A5004943184- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Radiation Effects in Electronics
- CCD and CMOS Imaging Sensors
- Thin-Film Transistor Technologies
- Parallel Computing and Optimization Techniques
- Embedded Systems Design Techniques
KU Leuven
2022-2023
University of Malaya
2014
Intensive scaling for VLSI circuits is a key factor gaining outstanding performance. However, this has huge negative impact on the circuit reliability, as it increases undesired effect of aging degradation ultradeep submicrometer technologies. Nowadays, Bias Temperature Instability (BTI) process major reliability. This paper presents comprehensive framework that assists in designing fortified against BTI degradation. The contains: 1) novel level techniques eliminate (these successfully...
Integrated circuits (ICs) are a keystone for most critical applications operating in high-level radiation environments, spanning from high-energy nuclear up to space applications. The long-term reliability of these is essential safe operation. However, the effects ICs commonly investigated using fresh circuits, leaving coupled effect and aging degradation unknown. This article investigates impact negative bias temperature instability (NBTI) mechanism on heavy-ion single event upset (SEU)...
As FinFET pushes to replace planar MOSFET, concern rises about its reliability. This research detects the more robust technology against BTI aging degradation, through investigating effect at device level: using an adequate Reaction Diffusion model, and circuit level for 16nm nodes. proves be robust, as delay due is lower by 26% compared MOSFET.
Intensive CMOS scaling is a significant factor for achieving superior performance. However, this has an enormous negative effect on the circuit reliability, as it increases impact of variability. The stochastic nature variability made advanced technologies characterization challenging, there crucial necessity to characterize significantly large number devices have precise characterization. This article presents results 28-nm ultra-thin body and buried oxide (UTBB) fully depleted silicon...
A customed designed fault-tolerant high-performance microprocessor optimized for safety critical missions is presented. The multicore implements the RISC-V ISA. Long-term radiation assessment 28-nm FD-SOI technology was conducted to guide design phase.