A5100357270- GaN-based semiconductor devices and materials
- Advanced Memory and Neural Computing
- Ga2O3 and related materials
- Acoustic Wave Resonator Technologies
- Conducting polymers and applications
- Perovskite Materials and Applications
- Copper Interconnects and Reliability
- Advanced Sensor and Energy Harvesting Materials
- 2D Materials and Applications
- Neuroscience and Neural Engineering
- Neural dynamics and brain function
- Semiconductor materials and devices
- Computational Geometry and Mesh Generation
- Photonic and Optical Devices
- Indoor and Outdoor Localization Technologies
- Metal and Thin Film Mechanics
- Caching and Content Delivery
- Corrosion Behavior and Inhibition
- Spectroscopy Techniques in Biomedical and Chemical Research
- Fuel Cells and Related Materials
- Metallurgical and Alloy Processes
- Energy Harvesting in Wireless Networks
- Advancements in Solid Oxide Fuel Cells
- Electronic Packaging and Soldering Technologies
- Silicon Carbide Semiconductor Technologies
National Applied Research Laboratories
2024
Jiangsu University
2021-2022
Xiangtan University
2014-2021
National Tsing Hua University
2021
National University of Defense Technology
2019
National Yang Ming Chiao Tung University
2010-2017
Powerchip (Taiwan)
2016
University of Michigan
2008
Feng Chia University
2006
Abstract In this study, epitaxial AlN films were deposited on 6” p-type Si(111) substrates through RF/DC magnetron sputtering with an RF bias and two N2/Ar flow rates. We discussed the effects of nitrogen rate microstructure crystal domains AlN/Si(111) at 800°C. The in-plane XRD TEM results showed that single-domain was epitaxially grown in a ratio 0.43. Also, relationships between film substrate determined to be AlN(0002)//Si(111) AlN[11-20]//Si[220]. leverage optimized process parameters...
Methylammonium lead triiodide perovskite (CH₃NH₃PbI₃, MAPbI₃) has been emerging as an easy processing and benign defect material for optoelectronic devices. Fiber-like materials are especially in demand flexible applications. Here we report on a kind of polyacrylonitrile (PAN)/MAPbI₃ composite fiber, which was electrospun from the mixing solution PAN MAPbI₃. The absorption edge optical gap PAN/MAPbI₃ fibers can be easily tuned ratio changes. Both moisture stability thermal improved with...
In this study, hexagonal AlN (h-AlN) thin films were grown on a two-dimensional (2D)-WS2/Al2O3 substrate by radio frequency–metalorganic molecular beam epitaxy at 800 °C. We examined the influence of various RF plasma powers synthesis and characterization AlN/WS2 heterostructures, as well their properties, for optoelectronic applications. In-plane grazing incidence X-ray diffraction results indicated that h-AlN 2D-WS2/Al2O3(0001) are oriented along (100) (110) planes, indicating epitaxial...
Intermittent systems enable continuous and accumulative process execution under constraint or unstable power supply. To intermittent computing, status data are typically checkpointed from volatile memory (VM) to nonvolatile (NVM) before running out of power. After resumes, these logged can be loaded back NVM VM for execution. Nevertheless, existing approaches rarely considered the energy consumed during moving may waste precious resource over movement, instead computation. Such observation...
Abstract This paper presents an algorithm for positioning circles in a given region to maximise the covered area. Our has applications wireless networks, such as number of mobile stations region, one goal which is cover largest area possible. Although evaluation function value, i.e., total area, difficult, we bypass this difficulty by calculating gradient directly. As long nodes continuously move directions that guarantee increasing coverage, configuration node positions corresponding...
With the further research of artificial synaptic transistors, there are increasing interests in eco-friendly electronics that biocompatible and biodegradable. There also moving ions albumen a variety hydrophilic groups promoting mobility ions. Therefore, albumen-gate based transistors have been proposed. Here, albumen-based electrolyte film shows strong electrostatic modulation behavior with electric double-layer capacitance ∼3.8 μF cm−2 at 1 Hz. The transistor exhibits high on/off ratio...
Eco‐friendly “green” electronics are attracting increasing interest in recent years. For example, neural prostheses, nerve implants, drug delivery devices, and diagnostic electronics, as well some green materials (paper, silk, polysaccharides) with bioabsorbable biocompatible transistors, load inverters, other devices. Here, biodegradable polyvinyl alcohol (PVA)/graphene oxide (GO) electric double‐layer (EDL) transistors prepared on glass substrates. PVA film treated GO solution is used a...
The microstructures of electrochemical plated (ECP) Cu films are investigated by various plating current and the rotation speed wafer. Decreasing increases impurity concentration in an ECP film. content is also raised elevating grain size texture behavior film affected distribution.
In this study, we report the growth and characterization of semipolar (1013) InN films grown on LaAlO3(112) substrate by metalorganic molecular beam epitaxy. were at various temperatures in range 465–540 °C. Structural optical properties investigated high resolution X-ray diffraction, scanning electron microscopy, photoluminescence measurements. The results show that layers can be 510 °C with full-width half maximum rocking curve about 1400 arcsec mobility 494 cm2 V-1 s-1.
Abstract not Available.
Epitaxial semipolar InN() crystals were grown on a LaAlO3(112) substrate using radio frequency plasma-assisted molecular beam epitaxy without any interlayer. The lattice mismatch between InN and LaAlO3 was estimated to be −7.75% along the []InN direction 0.2% direction. film is epitaxic with substrate, orientation relationships ∥ []LAO. appears () plane orientated, two types of domains. Semipolar layers can at 510 °C show X-ray rocking curve FWHMs 1830 1408 arcsec for InN(0002) InN(),...