A5064413739- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Advancements in Semiconductor Devices and Circuit Design
- MXene and MAX Phase Materials
- Semiconductor Quantum Structures and Devices
With the discovery of ferroelectricity in HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> based thin films and co-integration ferroelectric field effect transistors (FeFET) into standard high-k metal gate (HKMG) CMOS platforms, FeFET has emerged from a theoretical dream to an applicable reality. This paper summarizes status GLOBALFOUNDRIES technology some its potential applications. We show excellent 0.12µm <sup...
Long data retention is a critical requirement for many of the potential applications HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based ferroelectric field-effect transistors (FeFETs). However, methods its rapid assessment are still missing. In this article, we report detailed investigation and switching properties FeFETs fabricated in 28-nm high-k metal gate technology. We identify clear correlation between two propose method...
The ferroelectric HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> based field effect transistor (FeFET) has been under research for many years and shows unique properties applications in the of emerging memories in-memory computing. This work first time demonstrates how a target programming algorithm can improve FeFET device characteristics with respect to endurance performance variability small geometries. With this technique...
In this work, we examine one of the important wear-out effects in metal-ferroelectric-insulator-semiconductor (MFIS) ferroelectric FETs (FeFET), comparing n-type and p-type endurance cycling degradation devices propose a sloshing bathtub model as physical explanation for effect. We show that: i) polarization (P <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">FE</inf> ) switching is main source demonstrated by severe V...
In this study, we provide an insight into the polarization switching behavior of HfO2-based ferroelectric field-effect transistors (FeFETs) by utilizing Landau-Ginzburg-Devonshire model in multiscale physics-based modeling platform GinestraTM. Simulation results showed that a sufficient trap density is needed for complete reversal. After that, characterize charge-trapping with dedicated experiment. The test are then compared simulation under same condition. charge trapping more sensitive to...
In this paper, recent advances on the development of Hafnium oxide (HfO2)-based ferroelectric field-effect transistors (FeFETs) are shown with respect to its memory window, trapping behavior and endurance characteristics. Although novel cell shows superior characteristics such as device scalability, CMOS compatibility, fast access time low power operation, challenges for HfO2-based FeFET lie variability endurance. To investigate failure in relation charge trapping, different delays were...