About
Contact & Profiles
A5103062137
Research Areas
- Surface and Thin Film Phenomena
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Quantum and electron transport phenomena
National Institute of Standards and Technology
2022
University of Colorado Boulder
2022
A merged-element transmon (MET) device based on silicon (Si) fins is proposed, and the first steps to form such a “FinMET” are demonstrated. This new application of fin technology capitalizes anisotropic etch Si(111) relative Si(110) define atomically flat, high aspect ratio Si tunnel barriers with epitaxial superconductor contacts parallel sidewall surfaces. process circumvents challenges associated growth low-loss insulating lattice matched superconductors. By implementing low-loss,...
10.1063/5.0104950
article
EN
publisher-specific-oa
Applied Physics Letters
2022-08-08
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