A5050870255- Chalcogenide Semiconductor Thin Films
- Silicon Nanostructures and Photoluminescence
- MXene and MAX Phase Materials
- Phase-change materials and chalcogenides
- 2D Materials and Applications
- Anodic Oxide Films and Nanostructures
- Advanced Photocatalysis Techniques
- Glass properties and applications
- Graphene research and applications
- Advancements in Photolithography Techniques
- Graphene and Nanomaterials Applications
- TiO2 Photocatalysis and Solar Cells
- Advancements in Semiconductor Devices and Circuit Design
- Diamond and Carbon-based Materials Research
- Recycling and Waste Management Techniques
- Supercapacitor Materials and Fabrication
- Quantum Dots Synthesis And Properties
- Crystal Structures and Properties
- Copper-based nanomaterials and applications
- Semiconductor materials and interfaces
Satbayev University
2019-2023
Institute of Physics and Technology
2016-2022
The structure of Ge2Sb2Te5 thin films doped with Bi has been studied using TEM, Raman spectroscopy, and Optical Transmission Spectroscopy. Thin were obtained by direct current (DC) ion–plasma sputtering thicknesses from 60 to 200 nm. TEM images revealed an amorphous film bismuth nanocrystallites a size ∼1 ∼20 A shift in the peaks Bi–doped compared undoped samples was observed. fundamental absorption edge long wavelength region spectrum along increase concentration detected optical...
Despite the impressive performance and incredible promise for a variety of applications, wide-scale commercialization graphene is still behind its full potential. One main challenges related to preserving graphene’s unique properties upon transfer onto practically desirable substrates. In this work, few-layer sheets deposited via liquid-phase from copper quartz substrate have been studied using suite experimental techniques, including scanning electron microscopy (SEM), Raman spectroscopy,...
Antimony has received considerable attention due to structural archetype for a variety of sulfide and sulfosalt minerals. In this work Sb thin films with thickness ~ 300 - 400 nm were grown by radio frequency magnetron sputtering, in order use as precursor synthesize chalcogenide semiconductors solar cells applications. It was shown the influence annealing temperatures structure as-deposited films. deposited on glass substrate subsequently annealed at different 300°C, 400°C, 500°C argon gas...
The use of por − Si electrodes promotes the separation water molecules inside nanopores and efficient evolution hydrogen during electrolysis. Si/c heterostructure allows solving one problems photoelectrolysis on silicon electrodes, i.e. their energetic insufficiency. Combined electrochemical physical deposition Ni surface Si, formation NiSi silicide coatings pores subsequent production photoelectrodes based NiSi/por Si/Al results in an improvement corrosion resistance to oxidation anodic...
Structure of Ge2Sb2Te5 thin films doped with Bi have been studied using Transmission Electron Microscopy, Raman scattering spectroscopy, and Optical Spectroscopy. Thin were obtained by direct current (DC) ion-plasma sputtering. High Resolution Microscopy images revealed amorphous film structure bismuth nanocrystallites a size ~1 to ~20 nm, separated from each other transition regions an structure. A shift in the peaks Bi-doped compared undoped samples was observed. decrease optical band gap...
To date, there are many ways to transfer layers of graphene the surface another substrate. In most methods, polymer films cover layers, transferred a substrate, and wash off film. other it dissolves copper substrate remains on solution.These methods have common problem - contaminated graphene. The coating is poor takes long time off. According proposed method, easily separated from foil, desired washed Of course, this method needs improvement.
Investigation of the process formation paramagnetic light-emitting particles based on material. Silicon nitride is widely used as an insulating and passivating layer due to its dielectric properties high interface barrier. The PECVD method was obtain SiNx / SiO2 Si samples, in which centers were found. A feature this deposition at low temperatures (250-300 °C), leads bonds with hydrogen. Upon further annealing, hydrogen evaporates dangling are formed. An interesting fact detection a signal...
This paper reports on the synthesis of thin films tungsten disulfide (WS 2 ) by сhemical vapour deposition (CVD) using powders sulfur and oxide obtained from metal powder. It is shown that synthesized ultra-thin 2-dimensional (2D) WS have appropriate structural optical properties suitable for their application in manufacturing electronic optoelectronic devices. Proposed method 2D few-layered can significantly accelerate rate will make it possible to control stoichiometry shapes nanocrystals...