A5014678572- Photonic and Optical Devices
- Nanowire Synthesis and Applications
- Gas Sensing Nanomaterials and Sensors
- Semiconductor Quantum Structures and Devices
- ZnO doping and properties
- Semiconductor Lasers and Optical Devices
- Photonic Crystals and Applications
- Analytical Chemistry and Sensors
- Ga2O3 and related materials
- Nanomaterials and Printing Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor materials and devices
- Acoustic Wave Resonator Technologies
- Advanced Sensor and Energy Harvesting Materials
- Copper-based nanomaterials and applications
- Mechanical and Optical Resonators
- Graphene research and applications
- GaN-based semiconductor devices and materials
- Plasmonic and Surface Plasmon Research
- Advancements in Semiconductor Devices and Circuit Design
- Transition Metal Oxide Nanomaterials
- Perovskite Materials and Applications
Moscow Institute of Physics and Technology
2022-2023
St Petersburg University
2020-2022
Saint Petersburg Academic University
2020
Nanowires represent numerous opportunities for nanoelectronics and sensorics, while metal contact fabrication makes the device development rather challenging. Here, we demonstrate that silicon (Si) nanowires deposited on interdigital contacts via simple drop casting exhibit an abrupt increase in conductivity upon exposure to ammonia vapors aqueous solutions due adsorption of analyte species. To reduce noise DC resistance measurements lacking ohmic conductivity, exploit electronic impedance...
Abstract Emerging technologies for integrated optical circuits demand novel approaches and materials. This includes a search nanoscale waveguides that should satisfy criteria of high density, small cross‐section, technological feasibility structural perfection. All these are met with self‐assembled gallium phosphide (GaP) epitaxial nanowires. In this work, the effects nanowire geometry on their waveguiding properties studied both experimentally numerically. Cut‐off wavelength dependence...
This work is aimed at the development of a highly sensitive silicon (Si)-based sensor allowing for selective detection and analysis liquid solution compositions containing ammonia (NH3) hydrochloric acid (HCl) in an indirect manner using electrochemical impedance spectroscopy (EIS). For optimization performance, we develop three types sensors based on as-fabricated Si nanowires, nanowires treated with hydrofluoric (HF), decorated silver (Ag) nanoparticles. The fabricated exhibit good...
Zinc oxide (ZnO) nanostructures are widely used in various fields of science and technology due to their properties ease fabrication. To achieve the desired characteristics for subsequent device application, it is necessary develop growth methods allowing control over nanostructures' morphology crystallinity governing optical electronic properties. In this work, we grow ZnO via hydrothermal synthesis using surfactants that significantly affect kinetics. Nanostructures with geometry from...
An InAs/InGaAs quantum dot laser with a heterostructure epitaxially grown on silicon substrate was used to fabricate injection microdisk lasers of different diameters (15–31 µm). A post-growth process includes photolithography and deep dry etching. No surface protection/passivation is applied. The microlasers are capable operating heatsink-free in continuous-wave regime at room elevated temperatures. record-low threshold current density 0.36 kA/cm2 achieved 31 µm diameter microdisks...
We discuss the effect of self-heating on performance injection microdisk lasers operating in continuous-wave (CW) regime at room and elevated temperature. A model is developed that allows one to obtain analytical expressions for peak optical power limited by thermal rollover effect, corresponding current excess temperature device. The predicts, there exists maximum microlaser operation CW minimum mircrodisk diameter, which lasing possible. determine dependence device characteristics its...
Effects promoted by a Ga optical nanoantenna on self-assembled GaP nanowires including field confinement, enhanced internal reflection and antenna effect are explored. The perspectives for nanophotonic emitters, waveguides couplers discussed.
The development of novel nanophotonic devices and circuits necessitates studies optical phenomena in nanoscale structures. Catalyzed semiconductor nanowires are known for their unique properties including high crystallinity silicon compatibility making them the perfect platform optoelectronics nanophotonics. In this work, we explore numerically gallium phosphide governed by dimensions study waveguiding, coupling between two wires resonant field confinement to unveil paving way fabrication...
Abstract In this work we study zinc oxide nanostructures of various geometries synthesized via the hydrothermal technique on Si (111) substrate. We demonstrate capabilities growth protocol for control over morphology varying from nanowires to hexapods. The obtained samples were studied by photoluminescence spectroscopy a very narrow spontaneous emission near 370 nm. Despite cheap and feasible fabrication, possess high crystallinity confirmed absence typical ZnO wide band in visible region,...
Abstract Currently, new nanostructured materials based on composite metal oxides is of great interest for the development gas sensors with improved functional characteristics. In this work, zinc oxide nanowires were synthesized by hydrothermal method. Hierarchical ZnO/ZnFe 2 O 4 nanostructures obtained immersion layers in ferrous sulphate aqueous solution. The mechanism ferrite formation during interaction iron considered. crystal structure ZnO and studied Raman spectroscopy. sensitivity to...
In this work we study zinc oxide nanostructures of various geometries synthesized via hydrothermal technique on Si (111) substrate. We demonstrate capabilities the growth protocol for control over morphology varying from nanowires to hexapods. The obtained samples are studied by photoluminescence spectroscopy a very narrow spontaneous emission band near 370 nm. Despite cheap and feasible fabrication, possess high crystallinity confirmed absence typical ZnO wide in visible region related with...
Abstract We studied a far-field emission pattern for microlasers with InGaAs/GaAs quantum well-dots in the active region. Angular-resolved electroluminescence spectra measurement revealed various patterns depending on current and resonance mode.
Abstract We present an analysis of spectral and threshold characteristics InGaAs/GaAs quantum well-dot microdisk laser operated under cw current injection at room temperature without external cooling. The experimental values the for disk ring microlasers are compared. observe that can be significantly decreased in devices with large diameters (more than 30 μm) by using geometry.