Н. В. Латухина

ORCID: 0000-0003-2651-0562
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Research Areas
  • Silicon Nanostructures and Photoluminescence
  • Nanowire Synthesis and Applications
  • Thin-Film Transistor Technologies
  • Luminescence Properties of Advanced Materials
  • Gas Sensing Nanomaterials and Sensors
  • Anodic Oxide Films and Nanostructures
  • Ion-surface interactions and analysis
  • Carbon Nanotubes in Composites
  • Engineering Technology and Methodologies
  • Bone Tissue Engineering Materials
  • Pigment Synthesis and Properties
  • Field-Flow Fractionation Techniques
  • Electronic and Structural Properties of Oxides
  • GaN-based semiconductor devices and materials
  • Electron and X-Ray Spectroscopy Techniques
  • Laser-Ablation Synthesis of Nanoparticles
  • Quantum Dots Synthesis And Properties
  • Semiconductor materials and devices
  • Nuclear Materials and Properties
  • Silicon Carbide Semiconductor Technologies
  • Material Properties and Applications

Samara National Research University
2005-2023

Samara University
2018

Institute for Physics of Microstructures
2018

Experimental evaluation of the ability to use structures based on porous silicon for solar cells and LEDs is performed.Spectral characteristics photosensitivity with an upper layer carbide (nSiC / p-porSi heterostructures) are studied, as well photoluminescence spectra doped erbium (porSi : Er structures).1.

10.22184/1993-7296.2018.12.5.508.513 article EN Photonics Russia 2018-01-01

Abstract To analyze the characteristics of solar modules based on porous silicon involved in flight experiment aboard a small spacecraft AIST 2D, method computer simulation cell was used. The paper presents procedure for developing model photovoltaic Comsol Multyphysics. developed allows us to investigate current-voltage and voltage-watt determine main parameters. discrepancy between experimental data obtained from telemetry AIST-2D with results does not exceed 5%.

10.1088/1742-6596/1410/1/012096 article EN Journal of Physics Conference Series 2019-12-01

In this work the investigations of technology, morphology, electric and photoelectric properties silicon photosensitive structures have been represented. The included layers carbide porous silicon. layer was formed on surface single crystal substrates by method electrolytic etching in fluoride containing solutions. Plates with different microrelief (polished, honed, textured) were used. Carbidization samples leading to formation heterostructures SiC/Si conducted gas endotaxin a hydrogen...

10.17073/1609-3577-2014-4-284-289 article EN cc-by Izvestiya Vysshikh Uchebnykh Zavedenii Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering 2014-01-01

The electrical properties of porous silicon nanocomposites with various glucose solutions were studied. current-voltage characteristics (I–V) in water and tear fluid, as well samples porosities saturated these measured. porosity content the pores determined by gravimetric method. Measurements I–V photoconductivity showed that their conductivity appreciably depends on .

10.18287/jbpe20.06.010306 article EN cc-by Journal of Biomedical Photonics & Engineering 2020-03-26

The article presents the results of experimental researches optoelectric properties porous silicon. Layers silicon were formed using electrochemical etching process in water-alcohol solutions hydrofluoric acid on plates with a pre-established microrelief surface. Evaluation possibility created structure as artificial retina component was performed based research.

10.18287/2541-7525-2011-17-5-115-121 article EN Vestnik of Samara University Natural Science Series 2011-11-14

Hypotheses of current transfer mechanisms in electroluminescent structures porous silicon with erbium ions described by the theory discrete tunnelling are proposed. The excitation pre-breakdown electroluminescence pores occurs flight charge carriers through system nanocrystal - cluster oxide layer. A numerical calculation electric field distribution medium and along chain nanocrystals has been carried out. results calculating current-voltage characteristic qualitative alignment experimental...

10.1109/itnt57377.2023.10139154 article EN 2023-04-17

Работа посвящена исследованию люминесцентных свойств пористого кремния, легированного эрбием. Разработка полупроводниковых материалов, активированных лантаноидами, является актуальной задачей современной физики и технологии оптоэлектронных приборов. Объект исследований – окисленный пористый кремний, легированный ионами эрбия. Проведен структурно-морфологический анализ исследованы люминесцентные свойства образцов структур на основе В исследованиях применялись методы растровой электронной...

10.22184/1993-7296.fros.2024.18.7.540.548 article RU Photonics Russia 2024-11-11

Abstract The paper presents the results of modeling mechanism for producing porous silicon on a textured surface. For various technological tasks, it is important to learn how control parameters electrolytic etching obtain desired result. On 3D maps distribution potential and currents, you can see that vectors go around pyramids pointly etch certain sections Confirmations this be seen in photographs scanning electron microscope probe microscope. A detailed description pore formation...

10.1088/1742-6596/1745/1/012004 article EN Journal of Physics Conference Series 2021-02-01

Исследованы спектральные характеристики коэффициента зеркального отражения, фоточувствительности и фотолюминесценции многослойных структур на основе пористого кремния с ионами редкоземельных элементов. Показано, что фоточувствительность таких в диапазоне длин волн 0.4-1.0 мкм повышена по сравнению со структурами без Структуры Er 3+ проявляют люминесцентные свойства при комнатной температуре спектральном от 1.1 до 1.7 мкм. Спектр эрбиевой примеси представлен тонкой структурой линий,...

10.21883/ftp.2017.03.44209.8377 article RU Физика и техника полупроводников 2017-01-01

In present article, we are going to analyze the results of experimental researches photosensitive structure properties porous silicon (PS). The each have layers silicon, generated on surface single crystal plates, and DyF3 or ZnS cover it. conducted demonstrate that similar possesses high photo-electric characteristic can be used in solar cells.

10.1063/5.0027097 article EN AIP conference proceedings 2020-01-01

Abstract The research object is multilayer photosensitive structures with a porous silicon working layer and semiconductor zinc sulphide. purpose of this work to study the effect sulphide coating thickness on structure optical properties. reflection photosensitivity spectral characteristics various thicknesses were studied. It was shown that optimal 0.056 micrometers.

10.1088/1742-6596/1695/1/012001 article EN Journal of Physics Conference Series 2020-12-01

The results of experimental studies porous silicon nanocomposites with biological materials: powder mineral phase bone (hydroxyapatite) and biochemical solution identical to the natural tear fluid are presented in work. Layers have been obtained process electrochemical etching wafers. There IR reflection spectra samples range 4000-550 cm-1 produced.

10.18287/2541-7525-2013-19-3-75-84 article EN Vestnik of Samara University Natural Science Series 2013-09-01

We study photosensitive structures containing porous silicon layers made on different technological routes. The spectral characteristics of the reflection coefficient with a layer and their photosensitivity are investigated. effect diffusion optical properties structures. Modeling reflecting textured surface allows us to estimate appreciable contribution electrochemical treatment reduction over entire range.

10.1088/1742-6596/1096/1/012124 article EN Journal of Physics Conference Series 2018-12-01

Abstract In this study, three-dimensional fragments of nanowires structures were simulated in which the thread cross sections had a square, triangular and round shape. The theoretical data compared with experimental results, described detail [1]. influence shape filaments on course reflection curve is also shown.

10.1088/1742-6596/2086/1/012101 article EN Journal of Physics Conference Series 2021-12-01
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