A5057554234- Chalcogenide Semiconductor Thin Films
- Advanced Thermoelectric Materials and Devices
- Heusler alloys: electronic and magnetic properties
- 2D Materials and Applications
- Quantum Dots Synthesis And Properties
- Magnetic and transport properties of perovskites and related materials
- Crystal Structures and Properties
- Perovskite Materials and Applications
- Iron-based superconductors research
- Plasma Diagnostics and Applications
- Semiconductor materials and devices
- Advanced Condensed Matter Physics
- Plasma Applications and Diagnostics
- ZnO doping and properties
- MXene and MAX Phase Materials
- Advanced Semiconductor Detectors and Materials
- Rare-earth and actinide compounds
- Inorganic Chemistry and Materials
- Optical Polarization and Ellipsometry
- Spectroscopy and Chemometric Analyses
- Leaf Properties and Growth Measurement
- Solid-state spectroscopy and crystallography
- Boron and Carbon Nanomaterials Research
- Metal and Thin Film Mechanics
- Luminescence Properties of Advanced Materials
National University of Sciences and Technology
2020-2025
National University of Science and Technology
2021
University of Sargodha
2018-2020
University of Lahore
2018-2019
Pakistan Institute of Engineering and Applied Sciences
2014-2016
University of Antwerp
2014-2015
Abstract Copper-containing ternary transition-metals chalcogenide semiconductors are remarkable due to their potential employment in optical and electronic devices. Here, density functional theory calculations used study the structural, optoelectronic, thermoelectric properties of Cu 2 WZ 4 (Z = S, Se) materials. To accurately account for strongly linked combinations, advanced TB-mBJ approximations were these calculations. The formation energies computed predict stability. predicted band...
CdTe is a potential material for making efficient and stable solar cells. The present study aimed to systematically investigate the electronic, optical, thermoelectric properties of different structural phases using density functional theory. electronic were calculated modified Becke-Johnson with local approximation (LDA) correlation. band structure profiles showed direct at Γ-point α-cubic, β-hexagonal, γ-orthorhombic, an indirect type δ-trigonal phase from A-point valence maximum...
The band structures confirmed an indirect gap semiconductor nature. All the static dielectric constant values demonstrate a decreasing tendency with energy value.
The computed density of states for NaLiS material.
Abstract The thermoelectric performance and adjustable optical properties of chalcogenides are noteworthy. Density functional theory is employed to study the electrical, optical, novel CsYMSe3 (M = Cd, Zn) quaternary chalcogenides. A direct band gap nature was predicted based on profile study. Using PBE-GGA TB-mBJ, reported gaps 2.12 eV 2.92 for CsYZnSe3 2.11 3.07 CsYCdSe3, respectively. results showed that in both materials, hybridization orbital Cs-p/d Se-p were responsible energy losses....
The band structures confirmed a direct gap nature. static dielectric constant values demonstrate dropping tendency with the energy value. absorption of zinc-blende is significantly higher than wurtzite and tetragonal ZnTe.