- Topological Materials and Phenomena
- Graphene research and applications
- Quantum many-body systems
- Advanced Condensed Matter Physics
- 2D Materials and Applications
- Physics of Superconductivity and Magnetism
- Quantum, superfluid, helium dynamics
- Iron-based superconductors research
- Nuclear Materials and Properties
- Magnetic and transport properties of perovskites and related materials
- Silicon Nanostructures and Photoluminescence
- Quantum and electron transport phenomena
- Nuclear materials and radiation effects
- Diamond and Carbon-based Materials Research
- Thin-Film Transistor Technologies
- Thermal properties of materials
- Geological Studies and Exploration
- High-pressure geophysics and materials
- Rare-earth and actinide compounds
- Organic and Molecular Conductors Research
- Phase-change materials and chalcogenides
- Nuclear reactor physics and engineering
- Thermodynamic and Structural Properties of Metals and Alloys
- Silicon and Solar Cell Technologies
West Texas A&M University
2025
Idaho National Laboratory
2017-2019
University of Florida
2019
Rensselaer Polytechnic Institute
2019
University of North Texas
2015
University of Houston
2014
This study investigates the electronic structure of vanadium-based kagome metal YV6Sn6 using magnetoresistance (MR) and torque magnetometry. The MR exhibits a nearly linear, non-saturating behavior, increasing by up to 55% at 35 T but shows no evidence Shubnikov–de Haas oscillations. In contrast, signal, measured 41.5 T, reveals clear de Haas–van Alphen (dHvA) oscillations over wide frequency range, from low Fα ∼20 high frequencies between 8 10 kT. Angular temperature-dependent dHvA...
Weak antilocalization (WAL) effects in ${\mathrm{Bi}}_{2}{\mathrm{Te}}_{3}$ single crystals have been investigated at high and low bulk charge-carrier concentrations. At density the WAL curves scale with normal component of magnetic field, demonstrating dominance topological surface states magnetoconductivity. neither applied field nor its component, implying a mixture conduction. due to shows no dependence on nature (electrons or holes) charge carriers. The observations an extremely large...
We have studied the quantum oscillations in conductivity of metallic, p-type Bi$_2$Se$_{2.1}$Te$_{0.9}$. The dependence on angle magnetic field with surface as well Berry phase determined from Landau level fan plot indicate that observed arise carriers characteristic Dirac dispersion. Several quantities characterizing conduction are calculated employing Lifshitz-Kosevich theory. low value Fermi energy respect to point is consistent metallic character bulk hole carriers. conclude that, due...
This study explores the electronic and structural properties of kagome metal CsV3Sb5 under uniaxial pressures up to 20 GPa, utilizing first-principles calculations based on experimental crystallographic data provided by Tsirlin et al., SciPost Phys. 12, 049 (2022). At ambient pressure, band structure exhibits multiple Dirac points, van Hove singularities (VHSs), flat bands near Fermi level, which progressively shift closer level with increasing pressure. Remarkably, two additional Dirac-like...
We have studied the magnetotransport properties of metallic, $p$-type ${\mathrm{Sb}}_{2}{\mathrm{Te}}_{2}\mathrm{Se}$, which is a topological insulator. Magnetoresistance shows Shubnikov--de Haas oscillations in fields above $B=15$ T. The maxima and minima positions measured at different tilt angles with respect to $B$ direction align normal component field $B\mathrm{cos}\ensuremath{\theta}$, implying existence two-dimensional Fermi surface ${\mathrm{Sb}}_{2}{\mathrm{Te}}_{2}\mathrm{Se}$....
We have investigated the weak antilocalization (WAL) effect in p-type Bi$_2$Se$_{2.1}$Te$_{0.9}$ topological system. The magnetoconductance shows a cusp-like feature at low magnetic fields, indicating presence of WAL effect. curves measured different tilt angles merge together when they are plotted as function normal field components, showing that surface states dominate crystal. calculated per conduction channel and applied Hikami-Larkin-Nagaoka formula to determine physical parameters...
Shubnikov-de Haas (SdH) oscillations in metallic Bi2Se2.1Te0.9 are studied magnetic fields up to 35 Tesla. It is demonstrated that two characteristic frequencies determine the quantum of conductivity. Angle dependent measurements and calculations Berry phase show F1 F2 describe from surface bulk carriers, respectively. At low fields, only SdH oscillation topological states can be detected whereas at high field dominate. The origin separation into different ranges revealed difference...
We have investigated the grain-boundary scattering effect on thermal transport behavior of uranium dioxide (UO2). The polycrystalline samples having different grain-sizes (0.125, 1.8, and 7.2μm) been prepared by a spark plasma sintering technique characterized x-ray powder diffraction, scanning electron microscope, Raman spectroscopy. properties (the conductivity thermoelectric power) measured in temperature range 2–300 K, results were analyzed terms various physical parameters contributing...
We have studied the magnetotransport properties of a Sb$_2$Se$_2$Te single crystal. Magnetoresistance (MR) is maximum when magnetic field perpendicular to sample surface and reaches value 1100\% at $B$=31 T with no sign saturation. MR shows Shubnikov de Haas (SdH) oscillations above $B$=15 T. The frequency spectrum SdH consists three distinct peaks $\alpha$=32 T, $\beta$=80 $\gamma$=117 indicating presence Fermi pockets. Among these frequencies, $\beta$ prominent peak in measured different...
We present a systematic quantum oscillations study on metallic, p-type Bi2Te3 topological single crystal in magnetic fields up to B = 7 T. The maxima/minima positions of measured at different tilt angles align one another when plotted as function the normal component field, confirming presence 2D Fermi surface. Additionally, Berry phase, β 0.4 ± 0.05 obtained from Landau level fan plot, is very close theoretical value 0.5 for Dirac particles, surface states crystal. Using Lifshitz-Kosevich...
Received 2 June 2017DOI:https://doi.org/10.1103/PhysRevB.95.239901©2017 American Physical SocietyPhysics Subject Headings (PhySH)Research AreasMagnetoresistanceTopological materialsTopological phases of matterPhysical SystemsChalcogenidesSingle crystal materialsCondensed Matter, Materials & Applied Physics
Received 2 June 2017DOI:https://doi.org/10.1103/PhysRevB.95.239902©2017 American Physical SocietyPhysics Subject Headings (PhySH)Research AreasMagnetotransportTopological materialsTopological phases of matterCondensed Matter, Materials & Applied Physics
We have designed and developed a new experimental setup, based on the 3ω method, to measure thermal conductivity, heat capacity, electrical resistivity of variety samples in broad temperature range (2–550 K) under magnetic fields up 9 T. The validity this method is tested by measuring various types metallic (copper, platinum, constantan) insulating (SiO2) materials, which wide conductivity values (1–400 W m−1 K−1). successfully employed technique for two actinide single crystals: uranium...