A5031441337- solar cell performance optimization
- Silicon and Solar Cell Technologies
- Chalcogenide Semiconductor Thin Films
- Semiconductor materials and interfaces
- Thin-Film Transistor Technologies
- Nanowire Synthesis and Applications
- Quantum Dots Synthesis And Properties
- Semiconductor Quantum Structures and Devices
- 3D IC and TSV technologies
- Semiconductor materials and devices
- Perovskite Materials and Applications
- Carbon Nanotubes in Composites
- Copper-based nanomaterials and applications
- Silicon Nanostructures and Photoluminescence
- Regional Development and Policy
- Education in Diverse Contexts
- Chemical and Physical Properties of Materials
- Radiation Detection and Scintillator Technologies
- European Socioeconomic and Political Studies
- Photonic and Optical Devices
- Electronic Packaging and Soldering Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Sensor Technology and Measurement Systems
- Organic Light-Emitting Diodes Research
- Polish socio-economic development
University of Stuttgart
2022-2023
Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg
2020
National Renewable Energy Laboratory
2015-2019
Sol Voltaics (Sweden)
2018
École Polytechnique Fédérale de Lausanne
2016-2018
Fraunhofer Institute for Solar Energy Systems
2012-2015
Institute of Geography and Spatial Organization, Polish Academy of Sciences
2014
Austrian Institute of Spatial Planning
2014
Nordregio
2014
Fraunhofer Society
2012-2013
Development of new device architectures and process technologies is tremendous interest in crystalline silicon (c-Si) photovoltaics to drive enhanced performance and/or reduced processing cost. In this regard, an emerging concept with a high-efficiency potential employ low/high work function metal compounds or organic materials form asymmetric electron hole heterocontacts. This Letter demonstrates two important milestones advancing burgeoning concept. First, high-performance,...
GaInP/GaAs//Si solar cells with three active p-n junctions were fabricated by surface activated direct wafer bonding between GaAs and Si. The bond is performed at room temperature leads to a conductive transparent interface. This allows the fabrication of high-efficiency monolithic tandem in both Si III-V materials. technology overcomes earlier challenges integration caused large difference lattice constant thermal expansion. Transmission electron microscopy revealed 5-nm thin amorphous...
Combining a Si solar cell with high-bandgap top reduces the thermalization losses in short wavelength and enables theoretical 1-sun efficiencies far over 30%. We have investigated fabrication optimization of Si-based tandem cells 1.8-eV rear-heterojunction GaInP cells. The III–V heterojunction subcells were fabricated separately joined by mechanical stacking using electrically insulating optically transparent interlayers. Our GaInP/Si dual-junction achieved certified cumulative efficiency...
Two different process technologies were investigated for the fabrication of high-efficiency GaInP/GaAs dual-junction solar cells on silicon: direct epitaxial growth and layer transfer combined with semiconductor wafer bonding. The intention this research is to combine advantages high efficiencies in III-V tandem low cost silicon. Direct a cell GaAs <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">y</sub> P...
The performance of dual-junction solar cells with a Si bottom cell has been investigated both theoretically and experimentally. Simulations show that adding top junction an energy bandgap 1.6 -1.9 eV to standard silicon enables efficiencies over 38%. Currently, junctions GaInP (1.8 eV) are the most promising as they can achieve 1-sun 20.8% [1]. We fabricated mechanically stacked, four terminal GaInP/Si tandem using transparent adhesive between subcells. These devices achieved efficiency 27%...
Highly efficient III-V/Si triple-junction solar cells were realized by a fabrication process based on direct wafer bonding: Ga0.51In0.49P/GaAs dual-junction grown inverted metal organic vapor phase epitaxy GaAs substrates and bonded to separately fabricated Si cells. The fast atom beam activated bond between highly doped n-Si n-GaAs enabled transparent electrically conductive interface. Challenges arising from the different thermal expansion coefficients of III-V semiconductors circumvented,...
Silicon heterojunction solar cells enable high conversion efficiencies, thanks to their passivating contacts which consist of layered stacks intrinsic and doped amorphous silicon. However, such may reduce the photo current, when present on illuminated side cell. This motivates search for wider bandgap contacting materials, as metal oxides. In this paper, we elucidate precise impact material parameters MoO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...
We report on light emission from biased metallic single-wall carbon nanotube (SWNT), multiwall (MWNT) and few-layer graphene (FLG) devices. SWNT devices were assembled tubes with different diameters in the range 0.7-1.5 nm. They emit visible spectrum peaks at 1.4 1.8 eV. Similar are observed for MWNT FLG propose that this is due to phonon-assisted radiative decay populated pi* band states M point Fermi level K point. Since most nanotubes as well energy of unoccupied close 1.6 eV, observation...
Molybdenum oxide (MoO X ) combines a high work function with broadband optical transparency. Sandwiched between hydrogenated intrinsic amorphous silicon passivation layer and transparent conductive oxide, this material allows highly efficient hole‐selective front contact stack for crystalline solar cells. However, hole extraction from the Si wafer transport through degrades upon annealing at 190 °C, which is needed to cure screen‐printed Ag metallization applied typical Here, we show that...
Fast atom beam activated direct wafer bonds can be used to combine GaAs and Si semiconductor structures achieve high bond strength optical transparency. Some applications require a low ohmic resistance between the materials. Therefore, IV-characteristics of n-type n-Si n-GaAs were thoroughly investigated. n-Si/n-Si showed below 2.5 × 10−3 Ωcm2. However diode like IV-curves found for both n-GaAs/n-GaAs n-Si/n-GaAs bonds. This explained by formation potential barrier at interface, caused...
This report provides a snapshot of emerging photovoltaic (PV) technologies. It consists concise contributions from experts in wide range fields including silicon, thin film, III-V, perovskite, organic, and dye-sensitized PVs. Strategies for exceeding the detailed balance limit light managing are presented, followed by section detailing key applications commercialization pathways. A on sustainability then discusses need minimization environmental footprint PV manufacturing recycling. The...
We describe work toward an interdigitated back passivated contact (IBPC) solar cell formed by patterned ionimplanted contacts. Formation of electron and hole contacts to n-type Cz wafers using a thin SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> layer ion-implanted amorphous silicon (a-Si) is described. P B were ion implanted into intrinsic a-Si films, forming symmetric IBPC test structures. The recombination parameter J...
Optically transparent, electrically conductive n-Si/n-GaAs direct wafer bonds are achieved by a thorough optimization of surface conditioning using fast atom beams. Bonding at room temperature under high-vacuum conditions is systematically investigated after in situ deoxidization either argon or helium Using argon, high bond energies up to 900 mJ/m2 obtained and further enhanced achieve bulk strength through rapid annealing 290 °C, thereby enabling the production thermally stable...
III-V multi-junction solar cells have become standard in space and terrestrial concentrator systems. The current landmark for is the Ga0.50In0.50P/Ga0.99In0.01As/Ge triple-junction, which only contains lattice-matched layers. This MOVPE-grown device available from different suppliers large quantities. Due to mature development status of this new concepts are being investigated increase efficiencies further. A toolbox ideas methods such as metamorphic and/or inverted growth, wafer bonding,...
We present a method for low temperature plasma-activated direct wafer bonding of III-V materials to Si using transparent, conductive indium zinc oxide interlayer. The (TCO) layer provides excellent optical transmission as well electrical conduction, suggesting suitability Si/III-V hybrid devices including Si-based tandem solar cells. For temperatures ranging from 100 °C 350 °C, Ohmic behavior is observed in the sample stacks, with specific contact resistivity below 1 Ω cm2 samples bonded at...
Abstract The partial replacement of Cu by Ag in Cu(In,Ga)Se 2 thin-film solar cells is strategically interesting to achieve smooth devices with high conversion efficiencies. Yet, the industrial exploitation requires further understanding deposition process and control absorber layer properties. In this study, three-stage co-evaporation (Ag,Cu)(Ga,In)Se films [Ag]/([Ag] + [Cu]) contents up 0.2 was investigated. Deep crevices voids, sometimes extending down rear contact, were found. They...
In this review we highlight the benefits of perovskites beyond photovoltaic technology, focusing on their use as lasers, light-emitting diodes or sensors, including technologies such gamma-ray detection aerospace applications.
Silicon-based tandem solar cells are desirable as a high efficiency, economically viable approach to one sun or low concentration photovoltaics. We present an wafer bonded III-V/Si using amorphous indium zinc oxide (IZO) interlayer. investigate the impact of heavily doped III-V contact layer on electrical and optical properties test samples, including predicted cell performance. economic modeling which indicates that path commercial viability for includes developing low-cost growth reducing...
Dual-junction solar cells consisting of rear-heterojunction GaInP top and back-junction, back-contacted crystalline Si bottom were fabricated characterized. Our calculations show that theoretical efficiencies up to 38.9% can be achieved with Si-based tandem devices. In our experiments, the two subcells separately stacked an index matching fluid. contrast conventional mechanically cells, contain metal grids at interface, concept includes a fully back contacted cell which reduces shadow losses...
There is tremendous interest in reducing losses caused by the metal contacts silicon photovoltaics, particularly optical and resistive of front grid. One commonly sought-after goal creation high aspect-ratio fingers which provide an optically narrow low resistance pathway to external circuit. Currently, most widely used contact deposition techniques are limited widths aspect-ratios ~40 μm ~0.5, respectively. In this study, we introduce use a micropatterned polydimethylsiloxane encapsulation...