A5044149637- Force Microscopy Techniques and Applications
- Surface and Thin Film Phenomena
- Quantum and electron transport phenomena
- Semiconductor materials and devices
- Molecular Junctions and Nanostructures
- Advanced Electron Microscopy Techniques and Applications
- Nanowire Synthesis and Applications
- Electronic and Structural Properties of Oxides
- Advancements in Semiconductor Devices and Circuit Design
- Mechanical and Optical Resonators
- Graphene research and applications
- Silicon Nanostructures and Photoluminescence
- Advanced Data Storage Technologies
- Parallel Computing and Optimization Techniques
- Semiconductor materials and interfaces
- Low-power high-performance VLSI design
- Quantum-Dot Cellular Automata
- Electron and X-Ray Spectroscopy Techniques
- Advanced Materials Characterization Techniques
- Advanced Memory and Neural Computing
University of Alberta
2014-2024
National Institute for Nanotechnology
2014
Atomically precise manufacturing (APM) is a key technique that involves the direct control of atoms in order to manufacture products or components products. It has been developed most successfully using scanning probe methods and received particular attention for developing atom scale electronics with focus on silicon-based systems. This review captures development silicon atom-based divided into several sections will cover characterization manipulation surfaces tunneling microscopy atomic...
At the atomic scale, there has always been a trade-off between ease of fabrication structures and their thermal stability. Complex that are created effortlessly often disorder above cryogenic conditions. Conversely, systems with high stability do not generally permit same degree complex manipulations. Here, we report scanning tunneling microscope (STM) techniques to substantially improve automated hydrogen lithography (HL) on silicon, transform state-of-the-art repassivation into an...
We report the mechanically induced formation of a silicon–hydrogen covalent bond and its application in engineering nanoelectronic devices. show that using tip noncontact atomic force microscope (NC-AFM), single hydrogen atom could be vertically manipulated. When applying localized electronic excitation, is desorbed from hydrogen-passivated surface can transferred to apex, as evidenced unique signature frequency shift curves. In absence tunnel electrons electric field scanning probe junction...
Here we report the direct observation of single electron charging a atomic Dangling Bond (DB) on H-Si(100) 2x1 surface. The tip scanning tunneling microscope is placed adjacent to DB serve as sensitive charge-detector. Three distinct charge states dangling bond, positive, neutral, and negative, are discerned. Charge state probabilities extracted from data, analysis current traces reveals characteristic dynamics. Filling rates found decay exponentially with increasing tip-DB separation, but...
As the ultimate miniaturization of semiconductor devices approaches, it is imperative that effects single dopants be clarified. Beyond providing insight into functions and limitations conventional devices, such information enables identification new device concepts. Investigating requires sub-nanometre spatial resolution, making scanning tunnelling microscopy an ideal tool. However, dopant dynamics involve processes occurring at nanosecond timescales, posing a significant challenge to...
With nanoelectronics reaching the limit of atom-sized devices, it has become critical to examine how irregularities in local environment can affect device functionality. Here, we characterize influence charged atomic species on electrostatic potential a semiconductor surface at subnanometer scale. Using noncontact force microscopy, two-dimensional maps contact difference are used show spatially varying (100) hydrogen-terminated highly doped silicon. Three types species, one and two within...
Abstract Bare silicon dimers on hydrogen-terminated Si(100) have two dangling bonds. These are atomically localized regions of high state density near to and within the bulk band gap. We studied bare as monomeric units. Silicon dimer wires much more stable than composed individual Dimer 1 5 were intentionally fabricated characterised by STM techniques combined with functional theory provide detailed insights into geometric electronic structure. Structural dynamic qualities displayed short...
We report on tuning the carrier capture events at a single dangling bond (DB) midgap state by varying substrate temperature, doping type, and concentration. All-electronic time-resolved scanning tunneling microscopy (TR-STM) is employed to directly measure rates nanosecond time scale. A characteristic negative differential resistance (NDR) feature evident in (STM) spectroscopy (STS) measurements of DBs both n- p-type doped samples. find that common model accounts for observations....
Many new material systems are being explored to enable smaller, more capable and energy efficient devices. These bottom up approaches for atomic molecular electronics, quantum computation, data storage all rely on a well-developed understanding of materials at the scale. Here, we report versatile scanning tunneling microscope (STM) charge characterization technique, which reduces influence typically perturbative STM tip field, develop this even further. Using can now observe single molecule...
Bare silicon dimers on hydrogen-terminated Si(100) have two dangling bonds. These are atomically localized regions of high state density near to and within the bulk band gap. We studied bare as monomeric units. Silicon dimer wires much more stable than composed individual Dimer 1 5 were intentionally fabricated characterised by STM techniques combined with functional theory provide detailed insights into geometric electronic structure. Structural dynamic qualities displayed short shown be...
The miniaturization of semiconductor devices to scales where small numbers dopants can control device properties requires the development new techniques capable characterizing their dynamics. Investigating single sub-nanometer spatial resolution, which motivates use scanning tunneling microscopy (STM). However, conventional STM is limited millisecond temporal resolution. Several methods have been developed overcome this shortcoming, including all-electronic time-resolved STM, used in study...
The miniaturization of semiconductor devices to scales where small numbers dopants can control device properties requires the development new techniques capable characterizing their dynamics. Investigating single sub-nanometer spatial resolution, which motivates use scanning tunneling microscopy (STM). However, conventional STM is limited millisecond temporal resolution. Several methods have been developed overcome this shortcoming, including all-electronic time-resolved STM, used in study...
The miniaturization of semiconductor devices to the scales where small numbers dopants can control device properties requires development new techniques capable characterizing their dynamics. Investigating single sub-nanometer spatial resolution which motivates use scanning tunneling microscopy (STM), however, conventional STM is limited millisecond temporal resolution. Several methods have been developed overcome this shortcoming. Among them all-electronic time-resolved STM, used in work...