In‐Hwan Lee

ORCID: 0000-0003-4566-9181
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About
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Research Areas
  • GaN-based semiconductor devices and materials
  • ZnO doping and properties
  • Ga2O3 and related materials
  • Advanced Photocatalysis Techniques
  • Semiconductor materials and devices
  • Semiconductor Quantum Structures and Devices
  • Gas Sensing Nanomaterials and Sensors
  • Copper-based nanomaterials and applications
  • Quantum Dots Synthesis And Properties
  • Metal and Thin Film Mechanics
  • Nanowire Synthesis and Applications
  • Chalcogenide Semiconductor Thin Films
  • Perovskite Materials and Applications
  • Electrocatalysts for Energy Conversion
  • Photocathodes and Microchannel Plates
  • Advanced Nanomaterials in Catalysis
  • Gold and Silver Nanoparticles Synthesis and Applications
  • Semiconductor materials and interfaces
  • Thin-Film Transistor Technologies
  • Carbon and Quantum Dots Applications
  • Acoustic Wave Resonator Technologies
  • Catalytic Processes in Materials Science
  • Plasmonic and Surface Plasmon Research
  • solar cell performance optimization
  • Nanocluster Synthesis and Applications

Korea University
1998-2025

Korea Forest Service
2022-2024

Korea Institute of Science and Technology
2020-2024

Chonbuk National University Hospital
2007-2023

National University of Science and Technology
2016-2021

University of Florida
2009-2021

Institute of Forest Science
2021

Frumkin Institute of Physical Chemistry and Electrochemistry
2021

Institute for Theoretical and Experimental Physics
2021

Kurchatov Institute
2021

10.1016/j.mser.2015.05.001 article EN Materials Science and Engineering R Reports 2015-05-27

Au@Cu2O core–shell nanoparticles (NPs) were synthesized by a solution method at room temperature and applied for gas sensor applications. Transmission electron microscopy (TEM) images showed the formation of NPs, where 12–15 nm Au NPs covered with 60–30 Cu2O shell layers. The surface plasmon resonance (SPR) peak was red-shifted (520–598 nm) after formation. response higher than that bare to CO different temperatures concentrations. Similarly, NO2 low temperature. improved performance...

10.1039/c3nr04118b article EN Nanoscale 2013-10-14

SnO2 recently has attracted particular attention as a powerful buffer layer for organic optoelectronic devices due to its outstanding properties such high electron mobility, suitable band alignment, and optical transparency. Here, we report on facile low-temperature solution-processed nanoparticles (NPs) in applications cathode (CBL) of inverted solar cells (iOSCs). The conduction energy NPs estimated by ultraviolet photoelectron spectroscopy was 4.01 eV, salient feature that is necessary an...

10.1021/acsami.6b10857 article EN ACS Applied Materials & Interfaces 2016-12-17

CoO/CoP heterostructure hollow-nanoneedles with interfacially strong P–Co–O tetrahedral coupling interaction effectively improve the activity and kinetics for overall water splitting.

10.1039/d2ta08870c article EN Journal of Materials Chemistry A 2023-01-01

This work evaluates the feasibility of alkaline hydrogen evolution reaction (HER) using Pt single-atoms (1.0 wt %) on defect-rich ceria (Pt

10.1021/acs.nanolett.3c04237 article EN Nano Letters 2024-01-19

The development of high brightness, small pixel size, and self-emissive light-emitting diodes (LEDs) is deliberately accelerating to replace conventional organic/inorganic LED displays for the virtual/augmented reality market. In this study, we report fabrication process individually well-separated blue-light-emitting InGaN/GaN nanorod arrays on a large-scale wafer detach disperse them in acetone. dispersed individual LEDs are aligned horizontally onto interdigitated pattern with an...

10.1021/acsphotonics.3c01439 article EN ACS Photonics 2024-01-12

We report on etch-induced damage in n-type GaN caused by an inductively coupled plasma, and recovery means of treatment with N2 plasma. As the plasma dc bias was increased increasing rf table power during etching, optical electrical properties etched films deteriorated as result damage. However, for samples effectively removed defects surface, leading to improved surface morphology, photoluminescence, ohmic contact GaN.

10.1063/1.373438 article EN Journal of Applied Physics 2000-06-01

In this paper we provide explanations to the complex growth phenomena of GaN heteroepitaxy on nonpolar orientations using concept kinetic Wulff plots (or v-plots). Quantitative mapping in polar, semipolar, and angles are achieved a differential measurement technique from selective area growth. An accurate knowledge topography serves as an important stepping stone toward model-based control Examples illustrated correlate dynamics based with commonly observed features, including anisotropic...

10.1063/1.3009969 article EN Journal of Applied Physics 2008-11-01

Noble metal-based surface-enhanced Raman spectroscopy (SERS) has enabled the simple and efficient detection of trace-amount molecules via significant electromagnetic enhancements at hot spots. However, small cross-section various analytes forces use a reporter for specific surface functionalization, which is time-consuming limited to low-molecular-weight analytes. To tackle these issues, hybrid SERS substrate utilizing Ag as plasmonic structures GaN charge transfer enhancement centers...

10.1002/advs.202100640 article EN Advanced Science 2021-08-07

We report a systematic study accomplished with series of undoped and Si-doped GaN epilayers grown on sapphire (0001) the carrier concentration 4.0×1017−1.6×1019 cm−3 in order to investigate evolution stress relaxation yellow luminescence by Si incorporation. As doping becomes higher, bound exciton peaks are gradually shifted lower energy due thermal residual linear coefficient ΔE/Δσ∥=42 meV/GPa. The present results show that both full width at half maximum double-crystal x-ray diffractometry...

10.1063/1.119893 article EN Applied Physics Letters 1997-09-08
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