A5026808153- Electron and X-Ray Spectroscopy Techniques
- Surface and Thin Film Phenomena
- Advanced Chemical Physics Studies
- Semiconductor materials and interfaces
- Semiconductor materials and devices
- Diamond and Carbon-based Materials Research
- X-ray Spectroscopy and Fluorescence Analysis
- Advanced Electron Microscopy Techniques and Applications
- Ion-surface interactions and analysis
- X-ray Diffraction in Crystallography
- Crystallography and Radiation Phenomena
- Semiconductor Quantum Structures and Devices
- Molecular Junctions and Nanostructures
- Metal and Thin Film Mechanics
- Advanced Materials Characterization Techniques
- Graphene research and applications
- Force Microscopy Techniques and Applications
- Chemical and Physical Properties of Materials
- Boron and Carbon Nanomaterials Research
- Photocathodes and Microchannel Plates
- Advanced X-ray Imaging Techniques
- Silicon and Solar Cell Technologies
- Electronic and Structural Properties of Oxides
- Nuclear materials and radiation effects
- Advanced Semiconductor Detectors and Materials
Tohoku University
2016-2025
National Institute of Advanced Industrial Science and Technology
2019
National Institute for Materials Science
2019
The University of Tokyo
2016
Material (Belgium)
1990-2007
X-ray photoelectron diffraction patterns of K $2p$ core levels have been measured for the Si(001) 2 \ifmmode\times\else\texttimes\fi{} 1-K surface. From a kinematical analysis patterns, it is concluded that sawtooth-type arrangement potassium double array present over substrate. This in disagreement with an existing assumption one dimensionality alkalimetal-Si(001) systems.
The submonolayer growth of Ge on single domain Si(001)-( $2\ifmmode\times\else\texttimes\fi{}1$) has been studied using high resolution photoemission by monitoring the $3d$ and Si $2p$ core levels as functions coverage, electron emission angle, annealing temperature. It is shown that initially grows asymmetric mixed Ge-Si dimers with occupying up atom down sites. Although this mode predominant to 0.8 monolayer pure Ge-Ge do occur well substitution second perhaps deeper layer Si. This...
Intensity variations of the dimer derived surface shifted Si $2p$ core level from single domain Si(001)-( $2\ifmmode\times\else\texttimes\fi{}1$) have been measured as a function azimuthal angle. Comparisons to multiple scattering calculations show that such measurements provide method for determining structural origins levels. In addition, analysis illustrates sensitivity this detailed structure around emitting atoms. case, determination geometry indicates bond is tilted...
Surface reconstructions of a submonolayer Sb/Si(111) system were investigated by low-energy electron diffraction and X-ray photoelectron spectroscopy. It has been found that the surface superstructures diffuse 2×2 (or three-domain 2×1), √3×√3, 5√3×5√3 7√3×7√3 are formed for Sb coverages around one monolayer.
The structure of an Al(111)3×3-Si surface was examined by combining data from positron diffraction and core-level photoemission spectroscopy. Analysis the rocking curves indicated that overlayer had a flat honeycomb lattice structure. Simulations Si spectra calculated via first principles one atoms in unit cell replaced Al atom. superstructure thus two-dimensional layer Al-embedded silicene on Al(111). locked icon Physics Subject Headings (PhySH)Electronic structureSurface & interfacial...
Abstract A proof-of-concept experiment for sub-millisecond temporal and 10 μ m order spatial resolution 4D X-ray tomography imaging using a multibeam system is reported. The 3D structure of tungsten wire during mechanical deformation was reconstructed super-compressed sensing-based algorithm from 28 projection images acquired simultaneously with 0.5 ms. does not require rotation the sample, source or detector. demonstrates potential improving time in observing non-repeatable dynamic...
Electron spectro-microscopic methods were applied as direct of determining the Schottky barrier heights (SBHs) and their spatial distribution for Au- Ag-Schottky junctions fabricated on an acid-treated oxygen-terminated diamond (001) substrate. Metal layers formed with two ranges thickness (3–5 nm thin 13–100 thick layers) both junctions. Leading X-ray photoelectron spectroscopy (XPS) core-level peaks either Au 4f7/2 or Ag 3d5/2 metal C 1s used measures SBH. For thick-metal samples,...
Because graphene stacked on hexagonal boron nitride (h-BN) exhibits high electron mobility, it is expected to be applied next-generation high-speed transistors and emitters. To further improve the performance of graphene/h-BN devices, necessary determine band alignment laminates. However, because mechanically peeled h-BN single crystals transferred onto Si substrates are small, pinpoint observation with ordinary photoelectron spectroscopy difficult. In this study, electric structure a...
A wide-terrace single-domain Si(001)2×1 surface has been used to prepare a Si(001)2×1-Cs and negative electron affinity (NEA) of O/Cs/Si(001)2×1. An X-ray photoelectron diffraction study reinforced the reliability Cs double-layer model for surface. NEA revealed that is preserved adsorption oxygen takes place in hollow site on level coplanar with lower layer.
Angle-resolved photoelectron spectroscopy (ARPES) using synchrotron radiation was employed to study the electronic structure of a well-ordered single-domain Si(001)2\ifmmode\times\else\texttimes\fi{}2-In surface. The existence five surface state bands, denoted as ${S}_{1}$, ${S}_{2}$, ${S}_{2}^{\ensuremath{'}}$, ${S}_{3}$, and ${S}_{3}^{\ensuremath{'}}$ is revealed within bulk band gap between 0.6 2.2 eV in binding energy (${E}_{B}$). dispersions these states are determined for most symmetry...
We have investigated quantitatively the geometry of mixed Ge-Si dimers on a single domain Si(001)2\ifmmode\times\else\texttimes\fi{}1 surface by azimuthal scanning core-level photoelectron diffraction. By analyzing Ge 3d diffraction patterns from Ge/Si(001) at 0.1 ML coverage using concentric-shell multiple-scattering algorithm for photon energies h\ensuremath{\nu}=90 and 136 eV, bond length tilt angle dimer are determined to be 2.43\ifmmode\pm\else\textpm\fi{}0.10 \AA{}...
The structure of the Si(111)-(5×2)-Au surface, one long-standing problems in surface science, has been solved by means Weissenberg reflection high-energy electron diffraction. arrangement Au atoms and their positions with respect to substrate were determined from a three-dimensional Patterson function lateral resolution 0.3 Å based on large amount diffraction data. new structural model consists six 5×2 unit, which agrees recently confirmed coverage 0.6 ML [I. Barke et al., Phys. Rev. B 79,...
The noble surface reconstructions of 2\ifmmode\times\else\texttimes\fi{}2, 2\ifmmode\times\else\texttimes\fi{}3, and 4\ifmmode\times\else\texttimes\fi{}3 induced by In adsorption on a Si(001) have been studied high-resolution photoelectron spectroscopy using synchrotron radiation. core-level shifts Si 2p were resolved, for the first time, group-III Si(001). It is shown that dimers not bonded to in 2\ifmmode\times\else\texttimes\fi{}3 phase are buckled symmetric both...