A5101656780- High Entropy Alloys Studies
- Thin-Film Transistor Technologies
- Chalcogenide Semiconductor Thin Films
- Intermetallics and Advanced Alloy Properties
- High-Temperature Coating Behaviors
- GaN-based semiconductor devices and materials
- Advanced Semiconductor Detectors and Materials
- Photonic and Optical Devices
- Quantum Dots Synthesis And Properties
Dalian University of Technology
2023-2025
Dalian University
2023
High-entropy alloys (HEAs), due to their exceptional mechanical properties, thermal stability, and corrosion resistance, have garnered significant attention in the field of materials science. This paper reviews primary preparation methods HEAs, such as carbothermal shock, electrochemical synthesis, spark plasma sintering, analyzes characteristics these terms compositional control synthesis efficiency. Through various characterization techniques, researchers can gain an in-depth understanding...
Abstract To comply with SWaP3 specifications in infrared detectors, a novel uncooled mid-wavelength avalanche photodetector (MWIR-APD) architecture based on PbSe/Ge heterojunction was proposed. A maximum high gain of 40.8 achieved, which is comparable cooled MWIR-APDs, including HgCdTe, and Type Ⅱ superlattices (T2SLs). The theoretical simulation shows that it the significant difference permittivity between PbSe Ge results sufficient electric field contrast absorption multiplication layers,...