In this article, the solar cell parameters (within one-diode model) are obtained with less than 10% error, integrating Co-Content function using up to order 6 Simpson integration method, and as a of number measured points per volt percentage noise maximum current. It is shown, that error (in some cases around 1%) can be obtained, in case larger 0.1%, higher 1, usually used trapezoidal method.

Abstract We have studied the Mg doping of cubic GaN grown by plasma-assisted Molecular Beam Epitaxy (PA-MBE) over GaAs (001) substrates. In particular, we concentrated on conditions to obtain heavy p-type achieve low resistance films which can be used in bipolar devices. simulated Mg-doped transport properties density functional theory (DFT) compare with experimental data. epitaxial layers under optimized show a free hole carrier concentration maximum value 6 × 10 19 cm −3 and mobility 3 2...

Abstract In this article Part 2 of series articles, the methodology proposed in 1, namely, fitting to a polynomial current minus short-circuit current, i.e., $$I-{I}_{sc}$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:mi>I</mml:mi> <mml:mo>-</mml:mo> <mml:msub> <mml:mi>sc</mml:mi> </mml:mrow> </mml:msub> </mml:math> , calculate Co-Content function $$\left(CC\left(V,I\right)\right)$$ <mml:mfenced> <mml:mi>C</mml:mi> <mml:mi>V</mml:mi> <mml:mo>,</mml:mo>...

Abstract In this Part 1 of series articles, the accuracy on obtention shunt resistance ( R sh ), s ideality factor n light current I lig and saturation sat via use Co-content function <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"><mml:mi>C</mml:mi><mml:mi>C</mml:mi><mml:mrow><mml:mfenced close=")" open="(" separators=""><mml:mrow><mml:mi>V</mml:mi><mml:mo>,</mml:mo><mml:mi>I</mml:mi></mml:mrow></mml:mfenced></mml:mrow><mml:mo>=</mml:mo><mml:mstyle...

A new proposal for the extraction of shunt resistance (Rsh) and saturation current (Isat) a current-voltage (I–V) measurement solar cell, within one-diode model, is given. First, Cheung method extended to obtain series (Rs), ideality factor (n) an upper limit Isat. In this article which Part 1 two parts, procedures are proposed fitting values Rsh Isat some voltage range. These used in simulated I–V curves (one darkness other one under illumination) recover known cell parameters Rsh, Rs, n,...

Abstract In this Part 2 of series articles, a discussion the literature reported obtention solar cell parameters (the shunt resistance ( R sh ), s ideality factor n light current I lig and saturation sat )), via use Co-content function <?CDATA ${CC}\left(V,I\right)=\underset{0}{\overset{V}{\int }}\left(I-{I}_{{sc}}\right){dV}$?> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mi mathvariant="italic">CC</mml:mi> <mml:mrow> <mml:mfenced close=")" open="(">...

In this Part 2 of series articles, the application iterative cycles CycleA and CycleB proposed in 1, to determine solar cell parameters (the shunt resistance (

In this Part 2 of series articles, the procedure proposed in 1, namely a new parameter extraction technique shunt resistance (R sh ) and saturation current (I sat current-voltage (I–V) measurement solar cell, within one-diode model, is applied to CdS-CdTe CIGS-CdS cells. First, Cheung method used obtain s ideality factor n. Afterwards, procedures A B 1 are R I . The compared with two other commonly procedures. Better accuracy on simulated I–V curves parameters extracted by our obtained....

The n-type CdS is commonly used as a window layer on photovoltaic solar cells, but has disadvantages such direct band gap of 2.4 eV that reduces the photons collection in UV range. As an alternative solution, ZnS (with value between 3.6 and 3.9 eV) thin film was implemented devices buffer to try solve problem. films were grown by chemical bath deposition (CBD) technique thermally treated Air, Argon, Oxygen CdCl2 atmospheres improve their optoelectronic properties. treatment formed ZnxCd1−xS...

In this Part 1 of series articles, two iterative cycles are proposed to accurately determine the shunt resistance (

Several metal contacts (Au, Ag, Pt, Pd, Cu, Ni, Ge, Ti, Cr, and Al) were tested on Metalorganic vapour phase epitaxy (MOVPE)-grown InN. Current–voltage (I–V) measurements carried out. Most of the metals showed ohmic behavior. Pt Ge yielded some Schottky contact behavior, but very unstable. Al formed a stable rectifying after thermal annealing over 500°C. temperatures times studied. The behavior is explained in terms N atoms reacting with In to form layer AlInN, which has larger band gap than

The current–voltage (I–V) measurements on Pt/InN Schottky barrier diodes in the temperature range 10–280 K were done. It was found that contact up to 280 K, becoming irreversible ohmic for higher temperatures. ideality factors calculated using Cheung method. best explained tunnelling model. A value of m*⊥ = 0.237 m0 is obtained.

Current‐Voltage (IV) measurements on Au/Ga0.51In0.49P Schottky barrier diodes in the temperature range 10–320 K were done. The Ga0.51In0.49P layer was grown by Metal Organic Vapor Phase Epitaxy (MOVPE). Cheung's method is used to estimate value of a possible series resistance RS and ideality factor n. It found that around 42 Ω at 10 decreases with 7 320 K. IV curves corrected for RS. also increasing temperature, from 45.21 1.99 well explained T0 effect. saturation current apparent height...

The Current‐Voltage (IV) measurements on Pt/InN Schottky barrier diodes in the temperature range 10–280 K were done. It was found that contact up to 280 K, becoming irreversible ohmic for higher temperatures. ideality factor, saturation current and apparent height calculated by using thermionic emission (TE) theory. factor is dependent, while are not. non conventional Richardson plot exhibits good linearity, corresponding an activation energy of 2.08 eV a constant 18.7 A m−2 K−2. Cheung's...

The temperature dependent current‐voltage (IVT) measurements on Au Schottky barrier diodes made intrinsically p‐type GaAs1−xNx were carried out. Three samples with small N content (x = 0.5%, 0.7% and 1%) studied. range was 10–320 K. All contacts found to be of type. ideality factor the apparent height calculated by using thermionic emission (TE) theory show a strong dependence. current voltage (IV) curves are fitted based TE theory, yielding zero‐bias carrier (ΦB0) (n) that decrease increase...

Abstract Silicon-based tracking detectors have been used in several important applications, such as cancer therapy using particle beams, and for the discovery of new elementary particles at Large Hadron Collider CERN. III-V semiconductor materials are an attractive alternative to silicon this application, they some superior physical properties. They could meet demands fast timing allowing time-of-flight measurements with ps resolution while being radiation tolerant cost-efficient. As a...

The effects of four thermal glues (cry-con, fixogum, RS 503-357, and silicon-high vacuum-grease from Leybold vacuum) on temperature dependent Hall measurements n-type silicon are tested. All yielded the same results (resistivity, mobility, charge carrier density) between 300 190 K. use 503-357 drastically distorts expected below K, probably due to a phase transition its latent heat, which affects sample during transition. other give reproducible down 100 Below cry-con, vacuum yield...

As-grown light emitting self-assembled Ge nanocrystals (Ge-NCs) embedded in a SiO2 matrix were produced via sequential deposition process of SiO2/Ge/SiO2 layers employing reactive radio frequency sputtering technique. Obtained Ge-NCs show crystallographic phase, the proportion, size, quality, and specific orientation which are determined by oxygen partial pressure. Photoluminescence (PL) spectra indicate that size distribution is reduced centered on about 8 nm when higher pressure employed;...

The conduction band offset between strained CdSe layers embedded in unintentionally n-type doped ZnSe is measured using deep level transient spectroscopy and reported. activation energy for electrons three monolayers thin ultra quantum wells (UTQWs) obtained, with a value of 223 ± 10 meV. This corresponds to an UTQW barrier height (the offset) 742 meV 784 These values show that the gap misfit around 70% 74% band.

The electrical properties of dome-shaped and pyramid-shaped Ge Quantum Dots (QDs) embedded in p-type Silicon are reported. Capacitance-Voltage (T-CV) characteristics reported for the temperature range 35 K to 296 K. T-CV results showed desired charge carrier density Silicon, on order 10 16 cm -3 , at room temperature. Two shoulders observed CV curves between 270 175 They explained as stored dome- QDs. Below K, only one shoulder is measurements, attributed trapped DLTS study confirms these...

We investigate self-assembled pyramid-shaped Ge Quantum Dots (QDs) with lateral dimensions of 15 nm, and heights 2.5-3 nm. These QDs were grown by Molecular Beam Epitaxy (MBE) on n-type Si(100) substrates using the Sb-mediated growth mode. The resistivity was about 5 Ωcm. Si buffer layer below capping above them doped up to 10 18 cm -3 Sb. Cross-section transmission electron microscopy shows Sb delta-doped layers. Using standard photolithographic techniques, a 0.3 mm 2 Au Schottky contact...