Caixu Yu

ORCID: 0009-0003-7214-824X
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About
Contact & Profiles
Research Areas
  • Electromagnetic Compatibility and Measurements
  • Electromagnetic Compatibility and Noise Suppression
  • Microwave and Dielectric Measurement Techniques
  • Integrated Circuits and Semiconductor Failure Analysis
  • Electrostatic Discharge in Electronics
  • Electrical Contact Performance and Analysis
  • Pulsed Power Technology Applications
  • Advanced Antenna and Metasurface Technologies
  • Near-Field Optical Microscopy

China Electronic Product Reliability and Environmental Test Institute
2024-2025

Anhui University of Technology
2024

In symmetric two-port probing system, the measured electromagnetic field signals can be decoupled. However, in practical application, asymmetric problem is difficult to avoid. So correcting system significant achieve ultra-wide-band near-field measurement. this paper, a virtual network matching method (VNMM) proposed based on circuit model, which different from previous correction (or calibration) method. By setting network, transformed into then As new forward method, VNMM simpler and...

10.1109/tim.2024.3353875 article EN IEEE Transactions on Instrumentation and Measurement 2024-01-01

The electromagnetic field (EM-field) probing system with a multi-port probe as high-efficiency simultaneous multi-component near-field emission measurement tool has been paid more attention. However, strict symmetry requirements of the EM-field limit its applications. In this paper, four-port asymmetric correction method is proven to be effective for an cross-loop system. This solves general problem when symmetric connects instrument through four elements. method, S-parameter and elements...

10.1109/tim.2024.3403204 article EN IEEE Transactions on Instrumentation and Measurement 2024-01-01

In this paper, the EFT immunity experimental platform of C-band RF limiter is designed, and then electromagnetic test device damage analysis are carried out.When voltage interference source exceeds 900V, experiences increased insertion loss. When continues to increase 1000V, damaged.Failure localization was out for failed sample.Failure Location Using Electromagnetic Emission Measurement Techniques.By analyzing emitted field map (EMF), it concluded that PIN diodes more susceptible damage.The...

10.56028/aetr.10.1.37.2024 article EN Advances in Engineering Technology Research 2024-03-07
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