A5077131337- Molecular Junctions and Nanostructures
- Semiconductor materials and devices
- Quantum and electron transport phenomena
- Force Microscopy Techniques and Applications
- Advanced Electron Microscopy Techniques and Applications
- Semiconductor Quantum Structures and Devices
University College London
2022-2023
London Centre for Nanotechnology
2022-2023
Dopant impurity species can be incorporated into the silicon (001) surface via adsorption and dissociation of simple precursor molecules. Examples include phosphine (PH3), arsine (AsH3), diborane (B2H6) for incorporation phosphorus, arsenic, boron, respectively. Through exploitation chemistry, spatial locations these dopants controlled at atomic scale patterning a hydrogen lithographic resist layer using scanning tunneling microscopy (STM). There is strong interest in control bismuth atoms...
Germanium has emerged as an exceptionally promising material for spintronics and quantum information applications, with significant fundamental advantages over silicon. However, efforts to create atomic-scale devices using donor atoms qubits have largely focused on phosphorus in Positioning silicon precision requires a thermal incorporation anneal, but the low success rate this step been shown be limitation prohibiting scale-up large-scale devices. Here, we present comprehensive study of...
Abstract Germanium has emerged as an exceptionally promising material for spintronics and quantum information applications, with significant fundamental advantages over silicon. However, efforts to create atomic‐scale devices using donor atoms qubits have largely focused on phosphorus in Positioning silicon precision requires a thermal incorporation anneal, but the low success rate this step been shown be limitation prohibiting scale‐up large‐scale devices. Here, we present comprehensive...
Germanium has emerged as an exceptionally promising material for spintronics and quantum information applications, with significant fundamental advantages over silicon. However, efforts to create atomic-scale devices using donor atoms qubits have largely focussed on phosphorus in Positioning silicon precision requires a thermal incorporation anneal, but the low success rate this step been shown be limitation prohibiting scale-up large-scale devices. Here, we present comprehensive study of...