}$...
Enclosed layout is an effective way to mitigate radiation induced leakage current in NMOS transistors. The unconventional shape of such device makes modeling a challenging task. Evaluation equivalent aspect ratio estimation complicated by additional stress effects, as STI stress. We incorporate the effect into simulation for enclosed transistor order evaluate accuracy two evaluation models: well-known mid-line approximation and recently introduced isosceles trapezoid approximation.
Comparison of continuous time and discrete noise filtering is presented. Two sets measurements have been performed: one with the classical analog semi-Gaussian shaper (CR-RC <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ), other M-CDS (Multi-Correlated Double Sampling). The Charge Sensitive Amplifier used in optimized for input capacitance 1 pF detector dark current below 5 pA. With Equivalent Noise characterized as a function peaking...
Total ionizing dose effects on transistors, fabricated in 0.18 μm CMOS technology are investigated. Radiation induced changes NMOS and PMOS transistors parameters discussed. narrow channel effect (RINCE) is demonstrated. Degree of influence the bias conditions radiation response given process shown. Finally, impact devices electrical characteristics change hard design as well outlook further investigation activities
Abstract In this paper, we explore the transitions of low-frequency noise characteristics in high-k metal-gate bulk CMOS transistors induced by Total Ionizing Dose (TID). Due to strong bias dependence characteristics, differentiating between shifts caused effective biasing change and contribution newly generated traps becomes extremely challenging. order better understand effects irradiation, transistor had be characterized at several points, both linear saturation regions, before after...
Presented work is dedicated to research on pixelated CdTe spectro-imaging systems for space applications. The current study focused charge amplifier optimization low dark (less than 5 pA) and input capacitance (0.3 1 pF) detector front-end. High spatial resolution minimized power consumption are the most important parameters. Previous studies considered pixel size of approximately 600 μm. With technological advance packaging development, stray between electronics can be reduced. Consequently...