A5029099988- Photonic and Optical Devices
- Optical Network Technologies
- Advanced Fiber Laser Technologies
- Semiconductor Lasers and Optical Devices
- Semiconductor Quantum Structures and Devices
- Advanced Photonic Communication Systems
- Photorefractive and Nonlinear Optics
- Quantum and electron transport phenomena
- Diverse Scientific Research in Ukraine
- Photonic Crystals and Applications
- Laser-Matter Interactions and Applications
- Diverse Aspects of Tourism Research
- X-ray Diffraction in Crystallography
- Quantum Dots Synthesis And Properties
- Terahertz technology and applications
- Photonic Crystal and Fiber Optics
- Crystallization and Solubility Studies
- Semiconductor materials and interfaces
- Quasicrystal Structures and Properties
- Advanced Semiconductor Detectors and Materials
- Plasmonic and Surface Plasmon Research
- Cruise Tourism Development and Management
- Advanced Fiber Optic Sensors
- Advanced Optical Imaging Technologies
- Metamaterials and Metasurfaces Applications
National Research Council
2020
Louisiana Tech University
2020
University of Akron
2020
Purdue University West Lafayette
1995-2020
Caerus Molecular Diagnostics (United States)
2020
University of Southern Mississippi
2020
Sherwin Williams (United States)
2020
University of Houston
2020
KTH Royal Institute of Technology
2020
Goodyear (United States)
2020
The two-photon absorption coefficient and Kerr of bulk crystalline silicon are determined near the telecommunication wavelengths 1.3 1.55 μm using femtosecond pulses a balanced Z-scan technique. A phase shift sensitivity order 1 mrad is achieved, enabling accurate measurement third-order nonlinear coefficients at fluences smaller than 100 μJ/cm2. From (β∼0.8 cm/GW) (n2∼4×10−14 cm2/W) wavelength λ=1.54 μm, value F∼0.35 for figure merit all-optical switching determined.
An analysis of the dispersion two-photon absorption and Kerr nonlinearity indirect semiconductors below bandgap is presented. Similar to case linear absorption, third-order nonlinear processes are found be mediated by phonon-assisted transitions. The coefficient n <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> positive gap, nonlinearities reduced relative direct semiconductors. results compared with existing experimental data in silicon.
We present a detailed system design and available technology choices for building large scale (> 100 qubits) ion trap quantum information processor (QIP). The is based on technologies that are within reach today, utilizes single-instruction-on-multiple-data (SIMD) principles to re-use resources cannot be duplicated easily. engineering adopted highlight various tradeoffs in the QIP serve as guideline find spaces much larger QIP.
We demonstrate compensation of fiber nonlinearities using optical phase conjugation an 8-channel WDM 32-Gbaud PDM QPSK signal. Conjugating every 600 km in a loop enabled 6000 transmission over TrueWave fiber.
We propose a method for increased-speed all-optical XOR operation using semiconductor optical amplifiers. demonstrate and XNOR operations at 86.4 Gb/s pair of photonic-integrated amplifier Mach-Zehnder interferometers.
We demonstrate polarization-independent parametric amplification of a 2.048-Tbit/s 8-WDM PDM 16-QAM signal and simultaneous wavelength conversion phase conjugation in highly nonlinear fiber. Two high-power continuous-wave pumps with orthogonal polarizations counter-phase modulation are used the fiber optical amplifier (FOPA) to achieve broadband flat gain, polarization independence, high-quality idler generation. The FOPA is amplitude preserving has ~10 dB on-off gain for ~9 efficiency 1-dB...
The optical properties of strained GaAsSb/GaAs quantum wells grown by molecular beam epitaxy were investigated photoluminescence spectroscopy as a function excitation intensity and temperature. Photoluminescence spectra exhibit strong blue shifts the emission peak with increasing intensity, ascribed to interplay between band tail filling at low carrier densities electrostatic bending high concentrations. Spectroscopic data are consistent type II alignment, small conduction offset (ΔEc∼100...
We present experimental investigations of the dynamical properties semiconductor optical amplifiers (SOAs) and their impacts in all-optical signal processing using SOAs. introduce ultrafast characterization techniques to fully characterize gain phase dynamics elucidate a consequence slow carrier recovery as pattern-dependent fluctuation wavelength conversion on-off -keyed signals. also analyze into amplitude limiting performance xor operation. Finally, differential phase-shift-keyed signals...
We demonstrate a compact reconfigurable 8-bit optical matching filter fabricated using 4% delta high-index-contrast silica-on-silicon waveguides. This planar lightwave circuit is based on an eighth-order tap-and-delay finite impulse response architecture. Multimode interference-based splitters/combiners along with variable attenuators and phase shifters allow us to tune dynamically reconfigure all the taps delays (filter coefficients) in simple automated algorithm. The designed recognize...
This paper presents a novel primality test based on the eigenvalue structure of circulant matrices constructed from roots unity. We prove that an integer $n > 2$ is prime if and only minimal polynomial matrix $C_n = W_n + W_n^2$ has exactly two irreducible factors over $\mathbb{Q}$. characterization connects cyclotomic field theory with algebra, providing both theoretical insights practical applications. demonstrate patterns these reveal fundamental distinctions between composite numbers,...
We demonstrate optical performance monitoring (OPM) using intensity autocorrelations of 10-Gb/s return-to-zero (RZ) data. Data stream are used for the quantitative determination signal-to-noise ratio (OSNR) and accumulated dispersion values up to half Talbot dispersion. Autocorrelations performed sensitive two-photon absorption in photon counting silicon avalanche photodiodes. Simulations experimental results retrieval presence large
A novel method of all-optical wavelength conversion DPSK signal is presented. We demonstrate 40-Gb/s signals with a large dynamic range input OSNR, and significant reduction phase fluctuations. (2 pages)
We experimentally demonstrate the generation of 1.024-Tb/s Nyquist-WDM phase-conjugated vector twin waves (PCTWs), consisting eight 128-Gb/s polarization-division-multiplexed QPSK signals and their idlers, by a broadband polarization-insensitive fiber optic parametric amplifier. This novel all-optical signal processing approach to generate WDM-PCTWs enables 2-fold reduction in needed optical transmitters as compared conventional where each idler is generated dedicated transmitter. Digital...
We report continuous-wave room temperature operation of a GaAsSb-GaAs quantum-well vertical-cavity surface-emitting laser near 1.3 μm. The device is pumped with 674 nm light and provides 1-QmW total optical output at 1280 40% differential quantum efficiency. describe the spatial, angular spectral properties laser. This sets record for long wavelength high power in system.
We demonstrate all-optical recognition of a byte pattern embedded in phase-shift-keyed data streaming at 40 Gb/s. use matched filtering to generate an autocorrelation pulse indicating the matching. Matched is implemented using reconfigurable silica planar-lightwave-circuit optical delay-line filter. show excellent discrimination against spurious patterns consistent with theoretical predictions.
We demonstrate logic functionalities in a high-speed all-optical circuit based on differential Mach-Zehnder interferometers with semiconductor optical amplifiers as the nonlinear elements. The circuit, implemented by hybrid integration of planar lightwave platform fabricated silica glass, can be flexibly configured to realize variety Boolean gates. present both simulations and experimental demonstrations cascaded operations for 80-Gb/s on-off keyed data.
In transmission studies of two-dimensional AlGaAs-based photonic crystal waveguide structures, we demonstrate high coupling efficiencies from ridge waveguides to using tapers. Enhanced bending and bend bandwidths are achieved by use modified bends.
We study Coulomb and carrier dynamics in self-assembled InAs/GaAs quantum dots at room temperature by two-color tunable differential transmission experiments, with resonant excitation the ground state. renormalization of first excited state presence one electron-hole pair manifests as a 6-meV redshift. Several time scales for activation to are distinguished, corresponding processes occurring singly doubly occupied dots, including thermalization. Electron thermal occurs on 250 ps scale,...
Wavelength shifting of a 21.4-Gbaud 64-QAM signal is achieved using Bragg scattering with dither-free pumping in longitudinally stressed highly nonlinear silica fiber. Three wavelengths over 10-nm tuning range centered on 24-nm shift are demonstrated penalty less than 2 dB at BER 10-3.
A multiwavelength source for optical transmitters delivers narrow-linewidth carrriers with 100-GHz spacing spanning the C and L bands. The phase-locked carriers are derived from a single, 3-kHz linewidth source, multistage parametric mixer. Bit-error rate measurements 20-GBd 16-QAM transmitter based on this reported.
Room temperature pulsed lasing at 1.29 µm in an optically pumped GaAsSb/GaAs quantum well VCSEL on a GaAs substrate is reported. This the longest wavelength reported this material system.
We propose and demonstrate all-optical method for generating advanced modulation formats with high-spectral efficiency. The proposed is based on format conversion using photonic-integrated semiconductor optical amplifier-Mach-Zehnder interferometers. It enables application of at data rates not directly accessible electronic means only. generation single-polarization 86.4-Gb/s binary phase-shift keying 173-Gb/s quadrature signals.
A 1.9 µm hybrid silicon/III‐V laser based on a wafer bonding technique is reported. The gain materials are InGaAs multiple quantum wells grown InP substrate, with strain compensation between barriers and wells. III‐V bonded to silicon‐on‐insulator processed silicon waveguides transition tapers. Laser emission threshold current of 95 mA at room temperature 45 5 °C demonstrated.