A5080367628- Semiconductor materials and devices
- Minerals Flotation and Separation Techniques
- Advanced biosensing and bioanalysis techniques
- Diatoms and Algae Research
- Ga2O3 and related materials
- Ferroelectric and Negative Capacitance Devices
- Acoustic Wave Resonator Technologies
- Electrical and Bioimpedance Tomography
- Polymer Surface Interaction Studies
- Electronic and Structural Properties of Oxides
- Advanced Proteomics Techniques and Applications
- Analytical Chemistry and Sensors
- Advanced machining processes and optimization
- GaN-based semiconductor devices and materials
- Pickering emulsions and particle stabilization
- Microfluidic and Bio-sensing Technologies
- Conducting polymers and applications
- Metal and Thin Film Mechanics
- Advanced Memory and Neural Computing
- Characterization and Applications of Magnetic Nanoparticles
- Advanced Surface Polishing Techniques
- Microfluidic and Capillary Electrophoresis Applications
- ZnO doping and properties
- Semiconductor materials and interfaces
- Catalytic Processes in Materials Science
Massachusetts Institute of Technology
2025
University of Alberta
2013-2023
This work explores the applicability of atomic layer deposition (ALD) in producing highly oriented crystalline gallium oxide films on foreign substrates at low thermal budgets. The effects substrate, temperature, and annealing process formation are discussed. Ga2O3 exhibited a strong preferred orientation c-plane sapphire substrate. onset is determined, which only two sets planes, i.e., α-Ga2O3 (006) β-Ga2O3 (4̅02), present parallel to surface. More specifically, this reports, for first...
In this work, we study polarization switching behavior in scaled hafnium–zirconium oxide (HZO) ferroelectric (FE) field-effect transistors with an amorphous oxide-semiconductor channel dimensions down to the FE domain level. Channel thickness scaling acts as effective approach memory window (MW) enhancement. With indium–tin of 2.5 nm, demonstrate a large MW 2.2 V. Discrete is observed narrow- and short-channel transistors, where small number domains are involved. Based on detailed length,...
Biomining of valuable metals using a target specific approach promises increased purification yields and decreased cost. Target specificity can be implemented with proteins/peptides, the biological molecules, responsible from various structural functional pathways in living organisms by virtue their recognition abilities towards both organic inorganic materials. Phage display libraries are used to identify peptide biomolecules capable specifically recognizing binding organic/inorganic...
Electrokinetic sheath-flow is one of the techniques used to manipulate sample migration and prevent cross-contamination in multi-channel microfluidic devices. To achieve a successful design, it important predict behaviour advance. We use finite element method investigate effect channel geometry on leakage presence electrokinetic sheath-flow. A typical device consisting main fractionation connected few collection channels considered. It has been observed experimentally that depth different...
We have carried out extensive characterization of the AC impedance W/HZO/W ferroelectric structures from 1 kHz to 10 GHz. found that distinct butterfly shape C-V characteristics persists up highest frequencies but its frequency dependence is extinguished around also find conductance increases with frequency. The dispersion capacitance consistent electron trapping at border traps close W/HZO interface. in GHz range postulated arise depletion and accumulation universal dielectric response...
Gallium oxide (Ga 2 O 3 ) is a wide bandgap material (bandgap ~4.0 eV – 5.2 eV) with large breakdown field that has considerably high figures of merit (FOM) in power handling compared to other semiconductor materials use today (such as GaN and SiC) [1, 2]. also expected expand the operating spectral range optoelectronic devices deep UV. Properties gallium depend on its crystal structure; amorphous [3, 4] well different crystalline forms [5] this have been used electronic devices. Among...