A5069299106- solar cell performance optimization
- Chalcogenide Semiconductor Thin Films
- Semiconductor Quantum Structures and Devices
- Quantum Dots Synthesis And Properties
- Advanced Electron Microscopy Techniques and Applications
- Silicon and Solar Cell Technologies
- Thermal Radiation and Cooling Technologies
- Photonic and Optical Devices
Fraunhofer Institute for Solar Energy Systems
2022-2025
III-V compound semiconductors provide a high degree of flexibility in bandgap engineering and can be realized through epitaxial growth quality. This enables versatile spectral matching photovoltaic absorber materials as well the fabrication complex layer structures vertically stacked subcells tunnel junctions. work presents progress two fields applications photovoltaics: concentrator solar cells photonic power converters. We present latest results advancing energy conversion efficiencies to...
Photonic power converters (PPCs) are devices that convert narrowband light at specific wavelengths into electrical energy based on the photovoltaic effect. They used in optical transmission systems, which offer advantages over conventional wire connections applications. GaInP PPCs show promise for underwater communication and transfer due to their high bandgap energy, enables efficient photon conversion visible spectrum. In this work, we compare rear-heterojunction homojunction designs PPC...
The reduction of the series resistance in multi‐junction solar cells is high importance for attaining peak efficiencies concentrator photovoltaics. This study showcases strategies to reduce sheet uppermost subcell a direct wafer bonded four–junction devices, since it contributes significantly resistance. Therefore, electron mobilities n–type AlGaInP, lattice matched GaAs, are investigated across bandgap energies between 1.9 and 2.1 eV various doping concentrations. resistances AlGaInP rear...
In this work an inverted metamorphic four junction (IMM4J) solar cell with 30.9% conversion efficiency in beginning of life conditions under the AM0 (1367 W/m 2 ) spectrum is presented. Additionally, our newest improved IMM3J cell, consisting Ga 0.51 0.49 P/GaAs/Ga 0.73 0.27 As subcells, 30.6% also shown. The IMM4J cells consist Al 0.05 0.46 P/Al 0.14 0.86 As/Ga 0.89 0.11 subcells and are epitaxially grown by metal organic vapor phase epitaxy (MOVPE) on a GaAs substrate. These IMM achieve...
In this work we report on a procedure to increase the reproducibility of multi-junction solar cell growth. This is achieved by applying systematic offset room-temperature photoluminescence measurement match required band gap for obtaining current as simulated optical modelling. We found that difference in extracted from and external quantum efficiency respectively depends material system under investigation. With help procedure, modelled built 4-junction reaches power conversion 43.6 %...