A. Lounis

ORCID: 0000-0003-4066-2087
Publications
Citations
Views
---
Saved
---
About
Contact & Profiles
Research Areas
  • Particle physics theoretical and experimental studies
  • High-Energy Particle Collisions Research
  • Particle Detector Development and Performance
  • Quantum Chromodynamics and Particle Interactions
  • Dark Matter and Cosmic Phenomena
  • Computational Physics and Python Applications
  • Neutrino Physics Research
  • Cosmology and Gravitation Theories
  • Radiation Detection and Scintillator Technologies
  • Distributed and Parallel Computing Systems
  • CCD and CMOS Imaging Sensors
  • Medical Imaging Techniques and Applications
  • Astrophysics and Cosmic Phenomena
  • Nuclear physics research studies
  • advanced mathematical theories
  • Black Holes and Theoretical Physics
  • Atomic and Subatomic Physics Research
  • Advancements in Semiconductor Devices and Circuit Design
  • Nuclear reactor physics and engineering
  • Photonic and Optical Devices
  • Parallel Computing and Optimization Techniques
  • Silicon and Solar Cell Technologies
  • Particle accelerators and beam dynamics
  • Advanced MEMS and NEMS Technologies
  • Atomic and Molecular Physics

Université Paris-Saclay
2016-2025

Laboratoire de Physique des 2 Infinis Irène Joliot-Curie
2019-2025

Institut National de Physique Nucléaire et de Physique des Particules
2015-2025

Centre National de la Recherche Scientifique
2016-2025

The University of Adelaide
2018-2023

Northern Illinois University
2023

Université de M'Sila
2021

GANIL
2009-2020

University of Calabria
2020

Université Paris-Sud
2010-2019

It is shown that a simplified Glauber approach using an experimental nucleon-nucleon forward amplitude and Gaussian nucleus density reproduces fairly well both nucleus-nucleus reaction cross sections elastic scattering differential over broad energy range.NUCLEAR REACTIONS $^{12}\mathrm{C}$+$^{12}\mathrm{C}$ scattering, $\frac{E}{A}=25, 30, \mathrm{and} 85$ MeV, optical limit of theory, section.

10.1103/physrevc.28.1970 article EN Physical Review C 1983-11-01

We use ac and dc technology computer assisted design simulations to study the effects of radiation damage in planar pixel sensors ATLAS inner detector upgrade, particular on active area breakdown protection different multiguard rings structure. Using a model defect introduction into silicon band gap that agrees well with simulation up fluences 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">15</sup> n <sub...

10.1109/tns.2009.2034002 article EN IEEE Transactions on Nuclear Science 2009-12-01

Electric field magnitude and depletion in the bulk of silicon pixel detectors, which influence its breakdown behaviour, was studied using finite-element method to solve drift-diffusion equation coupled Poisson's a simplified two dimensional model ATLAS sensor. Based on this model, number guard rings dead edges width were modified investigate their detector's at edge internal electrical distribution. Finally, 3 level implemented into simulation study behaviour such detector under different...

10.1088/1748-0221/4/03/p03025 article EN Journal of Instrumentation 2009-03-26

10.1016/j.nima.2010.04.082 article EN Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment 2010-05-01

The design of an interface to a specific sensor induces costs and time mainly related the analog part. So reduce these it should have been standardized like digital electronics. aim present work is elaboration method based on multi objectives genetic algorithms (MOGAS) allow automated synthesis mixed systems. This proposed methodology used find optimal dimensional transistor parameters (length width) in order obtain operational amplifier performances for CMOS (complementary metal oxide...

10.1109/miel.2014.6842186 article EN 2014-05-01

We present a model for the TCAD simulation of charge multiplication and trap-to-band tunneling to explain discrepancies between experimentally observed collection in highly irradiated planar pixel sensors predictions made using Hamburg model. DC transient simulations one dimensional n-in-p diodes were performed reproduce well behavior diode fluences order 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">15-16</sup> n <sub...

10.1109/nssmic.2010.5873832 article EN 2010-10-01

The OMEGAPIX2 chip embeds a matrix of channels implemented in two vertically integrated (3D) circuits and designed to read out 96×24 plannar pixels. form factor each pixel is 35×200 μm. first 3D devices's layer includes the analogue part channel processing, it will be bounded sensor by connecting inputs sensors pixels Through Silicon Vias (TSV); other performs digital memorization events manages sorting good after Level 1 (L1) trigger acquisition. In this paper, technology briefly described,...

10.1109/nssmic.2012.6551212 article EN 2012-10-01

10.1016/0168-9002(91)91025-q article EN Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment 1991-12-01
Coming Soon ...