A5108426456- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces
- Silicon Nanostructures and Photoluminescence
- Advanced Semiconductor Detectors and Materials
- Powder Metallurgy Techniques and Materials
- Semiconductor materials and devices
- Metallurgy and Material Forming
- Chalcogenide Semiconductor Thin Films
- Metal Alloys Wear and Properties
- Silicon and Solar Cell Technologies
- Intermetallics and Advanced Alloy Properties
- Advanced materials and composites
- Ion-surface interactions and analysis
- Thin-Film Transistor Technologies
- Metal and Thin Film Mechanics
- Photonic and Optical Devices
- Quantum Dots Synthesis And Properties
- Electron and X-Ray Spectroscopy Techniques
- Integrated Circuits and Semiconductor Failure Analysis
- Optical Coatings and Gratings
- Microstructure and Mechanical Properties of Steels
- Rare-earth and actinide compounds
- Metallurgy and Cultural Artifacts
- Advanced Materials Characterization Techniques
- Aluminum Alloys Composites Properties
Worcestershire Royal Hospital
1981-1990
University of St Andrews
1983-1989
Electronics and Radar Development Establishment
1980-1985
University of Oxford
1983
University of Birmingham
1976-1980
University of California, Berkeley
1939
Epitaxial layers of CdxHg1−xTe (CMT) have been grown by the interdiffused multilayer process (IMP) at 350 °C. The electrical properties are fixed equilibrium conditions structure and subsequent cooling layer in a Hg ambient. Indiffusion during cooldown can be prevented growth 1000-Å-thick cap CdTe. X-ray double-crystal rocking curves for 400 reflections measured to find whether IMP introduces any residual or strain into CMT. For CMT onto CdTe/GaAs, postgrowth anneal 30 min longer reduces...
Excessive impurity additions have been widely used to suppress dislocation generation in the liquid-encapsulated Czochralski (LEC) growth of InP. We analyzed this approach by means quasi-steady-state heat transfer/thermal stress model. A strong motivation for investigation was provided recent measurement critical resolved shear σCRS InP as a function temperature range 748–948 °K several Ge and S concentrations. The experimental data were method least squares via usually accepted logarithmic...
The luminescence properties of undoped semi-insulating liquid encapsulated Czochralski-grown GaAs ingots have been characterized with ∼3-μm spatial resolution using a scanning electron microscope based, cathodoluminescence (CL) system. use cryostat operating at ∼6 K cooled PbS and Ge detectors for midgap imaging has revealed the first time depletion in 0.68-eV emission from zones ∼20 μm wide adjacent to individual polygonized dislocation arrays known as cell walls. These results correlated...
Double-crystal x-ray diffraction has been successfully used to study dimensional and compositional variations in Si1−x Gex /Si superlattices. For most samples studied an adequate agreement between theoretical experimental profiles is obtained by using a model (kinematical) which assumes uniform superlattices with abrupt interfaces. In some samples, however, the superlattice-related peaks reveal asymmetric broadening shown comparison dynamical simulations be due grading layer compositions...
The tensile, impact, and fatigue properties of a range powder-forged steels have been examined. A relationship has found between the content non-metallic inclusions performance. at 900 N/mm2 strength were compared with those En16 wrought steel same level. are demonstrably extremely variable, depending on degree hot work imparted during processing test-piece axis to principal direction working. lie highest lowest that can be expected in steel; comparisons two types material made only after...
Selected area epitaxy of CdTe onto GaAs(100)2°→(110) substrates is reported where a frequency-doubled argon ion laser, output wavelength 257 nm, used to photolytically decompose the precursors. Photodissociation precursors dimethyl telluride, ditelluride, diethyl and cadmium have been investigated for their suitability in terms ultraviolet absorption spectra thermal stability. Diethyl telluride or strong absorptions at nm good stabilities yielding high photoenhancement factors. Nucleation...