Muhammad Ibrahim Wasiq Khan

ORCID: 0000-0003-4896-2244
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About
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Research Areas
  • Terahertz technology and applications
  • Radio Frequency Integrated Circuit Design
  • Semiconductor Quantum Structures and Devices
  • Nanowire Synthesis and Applications
  • Full-Duplex Wireless Communications
  • Energy Harvesting in Wireless Networks
  • RFID technology advancements
  • Orbital Angular Momentum in Optics
  • Antenna Design and Analysis
  • Electromagnetic Compatibility and Measurements
  • Anodic Oxide Films and Nanostructures
  • Photonic and Optical Devices
  • Superconducting and THz Device Technology
  • Microwave Engineering and Waveguides
  • Metamaterials and Metasurfaces Applications
  • Semiconductor materials and interfaces
  • Chaos-based Image/Signal Encryption
  • Healthcare Technology and Patient Monitoring
  • Wireless Body Area Networks
  • Near-Field Optical Microscopy
  • Physical Unclonable Functions (PUFs) and Hardware Security
  • Wireless Power Transfer Systems
  • Cardiac pacing and defibrillation studies
  • Radar Systems and Signal Processing
  • Advancements in Semiconductor Devices and Circuit Design

Massachusetts Institute of Technology
2020-2023

IIT@MIT
2021

Korea Advanced Institute of Science and Technology
2017-2018

University of California, Riverside
2008

Silicon-based terahertz (THz) integrated circuits (ICs) have made rapid progress over the past decade. The demonstrated basic component performance, as well maturity of design tools and methodologies, it possible to build high-complexity THz systems. Such implementations are undoubtedly highly attractive due their low cost high integration capability; however, unique characteristics, both advantageous disadvantageous, also call for research investigations into unconventional systematic...

10.1109/tcsi.2021.3087604 article EN IEEE Transactions on Circuits and Systems I Regular Papers 2021-06-16

This article reports the first chip-based demonstration (at any frequency) of a transceiver front end that transmits and receives electromagnetic waves with helical distribution wavefront phase [namely, orbital angular momentum (OAM)]. The CMOS chip consists eight 0.31-THz modulator/detector units, an integrated patch antenna, which are placed in uniform circular pattern diameter one free-space wavelength. OAM modes digitally switched among <inline-formula...

10.1109/jssc.2022.3141366 article EN IEEE Journal of Solid-State Circuits 2022-01-24

The nonresonant THz response of CMOS FET has been analyzed based on static nonlinearities the transistor channel. For applied gate-to-source and drain-to-source signals, significance second-order nonlinear terms is investigated as a function dc bias conditions. A cross-coupled design for differential excitation detector also proposed, it shown, analysis well through measurements, that topology can give highest responsivity in an unbiased-drain operation, among possible topologies. minimum...

10.1109/tthz.2017.2778499 article EN IEEE Transactions on Terahertz Science and Technology 2017-12-22

This article presents a 140-GHz frequency-modulated continuous-wave (FMCW) radar transceiver featuring transmit/receive (TX/RX) antenna sharing that address TX/RX beam misalignment problem when large-aperture lenses/mirrors/reflectarrays are used for pencil forming. A full-duplexing technique based on circular polarization and geometrical symmetry is applied to mitigate the 3 dB + insertion loss inherent conventionally adopted directional couplers, while still maintaining high TX-to-RX...

10.1109/jssc.2022.3202814 article EN IEEE Journal of Solid-State Circuits 2022-09-15

Modern low-temperature large-scale systems, such as high-sensitivity IR/THz imaging arrays and quantum computers, require massive signal connections between the cooled system core external room-temperature (RT) components. An error-protected computer needs thousands or even millions of qubits operating at cryogenic temperature. Albeit rapid development highly-integrated processors [1], future scalability may still be largely limited by cables connecting peripheral control/processing units...

10.1109/isscc42615.2023.10067445 article EN 2022 IEEE International Solid- State Circuits Conference (ISSCC) 2023-02-19

Sub-THz radars in CMOS are attractive vital-sign and security-sensing applications, due to their low cost, small size, high resolution. The commonly used bistatic configuration, however, leads serious beam misalignment between TX RX, when large-aperture lenses/mirrors for longer range higher spatial precision. As shown [1], a 4mm physical separation TRX antennas at 122GHz can cause 6° misalignment, exceeding the 3dB beamwidth of 29dBi-directivity beam. Monostatic are, therefore, preferred...

10.1109/isscc42614.2022.9731637 article EN 2022 IEEE International Solid- State Circuits Conference (ISSCC) 2022-02-20

Among various ways to produce nanowires, anodic alumina membrane‐ (AAM‐) based synthesis has constantly received much attention, because AAM a uniform and parallel porous nanostructure which makes it an ideal template material for fabricating highly ordered nanostructures. In this paper, we report fabrication of InSb nanowire arrays with diameter 200 nm 30 by direct current electrodeposition inside the nanochannels membranes without subsequent annealing. The nanowires have four major growth...

10.1155/2008/698759 article EN cc-by Journal of Nanomaterials 2008-01-01

This paper presents a physically-secure wireless communication system utilizing orbital angular momentum (OAM) waves at 0.31THz. A trustworthy key distribution mechanism for symmetric cryptography is proposed by exploiting random hopping among the orthogonal OAM-wave modes and phases. Keccak-f[400] based pseudorandom number generator provides randomness to phase of additional security. We assess security vulnerabilities using OAM modulation in THz under various physical-layer threat models...

10.1109/sips55645.2022.9919249 article EN 2022-11-02

This article presents an ultra-small, high-security identification tag that is entirely built in a CMOS chip without external components. The usage of backscatter communications at 260 GHz enables full integration 2 × patch antenna array. For compactness and minimum interference caused by direct wave reflection, the signal frequency-shifted MHz radiated with cross polarization from same Such configuration also, for first time RF tags, beamsteering enhanced link budget. authentication secure...

10.1109/jssc.2020.3015717 article EN publisher-specific-oa IEEE Journal of Solid-State Circuits 2020-08-24

The boom of connected Internet Things (IoT) nodes and ubiquity wireless communications are projected to increase data traffic by several orders magnitude in the near future. While these future scalable networks support increasing numbers devices utilizing electromagnetic (EM) spectrum, ensuring security sensing is also a critical requirement. Wirelessly sensor transmit collect private sensitive data, e.g., health-related or financial information, that must be communicated securely over air.

10.1109/mssc.2020.3021842 article EN IEEE Solid-State Circuits Magazine 2020-01-01

InSb nanowires with high crystalline properties are synthesized a diameter of 200 nm via direct current electrodeposition method inside the nanochannels anodic alumina membranes. For first time, characteristics field effect transistors based on electrochemistry is presented. A single nanowire used as channel gold source and drain contacts. P ++ silicon substrate back-gate contact. Both synthesis device fabrication performed at room temperature hole mobility measured to be 57 cm 2 V -1 S...

10.1166/jno.2008.203 article EN Journal of Nanoelectronics and Optoelectronics 2008-07-01

This paper reports a CMOS energy harvester, which operates at so far the highest reported frequency (263 GHz) in order to realize wireless powering of ultra-miniaturized platforms. To maximize THz-to-DC conversion efficiency, n, low available radiation power, harvester not only utilizes high-speed 22-nm FinFET transistor but also achieves optimal operating conditions device. In specific, circuit enables self-gate biasing; and through dual-antenna topology, it drives drain gate terminals with...

10.1109/rfic54546.2022.9863171 article EN 2022-06-19

Energy-autonomous wireless tags have been adopted in authentication and supply-chain management. At present, their size cost, limited by packaging, prevent the tagging for small or inexpensive industrial/medical components. same time, pervasive electronic raises serious privacy concerns related to inadvertent malicious tracking of tagged assets. In order enable secure ubiquitous asset tagging, fully passive particle-sized cryptographic chips without external packaging are highly desired....

10.1109/isscc19947.2020.9063068 article EN 2022 IEEE International Solid- State Circuits Conference (ISSCC) 2020-02-01

Distributed, mass-deployable mm-sized nodes with communication, sensing, and actuation capabilities such as microbots [1] THz radios [2] are the key components of future collaborative large-scale networks minimum intrusion. This vision is enabled by devices miniaturization, low-cost fabrication, low power. There is, therefore, a growing interest in wake-up receivers (WuRxs) to save limited battery energy those devices. The size RF WuRx determined antenna, which fundamentally proportional...

10.1109/cicc57935.2023.10121285 article EN 2022 IEEE Custom Integrated Circuits Conference (CICC) 2023-04-01

This paper reports the effect of source/drain junction area on responsivity a metal-oxide field-effect transistor (MOSFET)-based terahertz (THz) detector. From numerical analysis based distributed-channel model for plasma-wave detection mechanism, it is predicted that both and noise-equivalent power (NEP) are improved with relatively larger source than drain area. For experimental verification, three types MOSFET detectors different areas fabricated 65-nm CMOS technology. on-wafer...

10.1109/tthz.2018.2866941 article EN IEEE Transactions on Terahertz Science and Technology 2018-08-23

This paper reports the first chip-based demonstration (at any frequency) of a CMOS front-end that generates and receives electromagnetic waves with rotating wave phase front (namely orbital angular momentum or OAM). The chip, based on uniform circularly placed patch antenna array at 0.31THz, transmits reconfigurable OAM modes, which are digitally switched among <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$m=0$</tex> (plane wave), +1...

10.1109/rfic51843.2021.9490402 article EN 2021-06-07

This article presents the first sub-terahertz (sub-THz) wake-up receiver (WuRx) for ultra-miniaturized, massively deployable platforms. A detector-first architecture, utilizing a pseudo-differential cold-FET-based CMOS THz detector, is employed to reduce power consumption. The front end employs dual-antenna-feed detector topology, independently driving gate and drain of transistor, thus achieving optimal conditions device low noise-equivalent (NEP). In addition, WuRx incorporates low-power...

10.1109/jssc.2023.3332504 article EN IEEE Journal of Solid-State Circuits 2023-11-22

In the evolving field of biomedical engineering, ingestible devices have emerged as pivotal tools for healthcare monitoring within human gastrointestinal (GI) tract. This paper addresses challenges in communication, emphasizing selection 2.4 GHz band and proposing a Bluetooth Low Energy (BLE)-compatible wake-up receiver (WuRx) operating at 2.48 that validates with in-vivo test. An LNA-first is used to counter signal loss GI tract achieves -81 dBm sensitivity. The proposed design incorporates...

10.1109/embc53108.2024.10782242 article EN 2024-07-15

The non-resonant THz response of CMOS FET has been analyzed based on static non-linearities the transistor channel. Under quasi-static limit, second order dominantly determine DC current in channel generated to signal. For applied gate-to source and drain-to-source signals, significance non-linear terms is as a function bias conditions. Based analysis, it also shown that differential detector topology can give highest responsivity cold operation. A tradeoff between resistance load impedance...

10.48550/arxiv.1612.01249 preprint EN other-oa arXiv (Cornell University) 2016-01-01

Compositionally modulated InSb nanowires (200 nm in diameter) were electrodeposited from acidic chloride baths using anodized alumina membrane as templates. The compositionally In x Sb 1-x (x ∼ 0.3, 0.5) synthesized by applying potential pulses between -0.6 V and -1.8 V. segment thickness was controlled down to tens of adjusting the deposition time. this paper, we report characteristics junctions tunneling AFM, which utilizes a conductive AFM probe detect current passing through sample while...

10.1166/jno.2009.1046 article EN Journal of Nanoelectronics and Optoelectronics 2010-05-24

InSb nanowire devices at different diameter range from 30 nm-200 nm using electrochemical deposition technique is demonstrated. Electrical properties of nanowires investigated diameters for beyond CMOS applications with high speed and low power characteristics. In particular, based FET fabricated on Si substrate presented.

10.1109/drc.2008.4800752 article EN Device Research Conference 2008-06-01
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