Zhanymgul Koishybayeva

ORCID: 0000-0003-2659-4831
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About
Contact & Profiles
Research Areas
  • ZnO doping and properties
  • Ga2O3 and related materials
  • Gas Sensing Nanomaterials and Sensors
  • Advanced Photocatalysis Techniques
  • Transition Metal Oxide Nanomaterials
  • Advanced Chemical Sensor Technologies

L. N. Gumilyov Eurasian National University
2021-2024

First-principles density functional theory (DFT) is employed to study the electronic structure of oxygen and gallium vacancies in monoclinic bulk β-Ga2O3 crystals. Hybrid exchange-correlation B3LYP within supercell approach were successfully used simulate isolated point defects β-Ga2O3. Based on results our calculations, we predict that an vacancy a deep donor defect which cannot be effective source electrons and, thus, not responsible for n-type conductivity On other hand, all types charge...

10.3390/ma14237384 article EN Materials 2021-12-02

Indium tin oxide thin films were deposited by magnetron sputtering on ceramic aluminum nitride substrates and annealed at temperatures of 500 °C 600 °C. The structural, optical, electrically conductive gas-sensitive properties indium studied. possibility developing sensors with low nominal resistance relatively high sensitivity to gases was shown. in pure dry air did not exceed 350 Ohms dropped about 2 times when increasing the annealing temperature 100 characterized gases. maximum responses...

10.3390/ma16010342 article EN Materials 2022-12-29

In this study, chemical deposition was used to synthesize structures of Ga2O3 -NW/SiO2/Si (NW—nanowire) at 348 K and SnO2-NW/SiO2/Si 323 in track templates SiO2/Si (either n- or p-type). The resulting crystalline nanowires were δ-Ga2O3 orthorhombic SnO2. Computer modeling the delta phase gallium oxide yielded a lattice parameter = 9.287 Å, which closely matched experimental range 9.83–10.03 Å. bandgap is indirect with an Eg 5.5 eV. photoluminescence spectra both nanostructures exhibited...

10.3390/cryst14121087 article EN cc-by Crystals 2024-12-18

Despit many studies dedicated to the defects in β-Ga2O3, information about formation processes of complex "donor-acceptor" β-Ga2O3 and their energetic characteristics is still very scarce. Meanwhile, defects, such as pair vacancies, are often indicated electrically active centers that can play role acceptor defects. We have carried out comparative ab initio study energies, well optical thermodynamic transition levels single vacancies β-Ga2O. It was confirmed gallium oxygen deep acceptors...

10.1016/j.omx.2022.100200 article EN cc-by-nc-nd Optical Materials X 2022-10-01
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