A5101830610- Iron-based superconductors research
- Rare-earth and actinide compounds
- Inorganic Chemistry and Materials
- Crystal Structures and Properties
- Solid State Laser Technologies
- Crystallization and Solubility Studies
- Luminescence Properties of Advanced Materials
- Ga2O3 and related materials
- ZnO doping and properties
- X-ray Diffraction in Crystallography
- Photorefractive and Nonlinear Optics
- Advanced Photocatalysis Techniques
- Advanced Fiber Laser Technologies
- Advanced Thermoelectric Materials and Devices
- Innovative concrete reinforcement materials
- Radiation Detection and Scintillator Technologies
- Chalcogenide Semiconductor Thin Films
- Concrete Properties and Behavior
- Advanced Condensed Matter Physics
- Advancements in Solid Oxide Fuel Cells
- Concrete and Cement Materials Research
- Magnetic and transport properties of perovskites and related materials
- Catalytic Processes in Materials Science
- Advanced Chemical Physics Studies
- Electronic and Structural Properties of Oxides
Hubei University of Technology
2025
Shanghai Institute of Optics and Fine Mechanics
2015-2024
Chinese Academy of Sciences
2015-2024
Southeast University
2024
Guangxi University
2022-2023
Shandong University
2011-2018
State Key Laboratory of Crystal Materials
2014-2016
Zhejiang Sci-Tech University
2016
State Council of the People's Republic of China
2015
University of Cincinnati
1998-2004
The rapid development of bulk β-Ga2O3 crystals has attracted much attention to their use as ultra-wide bandgap materials for next-generation power devices owing its large (~ 4.9 eV) and breakdown electric field about 8 MV/cm. Low cost high quality single-crystal substrates can be attained by melting growth techniques widely used in the industry. In this paper, we first present an overview properties form. We then describe various methods producing applications. Finally, will a future...
A series of ternary Zintl phases, Ca2CdP2, Ca2CdAs2, Sr2CdAs2, Ba2CdAs2, and Eu2CdAs2, have been synthesized through high temperature metal flux reactions, their structures characterized by single-crystal X-ray diffraction. They belong to the Yb2CdSb2 structure type crystallize in orthorhombic space group Cmc21 (No. 36, Z = 4) with cell dimensions a 4.2066(5), 4.3163(5), 4.4459(7), 4.5922(5), 4.4418(9) Å; b 16.120(2), 16.5063(19), 16.904(3), 17.4047(18), 16.847(4) c 7.0639(9), 7.1418(8),...
Bright red emission has been obtained at room temperature from Eu-doped GaN films pumped by 325 nm HeCd laser. The luminescent were grown metalorganic chemical vapor deposition on GaN/Al2O3 substrates. Trimethylgallium (TMGa), ammonia (NH3), and europium 2,2,4,4-tetramethyl-3,5-heptanedionate used as sources for Ga, N, Eu dopant, respectively. influence of the V/III ratio during growth photoluminescence (PL) intensity studied using a fixed TMGa flow rate 92 μmol/min varying NH3 rate. film...
In this paper, the effects of oxygen vacancy and gallium on optical scintillation properties undoped β-Ga2O3 crystal 2.5 mol % Al doped oxide were investigated. For β-Ga2O3, transmittance is improved after annealing in or nitrogen atmosphere. After introduction element, absorption cutoff appears slightly blue shift, band gap increases. as-grown single crystals, decay time consists a fast component (τ1) order nanoseconds, two slow components (τ2, τ3) tens to hundreds nanoseconds. The...
Electrical properties, electronic defects, and photoluminescence (PL) of Nb-doped β-Ga2O3 crystals grown by the floating zone method have been studied in temperature range from 10 to 350 K. The activation energies shallow deep traps were obtained compared with their counterparts. 0.25-Nb-doped Ga2O3 crystal has a metallic behavior at room semiconducting low temperatures. This was interpreted quantum corrections electrical resistivity resulting weak localization Coulomb interaction. In...
A Yb3+-doped Y3Al5O12 (Yb:YAG) single-crystal plate is first grown by the edge-defined film-fed growth (EFG) method. The full width at half-maximum (fwhm) of X-ray rocking curve 36 arcsec, demonstrating high quality EFG crystal. performance Yb:YAG crystal method investigated a series thermal and spectral tests. There no Fe3+-related 250–300 nm absorption band in Laser experiments have shown that laser superior to Cz terms maximum output power, slope efficiency, corresponding...
Two new quaternary pnictide-based compounds with the noncentrosymmetric space group<italic>Iba</italic>2 (No. 45), Ba<sub>4</sub>AgGa<sub>5</sub>P<sub>8</sub>and Ba<sub>4</sub>AgGa<sub>5</sub>As<sub>8</sub>, were synthesized and characterized.
Abstract Four new quaternary chalcogenides, Ba 4 AgGaS 6 ( 1 ), AgGaSe 2 CuInS 3 and AgInS were synthesized by solid‐state reactions their structures characterized through single‐crystal X‐ray diffraction. In spite of similar chemical compositions, the flexible arrangement between transition metals triel atoms leads to subtle differences in polyanion structures. All feature [MTrQ ] 8− 1D polyanionic chains (M=Cu, Ag; Tr=Ga, In; Q=S, Se), which are constructed from corner‐sharing MQ or TrQ...
In order to study the mechanical properties of polypropylene fiber all-coral seawater concrete in triaxial compression, 36 specimens were developed and constructed for compression load testing employing confining pressure value (0, 6, 12, 18 MPa) admixture (1 kg·m−3, 2 3 kg·m−3) as variation parameters. The test observed failure mode specimen obtained stress–strain curve whole process its force damage failure. An in-depth analysis concrete’s peak stress, strain, initial elastic modulus,...
Crystal structure, Raman spectra, electrical properties, and photoluminescence of unintentionally doped (UID) W-doped β-Ga2O3 (W:β-Ga2O3) crystals grown using the optical floating zone technique were investigated. Based on experimental data, W6+ ions substitute Ga3+ mainly in octahedral lattice site, as revealed by spectroscopic assessment W:β-Ga2O3 crystals. The carrier concentration 0.10 mol. % (3.92 × 1018 cm3) is more than forty times that UID crystal (9.55 1016 cm3). In addition,...
A new quaternary arsenide Zintl phase, Ba13Si6Sn8As22, has been synthesized from the Sn-flux reactions, and structure was determined by single-crystal X-ray diffraction methods. The compound crystallizes in tetragonal non-centrosymmetric space group I42m (No. 121) with unit cell parameters of a = b 14.4857(3) Å, c 13.5506(7) V 2843.40(17) Å(3). Its polyanion can be viewed as composed [Si4As10] adamantane-like clusters SiAs4 tetrahedra, which are linked via [Sn2As4] groups built through two...
Abstract Two new europium‐containing Zintl phases, Eu 3 Si 2 As 4 and Ge , were discovered from metal flux reactions their structures identified by using single‐crystal X‐ray diffraction. Both compounds crystallize in the monoclinic space group P 1 / c are isotypic to Sr . Magnetic property studies performed results proved long‐range antiferromagnetic behavior for but with a positive Weiss constant, which suggested coexistence of both ferromagnetic order 4f electrons structure. Density...
Two new chiral Zintl compounds, Sr14Sn3As12 and Eu14Sn3As12, were synthesized from tin-flux reactions, the structures determined by using single-crystal X-ray diffraction. Both compounds crystallize in trigonal space group R3 (No. 146, Z = 3) with anion containing various units: dumbbell-shaped [Sn2As6](12-) dimers, [SnAs3](7-) triangular pyramids, isolated As(3-) anions. Very interestingly, these two exhibit opposite chirality observed crystal structures, resembling enantiomorphs. Detailed...
AgBiSe2, which exhibits complex structural phase transition behavior, has recently been considered as a potential thermoelectric material due to its intrinsically low thermal conductivity. In this work, we investigate the crystal structure of Sn-doped AgBiSe2 through powder X-ray diffraction and differential scanning calorimetry measurements. A stable cubic Ag1−x/2Bi1−x/2SnxSe2 can be obtained at room temperature when value x is larger than 0.2. addition, properties (x = 0.2, 0.25, 0.3,...
Abstract We report on the continuous-wave and passively Q-switched operation of a compositionally “mixed” heavily doped 16.6 at.% Yb:(Y,Lu) 3 Al 5 O 12 garnet crystal at cryogenic temperatures (100–200 K), pumped by volume Bragg grating stabilized diode laser emitting 969 nm. At 140 K, in regime, maximum output power 10.65 W was achieved ~ 1029 nm with slope efficiency 56% (versus incident pump power), threshold 1.05 excellent beam quality. Using Cr 4+ :YAG as saturable absorber, generated...