A5078720254- Magnetic properties of thin films
- Quantum and electron transport phenomena
- Magnetic and transport properties of perovskites and related materials
- Multiferroics and related materials
- Advanced Condensed Matter Physics
- Advanced Memory and Neural Computing
- Electronic and Structural Properties of Oxides
- Ferroelectric and Negative Capacitance Devices
- Ferroelectric and Piezoelectric Materials
- Semiconductor materials and devices
- Persona Design and Applications
- Technology Use by Older Adults
- Topological Materials and Phenomena
- Cold Atom Physics and Bose-Einstein Condensates
- ZnO doping and properties
- 2D Materials and Applications
- Copper Interconnects and Reliability
- Graphene research and applications
- Rare-earth and actinide compounds
- Mobile Health and mHealth Applications
CIC nanoGUNE
2019-2024
Delft University of Technology
2017
Abstract As CMOS technologies face challenges in dimensional and voltage scaling, the demand for novel logic devices has never been greater, with spin-based offering scaling potential, at cost of significantly high switching energies. Alternatively, magnetoelectric materials are predicted to enable low-power magnetization control, a solution limited device-level results. Here, we demonstrate voltage-based reading nanodevices room temperature, enabled by exchange coupling between multiferroic...
We report on the discovery and transport study of superconducting ground state present at (111)${\mathrm{LaAlO}}_{3}/{\mathrm{SrTiO}}_{3}$ (LAO/STO) interface. The transition is consistent with a Berezinskii-Kosterlitz-Thouless its two-dimensional nature further corroborated by anisotropy critical magnetic field, as calculated Tinkham. estimated layer thickness coherence length are 10 $60\phantom{\rule{0.28em}{0ex}}\mathrm{nm}$, respectively. results this work provide insight to clarify...
The conversion of spin currents polarized in different directions into charge is a keystone for novel spintronic devices. Van der Waals heterostructures with tailored symmetry are very appealing platform such goal. Here, by performing nonlocal precession experiments, we demonstrate the spin-to-charge (SCC) spins oriented all three (x, y, and z). By analyzing magnitude temperature dependence signal configurations, argue that SCC components measured likely due to spin-orbit proximity broken at...
Ferromagnet (FM)\ifmmode\text{\textcelsius}\else\textcelsius\fi{}heavy-metal (HM) nanostructures can be used for magnetic state readout in the proposed magnetoelectric spin-orbit logic by locally injecting a spin-polarized current and measuring spin-to-charge conversion via spin Hall effect. However, this local configuration is prone to spurious signals. Here, we address effects that contaminate signal these FM/HM T-shaped nanostructures. The most pronounced our...
Spin-charge interconversion in systems with spin-orbit coupling has provided a new route for the generation and detection of spin currents functional devices memory logic such as torque switching magnetic memories or magnetic-state reading spin-based logic. Disentangling bulk (spin Hall effect) from interfacial (inverse galvanic contribution been common issue to properly quantify spin-charge these systems, being case Au paradigmatic. Here, we obtain large at highly conducting Au/Cu interface...
One of the major obstacles to realizing spintronic devices such as MESO logic is small signal magnitude used for magnetization readout, making it important find materials with high spin-to-charge conversion efficiency. Although intermixing at junction two a widely occurring phenomenon, its influence on material characterization and estimation efficiencies are easily neglected or underestimated. Here, we demonstrate all-electrical in BixSe1-x nanodevices show how efficiency can be...
Spin-orbitronic devices can integrate memory and logic by exploiting spin-charge interconversion (SCI), which is optimized design materials selection. In these devices, interfaces are crucial elements as they prohibit or promote spin flow in a device well possess spin-orbit coupling resulting interfacial SCI. Therefore, investigation of spin-orbitronic important. Here, we study the origin SCI Py/Cu/W lateral valve quantify its efficiency. An exhaustive characterization interface between Cu W...
600 mV magneto-electric switching in 30 nm La-doped BiFeO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> multiferroic oxide and a proof of concept 7 μV spin-orbit signal output Pt / CoFe local spin injection device with 100 μA supply current were experimentally demonstrated at room temperature for the 1 <sup xmlns:xlink="http://www.w3.org/1999/xlink">st</sup> time. Also was path towards 70 orbit using Bi...
We present the first experimental realization of a magnetoelectric spin-orbit (MESO) logic device at room temperature. Two states are determined by magnetization direction nanostructured CoFe element, which is switched BiFeO3 layer (WRITE) and detected through spin-to-charge conversion effect in Pt element (READ).
With the deceleration of dimensional and voltage scaling in CMOS technologies, demand for novel logic devices has never been greater. While spin-based present a major opportunity towards favorable scaling, switching energies are still orders magnitude above expected values. Alternatively, magnetoelectric materials predicted to enable low-power control magnetization, relatively unexplored pathway with sparse results at device level. Here, we demonstrate voltage-based magnetization reading...
The development of spin-orbitronic devices, such as magnetoelectric spin-orbit logic calls for materials with a high resistivity and spin-charge interconversion efficiency. One the most promising candidates in this regard is sputtered ${\mathrm{Bi}}_{x}{\mathrm{Se}}_{1\ensuremath{-}x}$. Although there are several techniques to quantify interconversion, reported values date ${\mathrm{Bi}}_{x}{\mathrm{Se}}_{1\ensuremath{-}x}$ have often been overestimated due spurious effects related local...
Spin-orbitronic devices can integrate memory and logic by exploiting spin-charge interconversion (SCI), which is optimized design materials selection. In these devices, such as the magnetoelectric spin-orbit (MESO) logic, interfaces are crucial elements they prohibit or promote spin flow in a device well possess coupling resulting interfacial SCI. Here, we study origin of SCI Py/Cu/W lateral valve quantify its efficiency. An exhaustive characterization interface between Cu W electrodes...