A5043110247- ZnO doping and properties
- Semiconductor materials and devices
- Chalcogenide Semiconductor Thin Films
- 2D Materials and Applications
- Quantum Dots Synthesis And Properties
- Metal and Thin Film Mechanics
- Copper Interconnects and Reliability
- Advanced Sensor and Energy Harvesting Materials
- Conducting polymers and applications
- Perovskite Materials and Applications
- Electronic and Structural Properties of Oxides
- Advanced Memory and Neural Computing
- Fuel Cells and Related Materials
- Acoustic Wave Resonator Technologies
- Copper-based nanomaterials and applications
- Gas Sensing Nanomaterials and Sensors
- Transition Metal Oxide Nanomaterials
- Surface Modification and Superhydrophobicity
- Diamond and Carbon-based Materials Research
- Advanced Photocatalysis Techniques
- MXene and MAX Phase Materials
- Advanced Materials and Mechanics
- Innovative Energy Harvesting Technologies
- Thin-Film Transistor Technologies
- Photonic and Optical Devices
Hanyang University
2003-2024
Korea University
2021-2022
Tin monosulfide (SnS) is a promising p-type semiconductor material for energy devices. To realize the device application of SnS, studies on process improvement and film characteristics SnS needed. Thus, we developed new using atomic layer deposition (ALD) to produce films with high quality various characteristics. First, obtaining thick was studied. An amorphous SnS2 (a-SnS2) growth rate deposited by ALD, obtained phase transition a-SnS2 vacuum annealing. Subsequently, investigated effect...
In this work, we report on the layered deposition of few-layer tin disulfide (SnS2) using atomic layer (ALD). By varying ALD cycles it was possible to deposit poly-crystalline SnS2 with small variation in numbers. Based technique, developed process technology growing crystalline film (3-6 layers) and investigated their electrical properties by fabricating bottom-gated thin transistors as transport channel. devices showed typical n-type characteristic on/off current ratio ∼8.32 × 106,...
We researched the reduction of leakage current by Al doping in TiO2 thin film. During film deposition process, Al2O3 was used for doping. XPS analysis showed that greater amount film, fewer oxygen vacancies were found. The n-type characteristic films is reduced as are reduced. An anatase (211) peak detected GIXRD analysis, and crystallinity with doping; full width half maximum crystalline size UV-visible energy bandgap increased became smaller, I-V measurements density decreased to 3 × 10−4...
Despite increasing interest in tin disulfide (SnS2) as a two-dimensional (2D) material due to its promising electrical and optical properties, the surface treatment of silicon dioxide (SiO2) substrates prior atomic layer deposition (ALD) SnS2 has not been thoroughly studied. In this paper, we prepared two types SiO2 with without using an O2 plasma compared ALD growth behavior on substrates. The hydrophilic properties were investigated by x-ray photoelectron spectroscopy contact angle...
Abstract Multilayer tin oxide/gold/tin oxide (SnO 2 /Au/SnO ) was deposited by atomic layer deposition and an e-beam evaporator. The structural, electrical, optical properties of the SnO multilayer were investigated. Au formed islands at a thickness less than 3 nm. As interlayer increased, merged, resulting in continuous film 12 nm thick. increased from 0 to nm, carrier concentration Hall mobility 2.41 × 10 22 cm −3 11.96 V −1 s , respectively. result, resistivity decreased −5 Ω with...
Tin disulfide (SnS2) has emerged as a promising two-dimensional (2D) material due to its excellent electrical and optical properties. However, research into 2D SnS2 mainly focused on synthesis procedures applications; stability humidity temperature yet be studied. In this work, thin films were grown by atomic layer deposition (ALD) characterized various tools, such x-ray diffraction, Raman analysis, transmission electron spectroscopy. Characterization reveals that ALD-grown are high-quality...
We study the rutile-TiO2film deposition with a high-kvalue using SnO2seed layer and low temperature heat treatment. Generally, treatment over 600 °C is required to obtain rutile-TiO2film. However, By layer, we obtained rutile-TiO2films treatments as 400 °C. The XPS analysis confirms that SnO2and TiO2film were deposited. XRD showed at after depositing TiO2films was effective in obtaining when SnO2film thicker than 10 nm. TEM/EDX show no diffusion thin film between TiO2and SnO2. dielectric...
Two-dimensional tin disulfide (SnS2) is attracting attention from researchers in various fields due to its physical, optical, and electrical properties. In addition, research suggests that SnS2 doped with metals can be used a wide range of applications. However, few studies the doping process sulfide thin films concentrations using atomic layer deposition (ALD) super-cycle method have been published. Here, we describe pristine ALD analyze crystallinity, chemistry, optical properties zinc by...
Silicon oxycarbide (SiOC) film was etched using a CF 4 /C 6 F 12 O/O 2 mixed gas plasma through an inductively coupled etcher. Changes in the dielectric constant and surface chemical bonding properties were investigated ellipsometry Fourier transform infrared spectroscopy. Plasma diagnosis carried out double Langmuir probe, ultraviolet detector, residual analyzer. The physical of CHF 3 C O exhibited similar trends. However, smaller change compared to that conventional plasma, because lower...
In this work, we studied the etch characteristics and dielectric constant change of SiOC thin films by plasma etching for fabrication nanoscale devices to evaluate C 5 H 2 F 10 as alternative gas. We performed with inductively coupled using CF 4 +X+O mixed gas, where X = CHF 3 . Plasma diagnosis such optical emission spectroscopy double Langmuir probe measurements were carried. analyzed chemical compositions residues on etched film surface X-ray photoelectron spectroscopy. After process,...
Summary form only given. Surface modification of deformed steel bar was done with plasma nitriding technology to improve the corrosion resistance. In this experiment, pulsed DC plasmas were used various processing parameters such as pressure, time, temperature, gas compositions, etc. It found that compound layers can be obtained depending on carefully selected parameters. The depth diffusion measured up several hundred micrometers. resistance nitrided steels evaluated a tester which measures...