A5102890292- Magnetic and transport properties of perovskites and related materials
- Multiferroics and related materials
- Electronic and Structural Properties of Oxides
- Advanced Condensed Matter Physics
- Magnetic properties of thin films
- 2D Materials and Applications
- Advanced Memory and Neural Computing
- ZnO doping and properties
- Ferroelectric and Piezoelectric Materials
- Magneto-Optical Properties and Applications
- Advancements in Solid Oxide Fuel Cells
- Topological Materials and Phenomena
- Ferroelectric and Negative Capacitance Devices
- Physics of Superconductivity and Magnetism
- Theoretical and Computational Physics
- Advancements in Semiconductor Devices and Circuit Design
- Chalcogenide Semiconductor Thin Films
- Transition Metal Oxide Nanomaterials
- Inorganic Chemistry and Materials
- Nanoporous metals and alloys
- Surface and Thin Film Phenomena
- Advanced Research in Systems and Signal Processing
- Neuroscience and Neural Engineering
- Dielectric properties of ceramics
- Perovskite Materials and Applications
National University of Singapore
2023-2025
Tsinghua University
2016-2024
Chinese Academy of Sciences
2018-2022
State Council of the People's Republic of China
2021
University of Chinese Academy of Sciences
2018-2020
University of Jinan
2013
Abstract The electrical control of the non-trivial topology in Weyl antiferromagnets is great interest for development next-generation spintronic devices. Recent studies suggest that spin Hall effect can switch topological antiferromagnetic order. However, switching efficiency remains relatively low. Here, we demonstrate effective manipulation order semimetal Mn 3 Sn using orbital torques originating from either metal or oxide CuO x . Although convert current to on its own, find inserting a...
As unique building blocks for next-generation optoelectronics, high-quality 2D p-n junctions based on semiconducting transition metal dichalcogenides (TMDs) have attracted wide interest, which are urgent to be exploited. Herein, a novel and facile electron doping of WSe2 by cetyltrimethyl ammonium bromide (CTAB) is achieved the first time form intramolecular junction with superior optoelectronic properties. Efficient manipulation charge carrier type density in TMDs via transfer between Br-...
With zero net magnetic moment for ultrafast switching and high resistance to interference, antiferromagnets are of keen interest next-generation data storage. This study demonstrates analyzes current-induced antiferromagnetic in Mn${}_{2}$Au films at room temperature, with different film orientations exhibiting various characteristics. strong orientation dependence adds another dimension our thinking about spin-orbit torque, makes this alloy a versatile basis spintronics.
Brain-inspired neuromorphic computing has attracted widespread attention owing to its ability perform parallel and energy-efficient computation. However, the synaptic weight of amorphous/polycrystalline oxide based memristor usually exhibits large nonlinear behavior with high asymmetry, which aggravates complexity peripheral circuit system. Controllable growth conductive filaments is highly demanded for achieving linear conductance modulation. stochastic filament in commonly used makes it...
The anomalous Hall effect (AHE) is a transport phenomenon typically observed in ferromagnetic materials with broken time-reversal symmetry T. Recently, the AHE has been several archetype antiferromagnets (AFMs), including altermagnets, and AFMs noncollinear, noncoplanar or canted Néel order, due to breaking of joint sublattice-transposing operation. However, generally not allowed collinear constraints. Here, we report observation AFM L10-IrMn (001) film. Scanning transmission electron...
Abstract Magnetotransport is at the center of spintronics. Mn 3 Sn single crystals, an antiferromagnet that has a noncollinear 120° spin order, exhibit large anomalous Hall effect (AHE) room temperature. But such behavior remained elusive in epitaxial films. Here observation AHE‐like with in‐plane magnetic field up to temperature quasi‐epitaxial thin films, prepared by magnetron sputtering, reported. The growth both (1120)‐ and (0001)‐oriented films provides unique opportunity for comparing...
SrFeOx (SFOx) compounds exhibit ionic conduction and oxygen-related phase transformation, having potential applications in solid oxide fuel cells, smart windows, memristive devices. The transformation SFOx typically requires a thermal annealing process under various pressure conditions, hindering their practical applications. Here, we have achieved reversible transition from brownmillerite (BM) to perovskite (PV) SrFeO2.5 (SFO2.5) films through liquid (IL) gating. real-time is imaged using...
Topological spin textures as an emerging class of topological matter offer a medium for information storage and processing. The recently discovered Hall effect (THE) is considered fingerprint electrically probing non-trivial spin-textures. But the origin THE in oxides has remained elusive. Here we report observation ultrathin (unit cells. u.c.) 4d ferromagnetic SrRuO3 films grown on SrTiO3(001) substrates, which can be attributed to chiral ordering structure (i.e., skyrmion-like) single...
Incorporating hydrogen into transition-metal oxides (TMOs) provides a facile and powerful way to manipulate the performances of TMOs, thus numerous efforts have been invested in developing hydrogenation methods exploring property modulation via doping. However, distribution ions, which is key factor determining physicochemical properties on microscopic scale, has not clearly illustrated. Here, focusing prototypical perovskite oxide (NdNiO3 La0.67Sr0.33MnO3) epitaxial films, we find that...
Understanding the behavior of oxygen vacancies in an oxide multilayer electric field continues to be challenging, due their complex transport between layers. In this study, a cycle electronic phase transitions SrCoO${}_{3-x}$/La${}_{0.45}$Sr${}_{0.55}$MnO${}_{3-y}$ heterostructure is realized by sweeping applied voltage, confirming that field-induced formation and annihilation O chiefly determined energies differences Gibbs free energies. These results yield important insight into control...
Manipulation of oxygen vacancies via electric-field-controlled ionic liquid gating has been reported in many model systems within the emergent fields oxide electronics and iontronics. It is then significant to investigate vacancy formation/annihilation migration across an additional ferroelectric layer with gating. Here, we report that a combination gating, remote control magnetic phase transition can be achieved SrCoO2.5 films capped ultrathin BaTiO3 at room temperature. The acts as atomic...
Transition-metal perovskite oxides constitute a series of functional material systems for electronics, catalysis and energy-conversion processes, in which oxygen migration evolution play key role. However, the stable metal-oxygen (M-O) bond forms large energy barrier inhibiting ion diffusion. Therefore, seeking efficient facile approaches to accelerate kinetics has become significant issue. Here, interaction (interfacial charge transfer cooperative bonding) between noble metal (Pt, Ag)...
Abstract SrRuO 3 (SRO)-based heterostructures have attracted much attention for potential applications such as electrodes, oxide spintronics, topological electronics and electrocatalytic function mainly due to the strong spin–orbit coupling, itinerant ferromagnetism with 4 d electrons, high metallic conductivity, perpendicular magnetic anisotropy rich oxygen octahedral distortion of SRO. Here, this work aims offer a timely systematic review on SRO-based its emerging opportunities in...
Voltage control of magnetism has been considered and proven to be an efficient actuation protocol boost energy efficiency in a widespread range spintronic devices. In particular, the study voltage-induced changes by magneto-ionic effect rapidly accelerated during past few years due versatile advantages effective control, non-volatile nature, low-power cost, etc. this perspective, we briefly outline recent research progress on voltage-controlled using two representative dielectric gating...
Unidirectional magnetoresistance (UMR) has been intensively studied in ferromagnetic systems, which is mainly induced by spin-dependent and spin-flip electron scattering. Yet, UMR antiferromagnetic (AFM) systems not fully understood to date. In this work, we reported a YFeO3/Pt heterostructure where YFeO3 typical AFM insulator. Magnetic-field dependence temperature of transport measurements indicate that magnon dynamics interfacial Rashba splitting are two individual origins for UMR,...
In order to advance the silicon integrated circuit technology, researchers have been searching for memory and logic devices with new physical state variables other than charge. Spin device that adds one degree of freedom-electron spin charge has considered as a promising candidate due its low power consumption, built-in memory, high scalability. Here, we demonstrate variable – current direction on sample can be introduced into operation. The is vector. For various input currents along...
Spin-polarized two-dimensional electron gas (2DEG) at the interface of two insulating perovskite oxides has been a focus intensive studies in recent years. So far all attempts to construct magnetic 2DEG are based on selection an appropriate buffer layer or cap $\mathrm{SrTi}{\mathrm{O}}_{3}$-based heterostructures, and effect thus produced is indirect weak. Here, we fabricated Fe-doped $\mathrm{SrTi}{\mathrm{O}}_{3}$ that superparamagnetic rather than diamagnetic like...
Interfaces between materials provide an intellectually rich arena for fundamental scientific discovery and device design. However, the frustration of magnetization conductivity perovskite oxide films under reduced dimensionality is detrimental to their performance, preventing active low-dimensional application. Herein, by inserting ultrathin 4d ferromagnetic SrRuO3 layer ferroelectric BaTiO3 layers form a sandwich heterostructure, we observe enhanced physical properties in films, including...
The geometrical control of oxygen vacancy channels (OVCs) and their orientation in brownmillerite (BM) structures provide a platform for tailoring the physical properties. growth with different OVCs implies huge change lattices that limit epitaxial growth. Here we achieve $\mathrm{SrFe}{\mathrm{O}}_{2.5}$ ($\mathrm{SF}{\mathrm{O}}_{2.5}$) films horizontal or vertical OVCs, irrespective substrates (001) $\mathrm{SrTi}{\mathrm{O}}_{3},...
Ferrimagnetic insulators (FiMI) have been intensively used in microwave and magneto-optical devices as well spin caloritronics, where their magnetization direction plays a fundamental role on the device performance. The is generally switched by applying external magnetic fields. Here we investigate current-induced spin-orbit-torque switching of ${\mathrm{Y}}_{3}{\mathrm{Fe}}_{5}{\mathrm{O}}_{12}$ ($\mathrm{YIG}$)/$\mathrm{Pt}$ bilayers with in-plane anisotropy, detected Hall...
Antiferromagnetic (AFM) materials, with robust rigidity to magnetic field perturbations and ultrafast spin dynamics, show great advantages in information storage have developed into a fast-emerging of AFM spintronics. However, direct characterization alignments films has been challenging, their manipulation by lattice distortion proximity is inevitably accompanied ``ferromagnetic'' features within the matrix. Here we resolve $G$-type structure $\mathrm{SrCo}{\mathrm{O}}_{2.5}$ find that...