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A5107263670
Research Areas
- Advanced Photonic Communication Systems
- Photonic and Optical Devices
- Semiconductor Lasers and Optical Devices
Germanium tin (GeSn) is a material of interest for electronic and photonic device applications, but its development commercialization have been limited by quality issues lack availability from epitaxy suppliers. In this paper, we report initial studies in optimizing GeSn films deposited on Ge buffer layer grown 200-mm diameter silicon (Si) substrates with an ASM Epsilon 2000 chemical vapor deposition reactor designed commercial production. Using single-step growth process, Sn content up to...
10.1116/6.0003798
article
EN
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
2024-09-01
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