Ti vacancies in 18-electron half-Heusler compound 0.75 NiSb cause lower lattice thermal conductivity.

The RAlX (R = Light rare earth; X Ge, Si) compounds, as a family of magnetic Weyl semimetal, have recently attracted growing attention due to the tunability nodes and its interactions with diverse magnetism by rare-earth atoms. Here, we report magnetotransport evidence electronic structure calculations on nontrivial band topology SmAlSi, new member this family. At low temperatures, SmAlSi exhibits large non-saturated magnetoresistance (MR) (as ∼5500% at 2 K 48 T) distinct Shubnikov-de Haas...

The internal magnetism introduced by the magnetic nanoparticles combined with external field can provide an effective way to modulate thermoelectric (TE) properties of materials. Herein, we comparably investigate effect Fe3O4 (Fe3O4-NPs) and on cryogenic Fe3O4-NP/Bi0.85Sb0.15 nanocomposites. With ferromagnetism-superparamagnetism transition, Fe3O4-NPs in superparamagnetic state exhibit a stronger magneto-trapped carrier effect, where electron concentration at high temperature is evidently...

While tunnel boring machines (TBMs) tunneling in clayey strata, the adhered excavated soil on cutterhead and cutting tools tends to form mudcake after compaction consolidation.Mudcake can obstruct openings rendering ineffective, leads a substantial reduction advance rate.Dispersants are recognized as an effective method for disintegration of mudcakes.A novel set equipment, comprising compression device apparatus, is developed assessing properties.The results showed that mudcakes underwent...

The high ZT values of 0.45 under 0 T and 0.64 1 at cryogenic temperature are achieved for a porous Bi 0.85 Sb 0.15 /1 vol% SbCl 3 material prepared by sublimation due to large decrease thermal conductivity.

Ti0.75NiSb is a half-Heusler compound with low lattice thermal conductivity due to large number of cation vacancies. However, the higher carrier concentration limits improvement its thermoelectric performance. In this paper, magnetic Fe nanoparticles size 30 nm are composited into in form second phase. The charge transfer between and leads decrease concentration. strong interaction moment carriers enhances electron scattering, so that scattering factor increases mobility decreases. combined...

The negative differential resistance (NDR) effect and magnetoresistance (MR) attract a lot of attention since they have been widely applied in fields such as circuit amplifiers information storage, respectively. In general, the NDR MR effects derive from different physical mechanisms, which makes it difficult to obtain both an large unsaturated device based on same mechanism. this paper, were observed simultaneously In/SiO2/p-Si/SiO2/In hetero junction devices, their mechanisms investigated....

Local avalanche breakdown in an Ag/SiO2/p-Si:B/SiO2/Ag device was successfully detected by in-situ detection circuit, which composed of a p-Si:B substrate, two p-Si:B/SiO2/Ag metal-oxide-semiconductor (MOS) structures formed on it, and voltmeter. In our device, we observed series discharge peaks the voltage-current curves were corresponding to generation local plasmas regimes. The led sudden increase carriers concentration substrate resulted voltage drops across then MOS started V-I...

Thermoelectric refrigeration technology is an environment-friendly with broad application prospects. The Peltier effect plays a central role in the thermoelectric process, however, coefficient difficult to measure. So actual first, Seebeck usually obtained, and then achieved by Kelvin's second relation indirectly. It should be noted that obtained under linear conditions (Ohm's law, Fourier's etc.), while practice, nonlinear current-voltage relationships (Schottky junction, pn etc.) heat...

Bi1−xSbx alloys with large linear magnetoresistance (LMR) are a promising candidate for magneto-electronic devices. In this work, the highly (00l) textured (0 ≤ x 0.04) ribbons nano-sized lamellar grains were prepared by melt spinning method and their magneto-transport properties investigated. All exhibit obvious LMR features, crossover magnetic field (Bc) from quadratic to is remarkably reduced Sb doping. Compared Bc of = 0 ribbon (about 1.28 T at 300 K), values doped significantly smaller,...

It is still a great challenge for semiconductor based-devices to obtain large magnetoresistance (MR) effect under low magnetic field at room temperature. In this paper, the photoinduced MR effects different intensities of illumination temperature are investigated in semi-insulating gallium arsenide (SI-GaAs)-based Ag/SI–GaAs/Ag device. The device subjected irradiation light which supplied by light-emitting diode (LED) lamp beads with wavelength range about 395 nm–405 nm and working power...

The perpendicular magnetic anisotropy (PMA) and spin-orbit torque (SOT) of the TbCo based multilayer films have been methodically studied in recent years. Especially improving efficiency SOT, PMA is a prerequisite for achieving high efficiency. We report on effects W/Pt Pt as buffer layers multilayers at different temperature. results showed that coercivity increases dramatically with decreasing temperature, samples without room temperature low temperatures. At structure composed two heavy...

Understanding nonequilibrium transport phenomena in bosonic systems is highly challenging. Magnons, as bosons, exhibit different behavior from fermionic electron spins. This study focuses on the key factors influencing of magnons steady states within magnetic insulators by taking Y<sub>3</sub>Fe<sub>5</sub>O<sub>12</sub> (YIG) for example. By incorporating Bose-Einstein distribution function with a non-zero chemical potential...

Topological antiferromagnetic Mn3Sn crystals exhibit notable magnetic and transport properties, comparable to ferromagnets, undergo various intriguing phase transitions during heating or cooling. The spin structures of crystals...

The spontaneous exchange bias effect (SEB) has wide application prospects in information storage technologies. In this study, nanoscale raw materials were used to fabricate antiferromagnetic Fe3BO6 polycrystals. obtained exhibited a large SEB effect, where the value of field at room temperature was as ∼4234 Oe. room-temperature training temperature-dependence, and maximum field-dependence HSEB investigated. We propose that giant originates from exchange-coupling interactions between weak...

Nonmagnetic semiconductor based magnetoresistance (MR) devices combining high performance and low cost have attracted a lot of attention. However, it has been great challenge to separate the interface MR from bulk in composed Schottky heterojunctions. In this paper, effect silicon-based heterojunction device had studied, its mechanisms were investigated by separating effects through two-probe four-probe methods. We find that value is significantly smaller than total avalanche breakdown...

The anomalous Hall effect and spin–orbit torque of TbCo-based multilayer films have been methodically studied in recent years. Many properties the can be obtained by resistance loops samples. We report on effects a structure composed two heavy metals as buffer layers multilayers at different temperatures. results showed that coercivity increases dramatically with decreasing temperature, samples without perpendicular magnetic anisotropy room temperature low quantified efficiency...

Negative differential resistance (NDR) effect has its research significance and application value. However, the evolution of NDR under magnetic fields (especially ultrahigh fields) is rarely reported unclear. Herein, electrical transport properties Ge‐based devices Ag/p‐Ge:Ga/Ag are investigated. In these devices, behavior observed from 77 to 300 K, which mainly related minority injection effect. Under static field conditions, effectively enhanced presented with geometrical‐related...

Magnetoelectric (ME) coupling is highly desirable for sensors and memory devices. Herein, the polarization (P) magnetization (M) of DyFeO3 single crystal were measured in pulsed magnetic fields, which ME behavior modulated by multi-magnetic order parameters has high magnetic-field sensitivity. Below ordering temperature Dy3+-sublattice, when field along c-axis, P (corresponding to a large critical 3 T) generated due exchange striction mechanism. Interestingly, ab-plane, with smaller fields...