A5103265238- Ga2O3 and related materials
- ZnO doping and properties
- Semiconductor materials and devices
- Copper-based nanomaterials and applications
- Gas Sensing Nanomaterials and Sensors
- Advanced Photocatalysis Techniques
- Magnesium Oxide Properties and Applications
- Luminescence Properties of Advanced Materials
- Glass properties and applications
- Photorefractive and Nonlinear Optics
- Nonlinear Optical Materials Studies
Ioffe Institute
2023-2024
Corundum-structured chromium oxide (a-Cr2O3), exhibiting p-type conductivity, is a highly attractive candidate for forming high-quality p-n heterojunctions with a-Ga2O3. Two CVD growth techniques were employed in the fabrication of heterostructure. A ~ 0.2-micron a-Cr2O3 layer was grown on (0001) sapphire substrate using mist at 800 °C. It possesses high morphological homogeneity and low roughness, which acceptable further epitaxial processes. Subsequently, Sn-doped a-Ga2O3 thickness 1.5 µm...
Single-crystalline α-Cr 2 O 3 layers were synthesized on a sapphire substrate with basal orientation in laboratory reactor using ultrasonic-assisted chemical vapor deposition the temperature range of 700-850 o C. The influence growth structural quality layer was studied by X-ray diffraction. At 800 C, continuous thickness about 1 μm obtained. transparent visible region slightly greenish tint and showed some light transmission up to wavelengths ~ 350 nm. full width at half maximum rocking...
Micron-thick layers of (Cr1-xGax)2O3 solid solutions were grown by modified mist chemical vapor deposition (mist-CVD) with three different Ga concentrations. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) methods used to analyze the quality films. They showed good crystallinity, homogeneity coalescence samples. Solid solution contents estimation was performed via applying Vegard's law XRD data its results highest reached Cr:Ga ratio is approximately 1:1. Transmission spectra...