A5065284989- Semiconductor materials and devices
- Ga2O3 and related materials
- Radiation Effects in Electronics
- GaN-based semiconductor devices and materials
- Silicon Carbide Semiconductor Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Electronic and Structural Properties of Oxides
- Luminescence Properties of Advanced Materials
- Electromagnetic Compatibility and Noise Suppression
- Interconnection Networks and Systems
Vanderbilt University
2023-2025
Low-energy ion-induced breakdown and single-event burnout (SEB) are experimentally observed in beta-gallium oxide ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga2O3) Schottky diodes with voltages well below those of expected electrical breakdown. Fundamentally different responses were among alpha particle, Cf-252, heavy-ion irradiation. Technology computer-aided...
Single-event burnout (SEB) is experimentally observed in structurally improved vertical Beta-gallium oxide ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga2O3) Schottky barrier diodes (SBDs) with Pt/PtOx contacts and high-k field-plate (FP) dielectrics. These SBDs are resistant to alpha particle strikes up the in-air reverse bias voltage of 475 V, but SEB-induced...
Single-event burnout and single-event leakage current behavior of 1200 V 3300 silicon carbide power devices are analyzed based on heavy-ion irradiation tests. Both (SEB) (SELC) degradation thresholds improved in the by at least 300 compared to devices. Additionally, it was demonstrated that measured SEB threshold is a strong function device bias history, steps intermediate voltages between charge collection region can result parametric failure from accumulated rather than catastrophic burnout.
<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\beta$</tex> -Ga <inf xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> is an ultrawide-bandgap material (4.6–4.9 eV) with a theoretical breakdown field of about 8 MV/cm [1]. Very few experimental results have been reported so far on the radiation response . In this work, ion-induced single-event burnout (SEB) experimentally observed in two...
GaN devices play a major role in modern electronics, providing high-power handling, efficient high-frequency operation, and resilience harsh environments. However, electric field crowding at the edge of anode often limits its full potential, leading to single-event effects (SEEs) lower bias voltages under heavy ion radiation. Here, we report on performance homojunction vertical PiN diodes with hybrid termination design irradiation, specifically, oxygen ions, chlorine Cf-252 fission...
Experimental heavy-ion responses of 3 kV charge-balanced (CB) SiC power devices are compared to those 3.3 planar devices. The similar, except the epitaxial region CB is heavily doped higher doping in results lower on-resistance, but typically leads a threshold drain voltage at which single-event burnout occurs. experimental demonstrate, however, that have similar SEB due improved electric field distribution.