A5075506929- Molecular Junctions and Nanostructures
- Quantum and electron transport phenomena
- Advanced Memory and Neural Computing
- Semiconductor materials and devices
- Force Microscopy Techniques and Applications
- Electronic and Structural Properties of Oxides
- Semiconductor materials and interfaces
- Electrochemical Analysis and Applications
- Surface and Thin Film Phenomena
- Graphene research and applications
- Electrocatalysts for Energy Conversion
- Photonic and Optical Devices
- Neural Networks and Reservoir Computing
- Ferroelectric and Negative Capacitance Devices
- Advanced Physical and Chemical Molecular Interactions
- Electrochemical sensors and biosensors
- Gas Sensing Nanomaterials and Sensors
- Quantum Computing Algorithms and Architecture
- Neuroscience and Neural Engineering
- Plasmonic and Surface Plasmon Research
- Advancements in Battery Materials
- Chemical and Physical Properties of Materials
- Mechanical and Optical Resonators
- Neural dynamics and brain function
- Advanced Materials Characterization Techniques
Karlsruhe University of Education
2006-2023
Karlsruhe Institute of Technology
2008-2023
Institute of Applied Physics
2012
Center for NanoScience
2008
FZI Research Center for Information Technology
2006
Applied Materials (Germany)
2004
An atomic-scale quantum conductance switch is demonstrated that allows us to open and close an electrical circuit by the controlled reproducible reconfiguration of silver atoms within junction. The only movable parts are contacting atoms. entirely external electrochemical voltage applied independent third gate electrode. Controlled switching was performed between a quantized, electrically conducting "on state" exhibiting G(0)=2e(2)/h ( approximately 1/12.9 kOmega) or preselectable multiples...
The controlled fabrication of actively switchable atomic-scale devices, in particular transistors, has remained elusive to date. Here, we explain the operation an three-terminal device by a novel switching mechanism bistable, self-stabilizing reconstruction electrode contacts at atomic level: While is manufactured electrochemical deposition, it operates entirely on basis mechanical effects solid−liquid interface. We analyze mechanically and thermally stable metallic junctions with predefined...
Multilevel logic and storage devices on the atomic scale are of great interest as they allow more efficient data processing with a smaller number logical gates. Here we demonstrate multilevel quantum transistor, allowing for gate-controlled switching between different quantized conducting states providing basis future development novel ultra-small quantum- electronic devices.
The controlled fabrication of well-ordered atomic-scale metallic contacts is great interest: it expected that the experimentally observed high percentage point with a conductance at non-integer multiples quantum G_0 = 2e^2/h in simple metals correlated to defects resulting from process. Here we demonstrate combined electrochemical deposition and annealing method which allows pre-selectable integer conductance. measurements on silver are compared tight-binding-like calculations modeled...
Atomic-sized lead (Pb) contacts are deposited and dissolved in an electrochemical environment, their transport properties measured. Due to the fabrication process, we obtain mechanically unstrained conductance histograms with sharply resolved, individual peaks. Charge calculations based on density functional theory (DFT) for various ideal Pb contact geometries good agreement experimental results. Depending atomic configuration, single-atom-wide of one same metal yield very different values.
Memristive devices have attracted significant attention due to their downscaling potential, low power operation, and fast switching performance. Their inherent properties make them suitable for emerging applications such as neuromorphic computing, in-memory reservoir computing. However, the different demand either volatile or nonvolatile operation. In this study, we demonstrate how compliance current specific material choices can be used control volatility nonvolatility of memristive...
Electrochemical gating permits the observation of few-atom processes in contact reconstruction. We monitor junction conductance during opening and closing an atomic-scale metallic use this as instantaneous probe structural switching process. observe clear correlations quantum a subsequent events, demonstrating memory effects at atomic scale. These experimental observations are supported by numerical simulations which show conservation reconstruction process across several cycles. results...
Abstract The single‐atom transistor represents a quantum electronic device at room temperature, allowing the switching of an electric current by controlled and reversible relocation one single atom within metallic point contact. So far, operates applying small voltage to control electrode or “gate” aqueous electrolyte. Here, operation atomic in quasi‐solid state is demonstrated. Gelation pyrogenic silica transforms electrolyte into state, exhibiting cohesive properties solid diffusive...
We investigated copper as a working material for metallic atomic-scale transistors and confirmed that can be fabricated operated electrochemically in electrolyte (CuSO 4 + H 2 SO ) bi-distilled water under ambient conditions with three microelectrodes (source, drain gate). The electrochemical switching-on potential of the transistor is below 350 mV, switching-off between 0 −170 mV. current above 1 μA, which compatible semiconductor devices. Both sign amplitude voltage applied across source...
One focus of nanoelectronics research is to exploit the physical limits in size and energy efficiency. Here, we demonstrate a device form fully metallic atomic-scale transistor based on lead (Pb) single-atom quantum point contact. The atomic configuration contact determines conductance Pb transistor. multiplicity has been confirmed by performing switching between an electrically nonconducting ``off-state'' conducting ``on-states'' at $1{\mathrm{G}}_{0}({\mathrm{G}}_{0}=2{e}^{2}/h$, where $e$...
We report on the electronic transport through nanoscopic metallic contacts under influence of external light fields. Various processes can be relevance here, whose underlying mechanisms studied by comparing different kinds atomic contacts. For this purpose two contacts, which were established electrochemical deposition, forming a gate-controlled quantum switch (GCQS), have been studied. demonstrate that in these thermal effects resulting from local heating due to incident light, namely...
The controlled fabrication of actively switchable atomic-scale devices, in particular transistors, has remained elusive to date. Here we explain operation an three-terminal device by a novel switching mechanism bistable, self-stabilizing reconstruction the electrode contacts at atomic level: While is manufactured electrochemical deposition, it operates entirely on basis mechanical effects solid-liquid interface. We analyze mechanically and thermally stable metallic junctions with predefined...
Here, we present a silver atomic-scale device fabricated and operated by combined technique of electrochemical control (EC) mechanically controllable break junction (MCBJ). With this EC-MCBJ technique, can perform bistable quantum conductance switching point contact (QPC) in an environment at room temperature. Furthermore, the QPC be controlled both electrochemically, operating mode changed from 'electrochemical' to 'mechanical', which expands for controlling QPCs. These experimental results...
Abstract After decades of continuous scaling, further advancement complementary metal‐oxide‐semiconductor (CMOS) technology across the entire spectrum computing applications is today limited by power dissipation, which scales with square supply voltage. Here, an atomic‐scale tin transistor demonstrated to perform conductive switching between bistable configurations on/off potentials ≤ 2.5 mV in magnitude. In addition low operation voltage, channel length determined experimentally and...
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