A5101405854- Advanced DC-DC Converters
- Silicon Carbide Semiconductor Technologies
- Multilevel Inverters and Converters
- Advanced Computational Techniques and Applications
- Solid State Laser Technologies
- Photonic Crystals and Applications
- Metamaterials and Metasurfaces Applications
- Geographic Information Systems Studies
- Advanced Sensor and Control Systems
- Advanced Fiber Laser Technologies
- Advanced Antenna and Metasurface Technologies
- Microgrid Control and Optimization
- Photorefractive and Nonlinear Optics
- Terahertz technology and applications
- Photonic and Optical Devices
- Wireless Power Transfer Systems
- GaN-based semiconductor devices and materials
- Advanced SAR Imaging Techniques
- Medical Imaging Techniques and Applications
- Web Applications and Data Management
- Remote Sensing and Land Use
- GNSS positioning and interference
- Acoustic Wave Resonator Technologies
- Folklore, Mythology, and Literature Studies
- Medical Image Segmentation Techniques
Tianjin University
2014-2024
Northeastern University
2023-2024
Hubei Urban Construction Vocational and Technological College
2024
Zhejiang University
2002-2022
Oklahoma State University
2016
Ministry of Education of the People's Republic of China
2012-2014
Henan Agricultural University
2007-2012
Southeast University
2012
Anyang Normal University
2012
Guangdong University Of Finances and Economics
2011
Download This Paper Open PDF in Browser Add to My Library Share: Permalink Using these links will ensure access this page indefinitely Copy URL DOI
Gallium nitride high electron mobility transistor has been seen as a power semiconductor devices with lots of potential since it commercialized. However, the advantages fast switching speed low conduction resistance always have to compromise on evoked overvoltage. Though realized that overvoltage problem arises from joint effect switch and parasitics, there is lack ways for quantitative analysis. This paper proposes reliable circuit model based way analyze cause finds optimized parameters...
<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">LCC</i> resonant converters have been widely adopted to achieve high power density and efficiency. Due switching frequency large reactive in the tank, efficiency of at light load decreases dramatically. Burst mode, which is commonly used dc–dc improve load, has not applied due oscillation tank during burst <sc xmlns:xlink="http://www.w3.org/1999/xlink">off</small> -time mode. In this article, a...
This work is about the development of a temperature-dependent driving strategy for power transistors, aimed at counterbalancing temperature related increases in their on-state resistance and losses by corresponding increase amplitude applied signal. The concept first demonstrated on example PowerMOSFET, based semiconductor theory circuit simulations employing electro-thermal device models; then, experimental results obtained prototype novel are presented. These well demonstrate effectiveness...
This article has presented a unified electrothermal behavior modeling method for both silicon carbide (SiC) metal oxide semiconductor field effect transistor ( <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small> ) and gallium nitride (GaN) high electron mobility (HEMT). The electrothemal of these two kind devices in the first third quadrant is accurately modeled with serval compact equations. A data optimization algorithm-based...
Parasitic capacitances of silicon carbide (SiC) MOSFET exert an significant influence on the switching performance with direct determination speed, loss and EMI noises, among which nonlinear gate drain capacitance (Miller capacitance) dominates due to well-known Miller effect. A precise comprehensive model miller is proposed according structure SiC DMOSFET at a physical level. Comparing traditional "switch model" SIEMENS, more compact less parameters while keeps merit precision. The detailed...
Here we propose an efficient diode-end-pumped actively Q-switched 1176-nm Nd:YAG/Nd:YVO4 hybrid gain intracavity Raman laser. By virtue of the construction a coaxial double crystal, laser not only can operate efficiently at low pulse repetition frequencies (PRFs), thereby realizing relatively high-energy and high-peak-power pulsed output, but also is capable generating high average output power PRFs. A maximum energy 0.54 mJ for Stokes light achieved PRF 10 kHz, up to 9.80 W obtained 100...
LCC resonant converters have been widely adopted in pulse-modulated high-voltage generators to achieve high power density and efficiency, which require a short rising time of output voltage. However, if the converter starts up too fast, voltage and/or current stresses tank during startup may be several times higher than those steady state due complex dynamic behavior tank. In this article, simplified model is first introduced. Then, optimal trajectory control (OTC) proposed optimize...
Fast and accurate optimization of the dynamic response is very important for an <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">LCC</i> resonant converter. The trajectory control effective way to achieve these goals. However, model converter generally too complex get target steady-state operation frequency online in real time with common controllers. In this article, a fast solution can be obtained by adopting proposed two-point method. A...
Photonic heterostructure has recently become a promising platform to study topological photonics with the introduction of mode width degree freedom (DOF). However, there is still lack comprehensive analysis on coupling dipole emitters in photonic heterostructures, which constrains development on-chip quantum optics based chiral sources. We systematically analyze unidirectional mechanism between and valley waveguides (VPHWs). With eigenmode calculations full-wave simulations, Stokes...
Gallium nitride high electron mobility transistor (GaN HEMT) is liable to gate false turn-on problem when the crosstalk voltage exceeds its threshold in widely adopted phase-leg topology due low and switching speed. Without considering loop stray inductance, internal resistance, nonlinearity of parasitic capacitances power parameters, traditional analytical method insufficient support accurate analysis. And it has been found that GaN HEMT gate-source capacitance C <sub...
The dielectric constant of potassium tantalate (KTaO3) single crystals at 0.1-0.8 THz is modulated by 532nm continuous-wave laser room temperature. decreases with the increasing power, especially real part, which 3.5% when power 600mW. This property KTaO3 crystal attributed to its soft-mode hardening due anharmonic character potential. It also found that refractive index linearly interpreted as linear electro-optic effect induced internal space charge field crystal.
Tuning the dielectric permittivity spectra of strontium titanate (SrTiO3) single crystals in an external optical field is investigated at room temperature by means terahertz time-domain spectroscopy. The application leads to appreciable tuning permittivity, reaching up 2.8%, with loss changing about 3%. observed behavior interpreted terms soft-mode hardening due anharmonic character its potential. We also find that change refractive index responds linearly applied light power. These findings...
For high-frequency high-current low-voltage applications, planar matrix transformer for unregulated LLC converter has been adopted to achieve high power density and efficiency. Compared converter, the phase shift between primary current secondary of is larger in regulated as a result lower magnetising inductance. Thus, conventional winding loss model not applicable converter. Aiming at this problem, an accurately dc resistance analytic ac are proposed study calculate transformer. In...
Traditional Si devices are gradually replaced with SiC due to their fast switching speed, low on-resistance and high thermal conductivity. However, the faster lower negative voltage threshold gate of MOSFET make application is more sensitive crosstalk among circuit, e.g. upper devices, which significantly limits speed reliability applications MOSFETs. In this paper, typical three kinds sources (dv/dt, di/dt oscillation in power loop) two conductive paths (Miller capacitance common source...
With high frequency switching, accuracy sampling, and high-precision compensation algorithm can be achieved easily, which makes output current more accurate. To achieve the fast accurate response of active power filter(APF) current, a novel control strategy combining PI repetitive with short sampling time was proposed. Performance harmonics by proposed method is investigated in simulation performed range to 50th order (2.5 kHz) harmonics, system respond quickly while load change. The result...
A giant terahertz modulation based on a Ba0.6 Sr0.4 TiO3 -silicon hybrid metamaterial is reported by L. Wu, W. Zhang, and co-workers page 2610. The proposed nanoscale (BST) metamaterial, delivering transmission contrast of up to ≈79% due electrically enabled carrier transport between the ferroelectric thin film silicon substrate, promising in developing high-performance real world photonic devices for technology.
We proposed and experimentally demonstrated the generation of high-power 1176 nm Stokes wave by frequency shifting a 885 diode-side-pumped Nd:YAG laser using YVO4 crystal in Z-shaped cavity configuration. Employing scheme cavity, for first time to our knowledge, we realized thermal management effectively, achieving excellent consequently. With an incident pump power ~190.0 W, maximum average output 16.7 W was obtained at pulse repetition 10 kHz. The duration spectrum linewidth were 20.3 ns...
Gallium nitride (GaN) high-electron-mobility transistor (HEMT) with the merits of fast switch speed, low on resistance and loss is applicable to high-frequency LLC converters. However, voltage stress ringing problems during switching transient have retarded promotion speed prolonged design cycles. This study proposed an economic time-saving virtual prototype based converter method, which problem can be analysed suppressed by iteration design. The comprises compact GaN HEMT device model...
Fast turn-on transition induced overvoltage between the drain and source of opposite device in a SiC MOSFET phase-leg is investigated. A simplified but effective model considering parasitic inductances, stray resistances, device's junction capacitances proposed to study transient MOSFETs. The factors that determine complementary are then derived, which basis designing snubber circuit suppress it. Moreover, small signal investigate effects capacitors on resonance based frequency-domain...
We propose a design and numerical study of an optically blueshift redshift switchable metamaterial (MM) absorber in the terahertz regime. The MM comprises periodic array metallic split-ring resonators (SRRs) with semiconductor silicon embedded gaps resonators. absorptive frequencies can be shifted by applying external pump power. simulation results show that, for photoconductivity ranging between 1 S/m 4000 S/m, resonance peak absorption spectra shifts to higher frequencies, from 0.67 THz...