It has been confirmed by angle-resolved photoemission spectroscopy that decoupled quasi-free-standing monolayer graphene (QFMLG), obtained Sn intercalation between the buffer layer and 6H-SiC(0 0 1) substrate, is charge-neutral, i.e. Dirac point matches with Fermi level. By combined studies of scanning tunneling microscopy/spectroscopy core-level/valence-band on this system, it found intercalated atoms, bonding Si atoms top Si-C bilayer substrate comprise a hexagonal layer, which turns out...

High-resolution synchrotron-radiation photoemission studies of molecular ${\mathrm{O}}_{2}$ condensed on GaAs(110) at 20 K show that oxidation is a consequence photon irradiation. Core-level results for 2 L [1 langmuir (L)==${10}^{\mathrm{\ensuremath{-}}6}$ Torr sec] demonstrate the topmost layer As atoms initially involved in sequential, two-step reaction to produce ${\mathrm{As}}^{1+}$- and ${\mathrm{As}}^{3+}$-like oxides. These reactions are mediated by secondary electron capture which...

The narrow temperature-window for obtaining a crystalline MgO film on Fe(001) has been found using in-situ STM. When Mg was deposited at RT, post-oxidized 300 °C, and additionally annealed 400 an ultrathin formed. It concluded that, in order to grow high-quality Fe(001), it requires two steps, i.e., formation the substrate RT subsequent annealing proper temperature under O2 exposure atoms be oxidized crystallized their sites without being agglomerated.

Bifunctional effects of the Si atoms intercalated between n-type 6H–SiC(0001) substrate and zero layer have been disclosed by scanning tunneling microscopy, low-energy electron diffraction, high-resolution synchrotron photoemission spectroscopy angle-resolved spectroscopy. As a result intercalation, an ordered interfacial composed adlayer adatoms with dangling bonds has formed under quasi-free-standing epitaxial graphene (EG). It turns out that SiC(0001) band bending is determined Fermi...

The interfacial reaction and Fermi-level movement, which are induced by thin uniform Ni Au layers, were investigated in situ using synchrotron photoemission spectroscopy. study showed that the GaN surface layer was instantly disrupted as result of deposition, dissociated N Ga localized at interface without formation any specific nitride species. two Fermi levels n- p-type simultaneously located near 1.9 eV above valence-band maximum, where high-density gap states generated deposition....

We report surface oxidation induced by (1--8) eV electrons incident on ${\mathrm{O}}_{2}$ condensed InP(110) at 30 K. The measured reaction cross sections are very much energy dependent with values of (8\ifmmode\pm\else\textpm\fi{}4)\ifmmode\times\else\texttimes\fi{}${10}^{\mathrm{\ensuremath{-}}18}$, (1\ifmmode\pm\else\textpm\fi{}0.5)\ifmmode\times\else\texttimes\fi{}${10}^{\mathrm{\ensuremath{-}}17}$,...

Studies of ${\mathrm{O}}_{2}$ interaction with GaAs(110) at 20 K show dynamic conversion multilayers physisorbed into ${\mathrm{As}}_{2}$${\mathrm{O}}_{3}$-like oxides due to the synchrotron radiation beam used acquire photoemission data (h\ensuremath{\upsilon}=90 eV, photon flux \ensuremath{\sim}2\ifmmode\times\else\texttimes\fi{}${10}^{13}$ ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}2}$ ${\mathrm{sec}}^{\mathrm{\ensuremath{-}}1}$). A lower coordination As and O is observed precursor...

Surface nanopatterns formed by ion beam sputtering (IBS) frequently include a high density of structural defects, which seriously limit their practical applications. Recent theoretical work [M. P. Harrison and R. M. Bradley, Phys. Rev. E 93, 040802(R) (2016)], based on the anisotropic Kuramoto-Sivashinsky (aKS) equation, proposes that rocking substrate during IBS can produce defect-free patterns under certain requirements. We find experimentally, via low-energy ${\mathrm{Kr}}^{+}$...

The nanoscale patterns produced by bombardment of the (100) surface silicon with a 2 keV Kr ion beam are investigated both experimentally and theoretically. In our experiments, we find that observed at high fluences depend sensitively on angle incidence Θ. For Θ values between 74° 85°, observe five decidedly different kinds morphologies, including triangular nanostructures traversed parallel-mode ripples, long parallel ridges decorated short-wavelength remarkable mesh-like morphology....

Initial stages of antimony (Sb) adsorption on the $\mathrm{Si}(5\phantom{\rule{0.3em}{0ex}}5\phantom{\rule{0.3em}{0ex}}12)\text{\ensuremath{-}}2\ifmmode\times\else\texttimes\fi{}1$ surface have been studied by scanning tunneling microscopy in order to understand interfacial reaction between adsorbed Sb atoms and Si template with one-dimensional (1D) symmetry. It has found that there are two distinct steps, indiffusion preferential adsorption, at initial held...

The adsorption structures of benzene and pyridine on Si(5 5 12)-2 × 1 were studied at 80 K by using a low-temperature scanning tunneling microscope density functional theory calculations. These are different from those observed low-index Si surfaces: molecules exclusively bind to two adatoms, that is, with di-σ bonds between carbon atoms silicon leading the loss aromaticity; in contrast, interact adatom(s) through either Si−N dative bonding or bonds. Dative configurations aromaticity...

Low-energy electron diffraction $I/V$ analyses reveal that Mn thin films deposited on Ag(001) at room temperature form substitutional, ordered, bilayer Mn${}_{50}$Ag${}_{50}$ surface alloys. The atoms in this structure have local magnetic moments of considerable value, as judged from the $3s$ core level spectra; these are effective formation ordered alloy. Ab initio total energy calculations been done and results confirmed experimental observations.

The thermal nitridation of GaAs(100) with ammonia was investigated by synchrotron radiation photoemission spectroscopy and atomic force microscope. This study revealed the chemical composition, states, morphological changes in nitridated surface layer. We observed that can be decomposed to an activated nitrogen atom above 700 °C forming GaN on surface. Thermally layers were composed metallic Ga islands are elongated along [011] direction relax tensile strain [01̄1] direction. As temperature...

We have studied the interaction of ${\mathrm{N}}_{2}$O with GaAs(110) at 25 K as a function photon beam exposure, using photoemission to detect and characterize reactions. The results show that x rays (h\ensuremath{\nu}=1486 1253 eV, flux 6.8\ifmmode\times\else\texttimes\fi{}${10}^{9}$ 2.3\ifmmode\times\else\texttimes\fi{}${10}^{9}$ photons ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}2}$ ${\mathrm{sec}}^{\mathrm{\ensuremath{-}}1}$) induce dissociation surface oxidation while ultraviolet do not...

Graphene can acquire salient properties by the intercalated nano structures, and to functionalize graphene as designed, understanding growth kinetics of structures is a prerequisite. In that regards, Kr atoms are selectively just below surface C(0001) incidence low energy ions. The encapsulated investigated both scanning tunneling microscopy molecular dynamics simulations. intercalation proceeds via defect sites, such vacancies. At room temperature, thermal diffusion almost frustrated strain...