Wenli Lv

ORCID: 0000-0003-4644-4427
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About
Contact & Profiles
Research Areas
  • Organic Electronics and Photovoltaics
  • Perovskite Materials and Applications
  • Conducting polymers and applications
  • Organic Light-Emitting Diodes Research
  • Advanced Memory and Neural Computing
  • Nanowire Synthesis and Applications
  • Molecular Junctions and Nanostructures
  • Luminescence and Fluorescent Materials
  • Quantum Dots Synthesis And Properties
  • Chalcogenide Semiconductor Thin Films
  • Thin-Film Transistor Technologies
  • Ga2O3 and related materials
  • Analytical Chemistry and Sensors
  • Transition Metal Oxide Nanomaterials
  • 2D Materials and Applications
  • ZnO doping and properties
  • Fullerene Chemistry and Applications
  • Graphene research and applications
  • Semiconductor materials and devices
  • Photochromic and Fluorescence Chemistry
  • Advanced Decision-Making Techniques
  • Carbon Nanotubes in Composites
  • Thermal Radiation and Cooling Technologies
  • Advanced Sensor and Energy Harvesting Materials
  • TiO2 Photocatalysis and Solar Cells

China Jiliang University
2017-2025

Institute of Microelectronics
2014-2023

Zhengzhou University
2022

Optica
2021

Hangzhou Xixi hospital
2021

Lanzhou University
2012-2016

Zero to Three
2016

Lanzhou City University
2015-2016

Civil Aviation University of China
2014

The strong activity of water molecules causes a series parasitic side reactions on Zn anodes in the aqueous electrolytes. Herein, we introduce silk fibroin (SF) as multifunctional electrolyte additive for zinc-ion (Zn-ion) batteries. secondary structure transformation SF from α-helices to random coils electrolytes allows them break hydrogen bond network among free and participate Zn2+ ion solvation structure. released [Zn(H2O)4(SF)]2+ sheath appear be gradually adsorbed surface situ form...

10.1021/acsnano.2c05285 article EN ACS Nano 2022-07-18

Abstract Organolead halide perovskite is a newly emerging low-cost, solution-processable material with broadband absorption from the ultraviolet (UV) to visible (Vis) region, which has attracted great deal of interest in high-performance optoelectronic devices. However, some practicable applications need cover UV–Vis–NIR region for photoelectric conversion, task that remains significant challenge further extending toward near-infrared radiation (NIR) region. Here, best our knowledge, we...

10.1038/s41528-017-0005-x article EN cc-by npj Flexible Electronics 2017-09-22

Pentacene organic phototransistors (OPTs) modified by introducing C60 electrodes buffer layer were fabricated. Compared with conventional single-layer pentacene OPTs, the devices exhibited higher performance under illumination. Maximum photoresponsivity is 4.27 A/W at zero gate bias 0.2 mW cm−2, which six times than that of device and exceeds most OPTs reported recently in same conditions. The maximum photo/dark current ratio also 5 × 104. Meanwhile, could obtain lower threshold voltage...

10.1063/1.4756937 article EN Applied Physics Letters 2012-10-15

Trap‐induced current multiplication has received tremendous attention in organic photodetectors because it is not required for a pre‐amplifier circuit to read weak photocurrent signals. However, plausible correlation between energy‐distin‐guishable trap states and device performance been established guiding the design, task that remains significant challenge. Here, we propose an ingenious strategy demonstrate by engineering ultrathin fullerene (C 60 ) film as hole or barrier layer, which...

10.1002/pssr.201600046 article EN physica status solidi (RRL) - Rapid Research Letters 2016-04-15

In conventional photosensitive organic field-effect transistors (FETs) (OFETs) (photo-OFETs) based on p-type semiconductors, high work function metals such as Au are generally used source/drain electrodes, whose photosensitivity is low. We report the performance improvements of photo-OFETs palladium phthalocyanine (PdPc) by using Al source and drain electrodes. It concluded that dark currents photo-OFET PdPc with electrodes (denoted Al-PdPc device) about only one-thousandth Au-PdPc device)....

10.1109/ted.2012.2237405 article EN IEEE Transactions on Electron Devices 2013-01-14

High-performance organic broadband photomemory transistors by photogenerated minority carrier trapping and accumulation kinetics.

10.1039/c6cp00432f article EN Physical Chemistry Chemical Physics 2016-01-01

For organic films, remarkably enhanced red–NIR broad spectral absorption was achieved via the incorporation of gold nanoparticles (AuNPs) using a simple and facile preparation. The relevant thermal evaporation method has produced size-controllable AuNPs in range 0–20 nm diameter. potential use localized surface plasmon resonance (LSPR) photosensitive diodes (OPDs) as sensitive broadband sensors discussed this context. Here we showed that, by combining heterojunctions with plasmonic AuNPs,...

10.1039/c5nr03308j article EN Nanoscale 2015-01-01

Near-infrared Organic upconversion devices (NIR OUDs), which convert incident low-energy NIR photons to high-energy visible photons, have many advantages such as simple fabrication process, low cost, flexibility, large area fabrication, and inherent pixel-less imaging, play important roles in night vision security applications. In general, OUDs can be realized by integrating the organic photosensitive layer sensitizer with active layers of normal well inverted light-emitting diodes (OLEDs)...

10.1109/ted.2024.3351588 article EN IEEE Transactions on Electron Devices 2024-02-12

Photo-induced balanced ambipolar transports in lead phthalocyanine organic field-effect transistor are observed. The transport mode of the device is changed from typical p-channel to under illumination at 655 nm, 100 mW/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . physical origins this phenomenon resulted photo-induced energy barrier lowering for electrons injection source-channel interface, which suggested be downward bending...

10.1109/lpt.2013.2280813 article EN IEEE Photonics Technology Letters 2013-09-05

Abstract Broadband photodetection is central to spectroscopy, imaging, and sensing in modern science technology. However, traditional devices suffer from a higher dark current because as‐adopted photoactive semiconductors tend be accompanied by large noise output due conductivity, resulting low sensitivity detectivity. The utilization of photon manipulation as enhancing light–matter interaction on deep subwavelength scale provides fascinating opportunity achieve photocurrent while keeping...

10.1002/adom.201800996 article EN Advanced Optical Materials 2018-10-08

Weak light response of organic photodetectors has fascinating potentials in fields modern science and technology. However, their photoresponsivity is hindered by poor photocarrier excitation transport. Decorating active-layer surface with plasmonic nanometals considered a viable strategy to address this issue. Here, we demonstrate nanogold decorated phototransistor achieving remarkable enhancement photoresponsivity. Meanwhile, the photoresponsive range broadened 4 orders magnitude. The...

10.1021/acsami.8b03732 article EN ACS Applied Materials & Interfaces 2018-04-24
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