A5025315885- Luminescence Properties of Advanced Materials
- Luminescence and Fluorescent Materials
- Perovskite Materials and Applications
- Solid State Laser Technologies
- ZnO doping and properties
- Ga2O3 and related materials
- Thin-Film Transistor Technologies
- Silicon Nanostructures and Photoluminescence
- Gas Sensing Nanomaterials and Sensors
- Radiation Detection and Scintillator Technologies
- Nanowire Synthesis and Applications
- Terahertz technology and applications
- Glass properties and applications
- Photorefractive and Nonlinear Optics
University of Science and Technology Liaoning
2024
Shenzhen University
2020-2023
Hanshan Normal University
2020-2023
Tiangong University
2016-2019
In this paper, a series of Rb+-doped Er3+/Yb3+–Y2O3 films were synthesized via sol-gel method and spin coating. The structure morphology the samples investigated by X-ray diffraction scanning electron microscopy. with nanoparticles, in size range 20–40 nm, obtained. spectroscopic analysis was using emission spectra intensity luminescence. All exhibited green ascribed to 2H11/2/4S3/2 4I15/2 Er3+ red one 4F9/2 its stark level Er3+. As Rb+ concentration increased, intensities light enhanced...
In this study, a series of well-crystallized Yb3+/Er3+/Tm3+-tridoped Y2O3-ZnO ceramic nano-phosphors were prepared using sol-gel synthesis, and the phosphor structures studied X-ray diffraction, scanning electron microscopy, thermogravimetric analysis. The phosphors well crystallized exhibited sharp-edged angular crystal structure mesoporous consisting 270 nm nano-particles. All generated blue, green, red emission bands attributed to Tm: 1G4→3H6, Er: 2H11/2 (4S3/2)→4I15/2, 4F9/2→4I15/2...
P-doped silicon nanocrystals with an average diameter of 2–3 nm are formed by using KrF pulsed excimer laser irradiation method. The dark conductivity as high 25.7 S cm −1 can be obtained in nc-Si films after irradiation.