Brian A. Eisner

ORCID: 0000-0003-2755-4313
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About
Contact & Profiles
Research Areas
  • Astronomy and Astrophysical Research
  • Advanced Photocatalysis Techniques
  • Astrophysics and Star Formation Studies
  • Ga2O3 and related materials
  • Astronomical Observations and Instrumentation
  • Adaptive optics and wavefront sensing
  • Galaxies: Formation, Evolution, Phenomena
  • ZnO doping and properties
  • Stellar, planetary, and galactic studies
  • Magnesium Oxide Properties and Applications
  • Radio Astronomy Observations and Technology
  • Molecular Spectroscopy and Structure
  • Scientific Research and Discoveries

University of Utah
2020-2024

National Radio Astronomy Observatory
2019

Macalester College
2016-2019

University of Virginia
2019

McCormick (United States)
2019

Homoepitaxial growth of β-Ga2O3 using metalorganic vapor-phase epitaxy (MOVPE) on several different crystal orientations has previously been studied, but the (2¯01) plane remained comparatively unexplored. To investigate this, we grew Si-doped and unintentionally doped (UID) homoepitaxial layers simultaneously Sn-doped (010) substrates under conditions optimized for growth. We report herein results from current–voltage capacitance–voltage (IV CV) deep level transient spectroscopy (DLTS)...

10.1063/5.0022043 article EN publisher-specific-oa Journal of Applied Physics 2020-11-20

ABSTRACT We present new H i spectral-line images of the nearby low-mass galaxy NGC 5238, acquired with Karl G. Jansky Very Large Array. Located at a distance 4.51 ± 0.04 Mpc, 5238 is an actively star-forming widespread α and ultraviolet (UV) continuum emission. The source included in many ongoing recent surveys, but until this work spatially resolved qualities its neutral interstellar medium have remained unstudied. Our resolve disk on physical scales ∼400 pc, allowing us to undertake...

10.3847/0004-6256/152/6/202 article EN The Astronomical Journal 2016-12-01

Diffusion of native defects such as vacancies and their interactions with impurities are fundamental in semiconductor crystal growth, device processing, long-term aging equilibration transient diffusion rarely investigated. We used aluminum-gallium oxide/gallium oxide superlattices (SLs) to detect analyze cation during annealing O2 at 1000-1100 C. Using a novel finite difference scheme for the equation time- space-varying constant, we extract constants Al, Fe, under given conditions,...

10.48550/arxiv.2403.17298 preprint EN arXiv (Cornell University) 2024-03-25

Diffusion of native defects such as vacancies and their interactions with impurities are fundamental to semiconductor crystal growth, device processing, design. However, the transient equilibration is difficult directly measure. We used (AlxGa1−x)2O3/Ga2O3 superlattices (SLs) detect analyze diffusion cation during annealing in O2 at 1000–1100 °C. Using a novel finite difference scheme for time- space-varying constants, we determined constants Al, Fe, vacancies, including vacancy...

10.1063/5.0206398 article EN cc-by APL Materials 2024-08-01

Centimeter-wave transitions are important counterparts to the rotational millimeter-wave usually observed study gas in star-forming regions. However, given their relative weakness, these have historically been neglected. We present Australia Telescope Compact Array 4 cm and 15 mm band spectral line observations of nine nearby galaxies H75 array configuration. Thirteen different molecular lines detected across sample from OH, NH3, H2O, H2CO, c-C3H2, as well 18 radio recombination (RRLs) NGC...

10.3847/1538-4357/ab3854 article EN The Astrophysical Journal 2019-09-06
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