A5031766629- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- Semiconductor Quantum Structures and Devices
- ZnO doping and properties
- Photocathodes and Microchannel Plates
- Advancements in Solid Oxide Fuel Cells
- Recycling and Waste Management Techniques
- Electronic and Structural Properties of Oxides
- Fuel Cells and Related Materials
- Acoustic Wave Resonator Technologies
University of California, Santa Barbara
2014-2018
American Ceramic Society
2005
Northwestern University
2005
Screen printing of thin yttria‐stabilized zirconia (YSZ) electrolytes onto NiO–YSZ anode supports was studied. Experimental parameters studied included screen ink composition and rheology, printer settings, support thickness pre‐fire temperature, sintering ramp rate. Viscoelastic rheology the inks versus solids loading measured correlated with print results. Increasing from 20 to 40 vol% increased roughness fired layers, but did not affect film density. Bi‐layer curvature after co‐firing...
Significant gains in energy savings now underway can be traced to a single invention—the blue light-emitting diode. GaN-based LED technology not only resulted efficient white light sources, but continues enable host of applications and scientific inquiries. The researchers primarily responsible for the development were awarded 2014 Nobel Prize Physics.
Erhebliche Energieeinsparungen sind dank einer einzigen Erfindung möglich: der blauen Leuchtdiode. Die Forschung an GaN-basierte LEDs resultierte nicht nur in effizienten weißen Lichtquelle, sondern hat viele weitere Anwendungs- und Forschungsperspektiven eröffnet. Entwicklung LED erster Linie beteiligten Forscher wurden mit dem Nobelpreis für Physik 2014 ausgezeichnet.