Xiaojuan Yuan

ORCID: 0000-0003-4304-7493
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Research Areas
  • Magnetic properties of thin films
  • Physics of Superconductivity and Magnetism
  • Quantum and electron transport phenomena
  • Magnetic and transport properties of perovskites and related materials
  • Silicon Carbide Semiconductor Technologies
  • Characterization and Applications of Magnetic Nanoparticles
  • Organic Electronics and Photovoltaics
  • Magnetic Properties and Applications
  • Semiconductor materials and devices
  • Magneto-Optical Properties and Applications
  • Chalcogenide Semiconductor Thin Films
  • Organic Light-Emitting Diodes Research
  • Conducting polymers and applications
  • Advancements in Semiconductor Devices and Circuit Design
  • Advanced Algorithms and Applications
  • Electrocatalysts for Energy Conversion
  • Electric Vehicles and Infrastructure
  • Advancements in Battery Materials
  • Advanced Queuing Theory Analysis
  • Nanoporous metals and alloys
  • Advanced NMR Techniques and Applications
  • Silicon and Solar Cell Technologies
  • Copper Interconnects and Reliability
  • MXene and MAX Phase Materials
  • Sustainable Supply Chain Management

Wuhan University
2021-2025

Guangxi University
2024

Wuhan University of Science and Technology
2020-2021

Singapore Institute of Manufacturing Technology
2011-2014

Shandong University
2011-2012

State Key Laboratory of Crystal Materials
2011-2012

Hunan University
2012

Anhui University
2004

Institute of Solid State Physics
2004

Chinese Academy of Sciences
2004

We have experimentally confirmed the large enhancement of effective efficiency in charge-spin conversion through paramagnetic–antiferromagnetic phase transition a MnRh film. Direct current-tuned spin torque-ferromagnetic resonance measurement indicates that Hall angle (θDL) film near temperature (150 K) is value 0.046. Notably, θDL 360% higher than at room temperature. Experimental results indicate attributed to fluctuation during not only improves intrinsic effect but significantly...

10.1063/5.0254025 article EN Applied Physics Letters 2025-04-14

The nondegenerate energy bands along a specific path of altermagnet enable the realization magnetic tunnel junctions (MTJs) with high magnetoresistance (TMR). Herein, we propose MTJ based on insulated altermagnet/ferromagnetic $\mathrm{MTJ}\ensuremath{-}\mathrm{Mn}{\mathrm{F}}_{2}/\mathrm{Cr}{\mathrm{O}}_{2}$. In addition to effectively simplifying device configuration, TMR is attained in $[110]$ and $[111]$ crystal directions due spin-dependent tunneling effect real space...

10.1103/physrevb.110.134437 article EN Physical review. B./Physical review. B 2024-10-23

Abstract Spin‐orbit‐torque (SOT) offers a highly attractive perspective for manipulating magnetization dynamics in magnetic nanostructures. SOT is been observed and studied various systems. However, limited by the efficiency, SOT‐induced switching of ultrahard ferromagnet still extremely difficult further improvement efficiency requested. Here, reported chemically disordered soft Fe 0.5 Pt Pt/Fe bilayers. Due to magnetization‐strengthened spin Hall effect, damping‐like torque conductivity...

10.1002/adfm.202112754 article EN Advanced Functional Materials 2022-06-25

Polaron dynamics in a system of two randomly coupled polymer chains is simulated using nonadiabatic evolution method. The simulations are performed within the framework Su-Schrieffer-Heeger model modified to include disordered interchain interactions and an external electric field. By analysing polaron velocity statistically, we find that motion determined by competition between field interactions. classified into types, weak-coupling strong-coupling dynamics. It found strength dominant...

10.1063/1.3600666 article EN The Journal of Chemical Physics 2011-06-22

Abstract Investigations of the magnetic and structural characteristics Mn 50− x Fe Rh 50 alloys are important due to their notable phase transition behavior. In this study, a series highly ordered epitaxial films with varying concentrations grown on MgO (001) substrate. At low ( = 0, 2, 6), separation between is observed. Unlike transitions, temperature-dependent magnetization exhibits fairly large temperature hysteresis. addition, induces further tetragonal distortion, resulting in an...

10.1088/1361-6463/ad8b57 article EN Journal of Physics D Applied Physics 2024-10-25

The heterostructures with high perpendicular magnetic anisotropy (PMA) have advantages for the application of nonvolatile memories long data retention time and small size. interface structure energy (MAE) Co2FeAl/MgAl2O4heterostructures were studied by first principles calculations. stable atomic arrangement is Co or FeAl layer located above equatorial oxygen coordinate in distorted octahedrons. Co-O can induce large effective PMA up to 4.54 mJ m-2, but this a metastable structure....

10.1088/1361-6528/ac218f article EN Nanotechnology 2021-08-26

The dynamic behaviors of a domain wall (DW) pinned by notch pair or single with different depths are studied. It is found that, in relatively large current density range, the oscillation frequency DW becomes frozen and independent when depth larger than 12 nm. range for freezing can be tuned depth. A chain pairs designed to introduce more DWs into nanowire. By increasing number applying proper magnetic field, amplitude greatly enhanced. Our finding suggests that nanowires series deep may...

10.1088/1361-6528/ab7676 article EN Nanotechnology 2020-02-14

In this paper, the magnetization dynamics of bilayer structured nano-pillars containing a fixed layer with perpendicular magnetic anisotropy (PMA) and free in-plane (IMA) are studied using micro-magnetic simulation method. Unlike typical sandwich-structured spin-torque nano-pillar oscillators (STNOs), proposed structure does not contain any nonmagnetic spacer layer. It is found that stable oscillation significant amplitude can be established fast after driving out vortex core by an pulse...

10.1088/1361-6528/ab91f5 article EN Nanotechnology 2020-05-11

Spin transfer torque-driven dynamic properties of spins in a bilayered nano-strip system composed layer with in-plane magnetic anisotropy (IMA) and perpendicular (PMA) were studied using micro-magnetic simulation method. It is demonstrated that domain wall (DW) can nucleate the IMA at end nano-strips propagate large speed toward other under current. With DW annihilation nucleation either nano-strips, their back forth motion induces magnetization oscillation whose amplitude frequency be...

10.1063/5.0007771 article EN Applied Physics Letters 2020-06-01

Using the first-principles band-structure method and a special quasirandom structure (SQS) approach, we have systematically calculated alloy bowing coefficients nature band offsets of SnxZn1−xTe alloys. We show that gaps these alloys are sensitively composition dependent. Due to wave functions full overlapping delocalization Sn outermost p orbits Zn s orbits, coupling between states is very strong, resulting in significant downshift conduction edge with increase concentration x, While...

10.1088/0253-6102/57/4/28 article EN Communications in Theoretical Physics 2012-04-01

Using a first-principle band-structure method and special quasirandom structure (SQS) approach, we present state-of-the-art HSE06 functional calculations for demonstrating the possibility of ternary Pb x Zn 1-x Te alloys to be bipolar-doping materials. The results show that bowing parameters band gaps these sensitively depend on composition x. Due full overlapping delocalization, coupling between outermost p orbits 4s become very strong, thus resulting in significant downshift conduction...

10.1142/s0217984911500412 article EN Modern Physics Letters B 2012-02-20

The study of the anisotropic magnetoresistance (AMR) in antiferromagnetic materials is essential due to their superior properties, which have led a broader application antiferromagnets spintronic devices. In this work, we examine impact substitutional doping on AMR $\mathrm{Fe}\mathrm{Rh}$. We discover that $\mathrm{Pt}$-$\mathrm{Rh}$ substitution can markedly enhance With 7.7% substitution, increases up fivefold compared pristine $\mathrm{Fe}\mathrm{Rh}$ films. Conversely,...

10.1103/physrevapplied.21.054045 article EN Physical Review Applied 2024-05-22

A new writing scheme with a unidirectional pulse current is proposed for spin transfer torque (STT) based magnetic random-access memory (MRAM). To investigate the feasibility of scheme, bilayered nano-pillars composed soft layer small in-plane shape anisotropy and hard either large perpendicular (PMA) or (IMA) are designed their switching behaviors studied. It found that in type nano-pillars, aid attached layer, magnetization can be switched back forth under current. In an IMA/IMA...

10.1088/1361-6528/ac2d48 article EN Nanotechnology 2021-10-07

The trench insulated gate bipolar transistor (IGBT) is the most promising structure for next generation of power semiconductor devices with wide applications ranging from motor control (1.4 kV) to HVDC (6.5 kV). Here, authors present, first time, an optimum design a 1.4 kV IGBT using new, fully integrated, optimisation system comprising process and device simulators RSM optimiser. use this new TCAD has contributed largely realizing characteristics far superior previous DMOS IGBTs. Full...

10.1049/ic:19990599 article EN 1999-01-01

This paper discusses the effectiveness of lifetime control technology in high-voltage diodes. A comprehensive study static and dynamic performance diodes using comparison with other techniques is made. We show for first time that optimum reduced region not always at anode p-n junction. The optimisation location depends on current decreasing rate di/dt device parameters such as whole n-drift region. also double irradiation most effective method among all second implantation energy key to...

10.1109/pcc.2002.998552 article EN 2003-06-25

Exploring silicon-based spin modulating junction is one of the most promising areas spintronics. Using nonequilibrium Green’s function combined with density functional theory, a set filters hydrogenated zigzag silicene nanoribbons designed by substituting silicon atom boron and spin-correlated transport properties are studied. The results show that polarization can be realized structural symmetry breaking induced doping. Remarkably, tuning edge hydrogenation, it found filter efficiency...

10.1088/1674-1056/ac0795 article EN Chinese Physics B 2021-06-03

This paper considers a remanufacturing inventory system with multiple returns, and derives the optimal policies for its replenishment. To adapt more generic industry applications, dynamic demands returns are incorporated into system. The results show that not independent among classes under certain state conditions. In addition, we also obtain transition conditions to give clear picture on how behaves dynamically.

10.1109/ieem.2014.7058865 article EN IEEE International Conference on Industrial Engineering and Engineering Management 2014-12-01

This paper discusses the relationships among optimization problem formulations which optimize forecasting accuracy indices, MAPE, MAD and RMSE, respectively. The proposes base formulation that is equivalent to all based on RMSE. findings of this ensure these different can be unified by defining problem. Through three industry cases, applications results are discussed.

10.1109/ieem.2011.6117889 article EN IEEE International Conference on Industrial Engineering and Engineering Management 2011-12-01

The spin Hall nano-oscillator (SHNO) is a promising spintronic device to produce high-frequency and low-linewidth microwave signals. We study type of SHNO based on the $L{1}_{0}\text{\ensuremath{-}}\mathrm{Fe}\mathrm{Pt}/\mathrm{Ni}\mathrm{Fe}/\mathrm{Pt}$ exchange-spring system with an ultrahigh perpendicular magnetic anisotropy by micromagnetic simulation. hard-soft has very high interlayer-exchange-interaction field, resulting in more than 30-GHz emission frequency 38.6-GHz/T field...

10.1103/physrevapplied.19.034020 article EN Physical Review Applied 2023-03-07

This paper presents an enhanced on-state performance of a 3.3 kV Trench IGBT with self-aligned p base. The base process is based on the use common nitride mask for trench etching and boron implantation diffusion which eliminates extra mask. Furthermore, structure virtually suppresses parasitic JFET effect present in high-voltage IGBTs results considerably performance. Extensive numerical simulations using MEDICI simulator have been carried out show that by adopting self aligned one can...

10.1109/ias.2001.955589 article EN Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344) 2002-11-13
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