An indium phosphide (InP)-based photonic integrated circuit (PIC) transmitter for free space optical communications was demonstrated. The consists of a sampled grating distributed Bragg reflector (SGDBR) laser, high-speed semiconductor amplifier (SOA), Mach-Zehnder modulator, and high-power output booster SOA. SGDBR laser tunes from 1521 nm to 1565 with >45 dB side mode suppression ratio. InP PIC also incorporated into link demonstrate the potential low cost, size, weight power. Error-free...

Heteroepitaxy of III–V compound semiconductors on industry standard (001) silicon (Si) substrates is highly desirable for large-scale electronic and photonic integrated circuits. Challenges this approach relate primarily to lattice, polarity, coefficient thermal expansion mismatch, which ultimately generate a high density defects limit the reliability active devices. Ongoing efforts monolithically integrate lasers in photonics include leveraging quantum dots reduced sensitivity ability...

We report the development of gallium arsenide (GaAs) films grown on V-groove patterned (001) silicon (Si) by metalorganic chemical vapor deposition. This technique can provide an advanced virtual substrate platform for photonic integrated circuits Si. A low defect density 9.1 × 106 cm−2 was achieved with aspect ratio trapping capability V-grooved Si and dislocation filtering approaches including thermal cycle annealing filter layers. The efficiencies these reduction methods are quantified...

Indium phosphide (InP) is the most developed platform for photonic integrated circuits (PICs). Of interest advancement of this applications that demand high performance, especially output power, including free space communications and microwave photonics. In paper, we summarize development InP-based PIC transmitters. Two transmitter types were fabricated: one based on an offset quantum wells (OQW) other a well intermixing (QWI) platform. The OQW-based consists widely tunable laser,...

An indium phosphide photonic integrated circuit (PIC) was demonstrated for path differential absorption lidar of atmospheric carbon dioxide (CO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ). The PIC consists two widely tunable sampled grating distributed Bragg reflector (SGDBR) lasers, directional couplers, a phase modulator, photodiode, and semiconductor optical amplifiers (SOAs). One SGDBR laser, the leader, is locked to center an...

We examine potential 100-340 GHz wireless applications in communications and imaging the prospects of developing mm-wave transistors needed to support these applications.

We report on the use of InGaAsP strain-compensated superlattices (SC-SLs) as a technique to reduce defect density Indium Phosphide (InP) grown silicon (InP-on-Si) by Metal Organic Chemical Vapor Deposition (MOCVD). Initially, 2 μm thick gallium arsenide (GaAs) layer was with very high uniformity exact oriented (001) 300 mm Si wafers; which had been patterned in 90 nm V-grooved trenches separated dioxide (SiO2) stripes and along [110] direction. Undercut at Si/SiO2 interface used propagation...

Integrating III–V gain elements in the silicon photonics platform via selective area heteroepitaxy (SAH) would enable large-scale and low-cost photonic integrated circuits. Here, we demonstrate antiphase boundary (APB)-free gallium arsenide (GaAs) microridges selectively grown on flat-bottom (001) (Si) inside a recess. This approach eliminates need for etching patterned Si to form trapezoid or v-groove shapes, often leveraged eliminating APBs. A low surface dislocation density of 8.5 × 106...

We report on the successful integration of multiple atomically thin horizontal heterojunctions (HJs) epitaxially grown via metal organic chemical vapor deposition inside a confined template dielectric material. InAs, GaAs, and InGaAs layers were included in laterally InP structures characterized to show abrupt interfaces crystalline The orientation templates substrate is chosen so that flat vertical facet appears at growth front allowing for HJs be horizontal, unlike typical planar epitaxy....

Selectively growing epitaxial material in confined dielectric structures has been explored recently as a pathway to integrate highly mismatched materials on silicon substrates. This approach involves the fabrication of channel-like structure that from growth atmosphere reaches down small exposed area substrate where subsequent via metal organic chemical vapor deposition (MOCVD) initiates. The technique, referred template assisted selective epitaxy, can also enable development novel nanoscale...

Compared to quantum well (QW) lasers, lower dimensional dot (QD) or dash (QDash) devices demonstrate superior performances, owing their quantized energy levels and increased carrier confinement. Here, we report the systematic comparison of static dynamic properties long wavelength (1550 nm) QDash QW lasers. For a higher maximum operating temperature dependence was achieved for cavities, although threshold current densities were larger than reference devices. The lasing characteristics...

Heteroepitaxy of III–V compound semiconductors on silicon (Si) or silicon-on-insulator (SOI) substrates is great interest for photonics and electronics applications. In this work, antiphase-boundary (APB)-free indium phosphide (InP) microridges have been selectively grown by metal–organic chemical vapor deposition (MOCVD) patterned (001) SOI with an extremely low fill factor 0.5%. By reduction the exposed plane micropatterned Si substrate surface using anisotropic potassium hydroxide (KOH)...

An integrated indium phosphide transmitter is demonstrated for free space optical communications. The tunes from 1521 nm to 1565 nm, demonstrates performance up 5 Gbps, and includes an output high-power semiconductor amplifier.

Indium arsenide quantum dots (QDs) are demonstrated on gallium silicon templates by metalorganic chemical vapor deposition. The template threading dislocation density is only $9.5\times 10^{6} \text{cm}^{-2}$ and the ODs of high quality. © 2019 Author(s)

Top-illuminated proof-of-concept indium gallium arsenide (InGaAs) photodiode (PD) array and high speed InGaAs PDs were realized on (001) silicon (Si) substrate by direct heteroepitaxy using metal&#x2013;organic chemical vapor deposition. The containing active layer lattice-matched to InP grown Si substrates employing InP-on-Si template with growth technique including GaAs V-grooved Si, thermal cycle annealing strained superlattice defect filters. Dry etched mesa structure polyimide...

An integrated indium phosphide transmitter with 44-nm wavelength tuning range was demonstrated and inserted in a free space optical link. Error-free operation achieved at 1 Gbps for an equivalent link length of 120 m.

In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</sub> . xmlns:xlink="http://www.w3.org/1999/xlink">53</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">47</sub> As/InAs composite channel MOS-HEMT exhibiting peak f xmlns:xlink="http://www.w3.org/1999/xlink">τ</sub> = 511 GHz and xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> 285 is demonstrated. Additionally, another device 286 460 reported. The devices have a 1 nm / 3 Al...

The selective area growth technique, confined epitaxial lateral overgrowth (CELO), enables the of III-V heterojunctions integrated on mismatched substrates. In CELO, effective control facet shapes, as well defect-free growths are essential to fabricating high-quality nanostructures with custom geometries. Here, effects temperature, V/III ratio, template alignments, and substrate orientations observed facets defect densities in CELO grown InP related materials substrates investigated....

Aeluma has developed breakthrough technology to manufacture high-performance compound semiconductor devices, such as photodetectors and lasers, on large-diameter substrates. This path scaling cost reduction could enable broad market adoption of these technologies. Aeluma's offerings include photodetectors, photodetector arrays, lasers for silicon photonics. Key the is ability deposit device structures mismatched substrates including 12-inch Silicon, subsequently devices with large-scale...

MOCVD grown aluminum-free quantum dot lasers have been demonstrated with a maximum wall-plug efficiency of 30%, lowest threshold current 8 mA, and single-facet output power 200 mW.

Subsystem operation of a photonic integrated circuit for low size, weight, and power remote gas sensing was demonstrated. Precision lidar system specifications laser tuning, photodiode bandwidth pulse extinction ratio were satisfied. A twentyfold improvement in long-term frequency stability achieved.

Integrated laser transmitters are demonstrated for free space communications. The sampled grating DBR is tunable from 1521 nm to 1565 while maintaining >45 dB side mode suppression ratio. demonstrate a 3-dB linewidth of 6.4 MHz and 7 Gbps data rate.

Indium arsenide quantum dots (QDs) are demonstrated on gallium silicon templates by metalorganic chemical vapor deposition. The template threading dislocation density is only 9.5×106 cm−2 and the QDs of high quality.

InGaAs photodiode arrays were realized on Si by heteroepitaxy, demonstrating a dark current as low 5.71 nA at -1 V and responsivity high 0.64 A/W 1550 nm room temperature.