About
Contact & Profiles
A5050791114
Research Areas
- Neuroscience and Neural Engineering
- Molecular Junctions and Nanostructures
- Advanced Thermoelectric Materials and Devices
- Electronic and Structural Properties of Oxides
- High-pressure geophysics and materials
- Photoreceptor and optogenetics research
- Advanced Memory and Neural Computing
- Graphene research and applications
- Diamond and Carbon-based Materials Research
China University of Geosciences
2023-2024
Changshu Institute of Technology
2016
10.1016/j.carbon.2016.08.014
article
EN
Carbon
2016-08-07
Herein, an ultralow‐threshold voltage‐responsive synaptic memristor based on Cu x O and B‐doped diamond (BDD) heterojunctions is developed. The aggregation of oxygen vacancies corresponding to the high‐ low‐resistance states forms foundation for hysteresis behavior. I – V curves exhibit impressive analog resistive switching (analog RS), which renders highly suitable simulating stimulation. reliable stability this structure confirmed using 122 individual devices, achieving a yield 90.2% with...
10.1002/pssa.202400707
article
EN
physica status solidi (a)
2024-11-14
10.1016/j.carbon.2023.118730
article
EN
Carbon
2023-12-13
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