A5041006497- Ga2O3 and related materials
- ZnO doping and properties
- Semiconductor materials and devices
- Electronic and Structural Properties of Oxides
- 2D Materials and Applications
- GaN-based semiconductor devices and materials
- Advanced Memory and Neural Computing
- Semiconductor Quantum Structures and Devices
- Perovskite Materials and Applications
- Plasmonic and Surface Plasmon Research
- Advanced Semiconductor Detectors and Materials
- Advanced Photocatalysis Techniques
- Nanowire Synthesis and Applications
- Electron and X-Ray Spectroscopy Techniques
- Gas Sensing Nanomaterials and Sensors
- Semiconductor materials and interfaces
- Photonic and Optical Devices
Indian Institute of Technology Delhi
2020-2024
In this article, we report on high-performance deep ultraviolet photodetectors (DUV PDs) fabricated metal-organic chemical vapor deposition (MOCVD)-grown β-Ga2O3 heteroepitaxy that exhibit stable operation up to 125 °C. The DUV PDs self-powered behavior with an ultralow dark current of 1.75 fA and a very high photo-to-dark-current ratio (PDCR) the order 105 at zero bias >105 higher biases 5 10 V, which remains almost constant responsivity 6.62 A/W is obtained V room temperature (RT) under...
β-Ga2O3 has become an ultimate choice of emerging new-generation material for its wide range compelling applications in power electronics. In this review, we have explored the available radiations atmosphere and effects radiation on devices. The focus review summarizes various studies covering different such as swift heavy ions, protons, neutrons, electrons, Gamma, X-rays to understand radiation-induced structure their reliable performance harsh environments. addition, focused pre-existing...
Temperature dependent current transport mechanism in Ni/ β -Ga 2 O 3 Schottky Barrier Diodes was studied using current-voltage (I-V) and capacitance-voltage (C-V) characterization techniques the range of 78–350 K. barrier height ϕ b0 ideality factor ɳ from I-V characteristics were found to be 1.27 eV 1.12, respectively, at room temperature. Plots with inverse temperature show strong dependency a deviation obtained C-V characteristics. The dependence assigned inhomogeneity interface,...
Hexagonal boron nitride (h-BN), a two-dimensional-layered material, exhibits the outstanding properties of ultrawide band gap, high absorption coefficient, and chemical thermal stability. Because these appealing properties, h-BN has emerged as suitable material for fabrication deep-ultraviolet (UV) photodetectors (PDs). We demonstrate plasmonic-enhanced deep-UV PDs based on nanosheets by utilizing localized surface plasmon resonance in Al nanoparticles (NPs) region. Using cost-effective...
Abstract Mixed-dimensional heterostructures are emerging to be very promising for future electronic and optoelectronic applications. Here, we report on the fabrication characterization of a 2D/3D vertical van der Waals p–n heterojunction based p-type gallium selenide (GaSe) n-type oxide ( <?CDATA ${\text{G}}{{\text{a}}_2}{{\text{O}}_3}$?> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mrow> <mml:mtext>G</mml:mtext> </mml:mrow> <mml:msub>...
The anisotropic crystal structure and layer independent electrical optical properties of ReS2 make it unique among other two-dimensional materials (2DMs), emphasizing a special need for its synthesis. This work discusses the synthesis in-depth characterization 1 × cm2 large few layered film. Vibrational modes excitonic peaks observed from Raman photoluminescence (PL) spectra corroborated formation film with 1.26 eV bandgap. High resolution transmission electron microscopy (HRTEM) images...
In situ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}$ </tex-math></inline-formula> – notation="LaTeX">${V}$ and notation="LaTeX">${C}$ measurements were performed on Pt/PtOx/ notation="LaTeX">$\beta $ -Ga2O3 vertical Schottky barrier diodes (SBD) during 120 MeV Au9+ swift heavy ion (SHI) irradiation in a fluence range of notation="LaTeX">$1\times 10^{{10}}$ notation="LaTeX">$2\times 10^{{12}}$...
Abstract Zinc telluride (ZnTe) epitaxial layers were grown on gallium arsenide (GaAs) (211) substrate at different growth temperatures by molecular beam epitaxy. The fabricated interdigitated metal semiconductor configuration-based photodetector (PD) ZnTe exhibited a stable and excellent photo response in broad spectral range (250–550 nm) up to 125 °C. room temperature higher (125 °C) values of maximum current, responsivity detectivity an applied bias 5 V 550 nm wavelength 3.5 × 10 −8 A, 0.1...
Abstract This work reports on high-performance Schottky barrier diodes (SBDs) fabricated Ga 2 O 3 epilayers using Cu as contacts (SCs). The SBDs exhibited high heights (SBHs) with values greater than 1.0 eV, near-unity ideality factors, and a rectification ratio (RR) of 10 12 at 300 K. Temperature-dependent current–voltage ( I – V T ) capacitance–voltage C measurements were performed up to 500 SBHs’ <?CDATA ${\left( {{\phi _{\text{B}}}} \right)_{IV}}$?> <mml:math...
Wide bandgap and cost-effective features place Ga<inf>2</inf>O<inf>3</inf> as a viable candidate for various power electronic devices. Au/SiO<inf>2</inf>/beta-Ga<inf>2</inf>O<inf>3</inf> metal-oxide-semiconductor devices are tested radiation response with 6 MeV <tex>$\text{Si}^{3+}$</tex> ions. The leakage current density is found to increase from <tex>$8.6\times 10^{-5} \mathrm{A}/\text{cm}^{2}$</tex> (for pristine device) <tex>$9.8\times 10^{-4}\mathrm{A}/\text{cm}^{2}$</tex> (at...
Abstract A detailed investigation of deep traps in halide vapor-phase epitaxy (HVPE)-grown β -Ga 2 O 3 epilayers has been done by performing deep-level transient spectroscopy (DLTS) from 200 K to 500 on Pt/ and Ni/ Schottky diodes. Similar results were obtained with a fill pulse width 100 ms irrespective the different metal contacts epilayers. Two electron at E2 ( E C – T = 0.65 eV) E3 0.68–0.70 effective capture cross-sections 4.10 × 10 −14 cm 5.75 −15 above 300 observed. Below K, trap...